4 research outputs found

    Biasing for high linearity base-station pre-driver

    No full text
    This thesis is a study on different methods to cancel out the nonlinearities of class A and AB power amplifiers (PA), using the proper biasing circuit design, or using analog pre distortion techniques. In this thesis, the basic fundamentals, the nonlinearity sources in power amplifiers, and different biasing circuits for PAs and their effects on nonlinearity of PAs are investigated. In addition, ordinary static and dynamic analog distorters in GaAs based PAs are reviewed. An investigation on static and dynamic analog distorters in silicon bipolar transistor based PAs are presented. Some investigation on P1dB compression point, gain distortion and phase distortion, using single tone input signal are illustrated. Adjacent Chanel Power Ratio (ACPR1) and Alternate Channel Power Ratio (ACPR2) are also simulated using modulated input signal source

    Biasing for high linearity base-station pre-driver

    No full text
    This thesis is a study on different methods to cancel out the nonlinearities of class A and AB power amplifiers (PA), using the proper biasing circuit design, or using analog pre distortion techniques. In this thesis, the basic fundamentals, the nonlinearity sources in power amplifiers, and different biasing circuits for PAs and their effects on nonlinearity of PAs are investigated. In addition, ordinary static and dynamic analog distorters in GaAs based PAs are reviewed. An investigation on static and dynamic analog distorters in silicon bipolar transistor based PAs are presented. Some investigation on P1dB compression point, gain distortion and phase distortion, using single tone input signal are illustrated. Adjacent Chanel Power Ratio (ACPR1) and Alternate Channel Power Ratio (ACPR2) are also simulated using modulated input signal source

    A high-linearity SiGe RF power amplifier for 3G and 4G small basestations

    No full text
    This article presents the design and evaluation of a linear 3.3V SiGe power amplifier for 3G and 4G femtocells with 18dBm modulated output power at 2140 MHz. Different biasing schemes to achieve high linearity with low standby current were studied. The adjacent channel power ratio linearity performance with wide-band code division multiple access (3G) and long term evolution (4G) downlink signals were compared and differences analysed and explained
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