15,151 research outputs found
Thick-Film and LTCC Passive Components for High-Temperature Electronics
At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors) made in thick-film or Low-Temperature Co-fired Ceramics (LTCC) technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors) suitable for the temperature range between 150°C and 400°C
Domain State Model for Exchange Bias
Monte Carlo simulations of a system consisting of a ferromagnetic layer
exchange coupled to a diluted antiferromagnetic layer described by a classical
spin model show a strong dependence of the exchange bias on the degree of
dilution in agreement with recent experimental observations on Co/CoO bilayers.
These simulations reveal that diluting the antiferromagnet leads to the
formation of domains in the volume of the antiferromagnet carrying a remanent
surplus magnetization which causes and controls exchange bias. To further
support this domain state model for exchange bias we study in the present paper
the dependence of the bias field on the thickness of the antiferromagnetic
layer. It is shown that the bias field strongly increases with increasing film
thickness and eventually goes over a maximum before it levels out for large
thicknesses. These findings are in full agreement with experiments.Comment: 8 pages latex, 3 postscript figure
Uniform susceptibility of classical antiferromagnets in one and two dimensions in a magnetic field
We simulated the field-dependent magnetization m(H,T) and the uniform
susceptibility \chi(H,T) of classical Heisenberg antiferromagnets in the chain
and square-lattice geometry using Monte Carlo methods. The results confirm the
singular behavior of \chi(H,T) at small T,H: \lim_{T \to 0}\lim_{H \to 0}
\chi(H,T)=1/(2J_0)(1-1/D) and \lim_{H \to 0}\lim_{T \to 0} \chi(H,T)=1/(2J_0),
where D=3 is the number of spin components, J_0=zJ, and z is the number of
nearest neighbors. A good agreement is achieved in a wide range of temperatures
T and magnetic fields H with the first-order 1/D expansion results [D. A.
Garanin, J. Stat. Phys. 83, 907 (1996)]Comment: 4 PR pages, 4 figures, submitted to PR
Future Measurements of Deeply Virtual Compton Scattering at HERMES
Prospects for future measurements of Deeply Virtual Compton Scattering at
HERMES are studied using different simple models for parameterizations of
generalized parton distributions (GPDs). Measurements of the lepton charge and
lepton beam helicity asymmetry will yield important input for theoretical
models towards the future extraction of GPDs.Comment: 12 pages, 7 figure
Modeling exchange bias microscopically
Exchange bias is a horizontal shift of the hysteresis loop observed for a
ferromagnetic layer in contact with an antiferromagnetic layer. Since exchange
bias is related to the spin structure of the antiferromagnet, for its
fundamental understanding a detailed knowledge of the physics of the
antiferromagnetic layer is inevitable. A model is investigated where domains
are formed in the volume of the AFM stabilized by dilution. These domains
become frozen during the initial cooling procedure carrying a remanent net
magnetization which causes and controls exchange bias. Varying the anisotropy
of the antiferromagnet we find a nontrivial dependence of the exchange bias on
the anisotropy of the antiferromagnet.Comment: 7 pages, 5 figure
Transversity Distribution and Polarized Fragmentation Function from Semi-inclusive Pion Electroproduction
A method is discussed to determine the hitherto unknown u-quark transversity
distribution from a planned HERMES measurement of a single-spin asymmetry in
semi-inclusive pion electroproduction off a transversely polarized target.
Assuming u-quark dominance, the measurement yields the shapes of the
transversity distribution and of the ratio of a polarized and the unpolarized
u-quark fragmentation functions. The unknown relative normalization can be
obtained by identifying the transversity distribution with the well-known
helicity distribution at large x. The systematic uncertainty of the method is
dominated by the assumption of u-quark dominance.Comment: 5 pages, 5 figures, revised version as will be published in EPJ
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