Low field magnetotransport in strained Si/SiGe cavities

Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak lineshape clearly shows deviations from the predictions of ballistic weak localization theory.Comment: Submitted to Physical Review B, 25 pages, 7 figure

Conductance quantization in etched Si/SiGe quantum point contacts

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.Comment: to appear in Physical Review

The molecularweight dependence of thermoelectric properties of poly (3-Hexylthiophene)

Organic materials have been found to be promising candidates for low-temperature thermoelectric applications. In particular, poly (3-hexylthiophene) (P3HT) has been attracting great interest due to its desirable intrinsic properties, such as excellent solution processability, chemical and thermal stability, and high field-effect mobility. However, its poor electrical conductivity has limited its application as a thermoelectric material. It is therefore important to improve the electrical conductivity of P3HT layers. In this work, we studied how molecular weight (MW) influences the thermoelectric properties of P3HT films. The films were doped with lithium bis(trifluoromethane sulfonyl) imide salt (LiTFSI) and 4-tert butylpyridine (TBP). Various P3HT layers with different MWs ranging from 21 to 94 kDa were investigated. UV-Vis spectroscopy and atomic force microscopy (AFM) analysis were performed to investigate the morphology and structure features of thin films with different MWs. The electrical conductivity initially increased when the MW increased and then decreased at the highest MW, whereas the Seebeck coefficient had a trend of reducing as the MW grew. The maximum thermoelectric power factor (1.87 μW/mK2) was obtained for MW of 77 kDa at 333 K. At this temperature, the electrical conductivity and Seebeck coefficient of this MW were 65.5 S/m and 169 μV/K, respectively

Combined use of x-ray fluorescence microscopy, phase contrast imaging for high resolution quantitative iron mapping in inflamed cells

X-ray fluorescence microscopy (XRFM) is a powerful technique to detect and localize elements in cells. To derive information useful for biology and medicine, it is essential not only to localize, but also to map quantitatively the element concentration. Here we applied quantitative XRFM to iron in phagocytic cells. Iron, a primary component of living cells, can become toxic when present in excess. In human fluids, free iron is maintained at 10-18 M concentration thanks to iron binding proteins as lactoferrin (Lf). The iron homeostasis, involving the physiological ratio of iron between tissues/secretions and blood, is strictly regulated by ferroportin, the sole protein able to export iron from cells to blood. Inflammatory processes induced by lipopolysaccharide (LPS) or bacterial pathoge inhibit ferroportin synthesis in epithelial and phagocytic cells thus hindering iron export, increasing intracellular iron and bacterial multiplication. In this respect, Lf is emerging as an important regulator of both iron and inflammatory homeostasis. Here we studied phagocytic cells inflamed by bacterial LPS and untreated or treated with milk derived bovine Lf. Quantitative mapping of iron concentration and mass fraction at high spatial resolution is obtained combining X-ray fluorescence microscopy, atomic force microscopy and synchrotron phase contrast imaging

Nickel-based structured catalysts for indirect internal reforming of methane

A structured catalyst for the dry reforming of methane (DRM) was investigated as a biogas pre-reformer for indirect internal reforming solid oxide fuel cell (IIR-SOFC). For this purpose, a NiCrAl open-cell foam was chosen as support and Ni-based samarium doped ceria (Ni-SmDC) as catalyst. Ni-SmDC powder is a highly performing catalyst showing a remarkable carbon resistance due to the presence of oxygen vacancies that promote coke gasification by CO2 activation. Ni-SmDC powder was deposited on the metallic support by wash-coating method. The metallic foam, the powder, and the structured catalyst were characterized by several techniques such as: N2 adsorption-desorption technique, X-ray diffraction (XRD), scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDX), focused ion beam (FIB), temperature programmed reduction (H2-TPR), and Raman spectroscopy. Catalytic tests were performed on structured catalysts to evaluate activity, selectivity, and stability at SOFC operating conditions

Early stage of CVD graphene synthesis on Ge(001) substrate

In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able to individuate a carbon precursor phase to graphene nucleation which coexists with small graphene domains. This precursor phase is made of C aggregates with different size, shape and local ordering which are not fully sp2 hybridized. In some atomic size regions these aggregates show a linear arrangement of atoms as well as the first signature of the hexagonal structure of graphene. The carbon precursor phase evolves in graphene domains through an ordering process, associated to a re-arrangement of the Ge surface morphology. This surface structuring represents the embryo stage of the hills-and-valleys faceting featured by the Ge(001) surface for longer deposition times, when the graphene domains coalesce to form a single layer graphene film

WC-base cemented carbides with partial and total substitution of Co as binder: Evaluation of mechanical response by means of uniaxial compression of micropillars

The influence of the chemical nature of the metallic binder on the plastic deformation of cemented carbides was studied. Three different cemented carbide grades - WC-Co, WC-CoNi and WC-NiMo - with similar microstructural characteristics (binder content and carbide grain size) were investigated. Mechanical response was evaluated by means of uniaxial compression of micropillars, and tests were carried out in-situ in a FESEM with a nanoindenter equipped with a flat-diamond punch. After uniaxial compression, inspection of deformation phenomena was done at both surface and bulk of micropillars through scanning and transmission electron microscopy, respectively. It is found that yielding phenomena and strain hardening increase as Co is totally substituted by a NiMo alloy, while contrary effect results from partial replacement of Co with Ni. Relative differences are directly linked to intrinsic ductility of the metallic phase and operative plastic deformation mechanisms. Moreover, for the three materials studied, stress-strain responses show pronounced yielding events related to glide at WC/WC interfaces. Although they are discerned at different stress levels, estimated values of sliding resistance of WC/WC boundaries are found to be alike for the three grades studied.Peer ReviewedPostprint (author's final draft

Abrupt changes in the graphene on Ge(001) system at the onset of surface melting

By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 degrees. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 degrees is fundamental to obtain high-quality graphene, while a temperature decrease of 10 degrees already results in a wrinkled and defective graphene film.Comment: in pres