Admittance investigation of MIS structures with GgTe-based single quantum wells

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe

Admittance investigation of MIS structures with GgTe-based single quantum wells

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg(1 − x)Cd(x)Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg(0.35)Cd(0.65)Te/HgTe/Hg(0.35)Cd(0.65)Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe