Growth and applications of GeSn-related group-IV semiconductor materials

We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials

Massive hemoptysis in a post-operative patient with recurrent lung cancer successfully treated by the combination therapy of Endobronchial Watanabe Spigot and bronchial artery embolization

A 76-year-old woman who was treated with lorlatinib for postoperative recurrent anaplastic lymphoma kinase-positive lung adenocarcinoma visited our hospital with massive hemoptysis. Chest computed tomography showed massive bleeding from the right upper lobe; however, the cause of bleeding was unclear. After bronchial artery embolization (BAE), bronchial occlusion was performed using an Endobronchial Watanabe Spigot (EWS) that was easily placed because BAE had reduced the bleeding volume. Treatment with BAE alone was inadequate; however, additional therapy with EWS after BAE successfully controlled the massive hemoptysis, especially in this patient who underwent lobectomy to prevent respiratory dysfunction

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

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Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots

We have demonstrated the high–density formation of super–atom–like Si quantum dots with Ge–core on ultrathin SiO2 with control of high–selective chemical–vapor deposition and applied them to an active layer of light–emitting diodes (LEDs). Through luminescence measurements, we have reported characteristics carrier confinement and recombination properties in the Ge–core, reflecting the type II energy band discontinuity between the Si–clad and Ge–core. Additionally, under forward bias conditions over a threshold bias for LEDs, electroluminescence becomes observable at room temperature in the near–infrared region and is attributed to radiative recombination between quantized states in the Ge–core with a deep potential well for holes caused by electron/hole simultaneous injection from the gate and substrate, respectively. The results will lead to the development of Si–based light–emitting devices that are highly compatible with Si–ultra–large–scale integration processing, which has been believed to have extreme difficulty in realizing silicon photonics

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

Electrical and optical properties of GeSn layers formed at various growth conditions under changing deposition temperature (Td) and deposition speed (vd) were systematically investigated. A high Sn content of 3.0% leads to high electron mobility and electron concentration for an as-deposited sample compared with the Sn content of 1.9%. Subsequent annealing at 550 °C after the growth is effective for improving the mobility and the activated carrier concentration. Moreover, the high vd and Td growth makes it possible to get clear photoluminescence (PL) signal from the band-to-band transition of the GeSn layers. The annealing at 550 °C leads to the high and sharp PL spectra compared with those for the as-deposited samples. Consequently, we found that the high vd and Td growth of the GeSn layers suppressing the Sn migration is quite important for getting electrical and optical properties to realize future electrical and optical devices