Two-Dimensional Inversion Asymmetric Topological Insulators in Functionalized III-Bi Bilayers

The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extraordinary large bulk band gaps which are well above room-temperature, allowing for viable applications in room-temperature spintronic devices. More importantly, most of these systems display large bulk band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which are larger than any IATIs ever reported. The nontrivial topological situation in these systems is confirmed by the identified band inversion of the band structures and an explicit demonstration of the topological edge states. Interestingly, the nontrivial band order characteristics are intrinsic to most of these materials and are not subject to spin-orbit coupling. Owning to their asymmetric structures, remarkable Rashba spin splitting is produced in both the valence and conduction bands of these systems. These predictions strongly revive these new systems as excellent candidates for IATI-based novel applications.Comment: 17 pages,5figure

Electron Depletion Due to Bias of a T-Shaped Field-Effect Transistor

A T-shaped field-effect transistor, made out of a pair of two-dimensional electron gases, is modeled and studied. A simple numerical model is developed to study the electron distribution vs. applied gate voltage for different gate lengths. The model is then improved to account for depletion and the width of the two-dimensional electron gases. The results are then compared to the experimental ones and to some approximate analytical calculations and are found to be in good agreement with them.Comment: 16 pages, LaTex (RevTex), 8 fig

Investigation of metal flow in bridge die extrusion of Alloy 6063 and subsequent effect on surface quality and weld seam integrity

This paper describes a detailed study of tube extrusion by simulation using finite element method (FEM). The finite element model used one-sixth of symmetry. The extrusion load, emperature evolution and metal flow were predicted. Innovative methods, combining both grid and surface tools, were used to define in detail the flow of material. These showed clearly the inner and outer surface formation mechanisms of the tube extrusion. The seam weld, an important quality indicator, was also evaluated by selecting an appropriate criterion