Prediction of Co and Ru nanocluster morphology on 2D MoS

Layered materials, such as MoS2, have a wide range of potential applications due to the properties of a single layer, which often differ from the bulk material. They are of particular interest as ultrathin diffusion barriers in semiconductor device interconnects and as supports for low-dimensional metal catalysts. Understanding the interaction between metals and the MoS2 monolayer is of great importance when selecting systems for specific applications. In previous studies the focus has been largely on the strength of the interaction between a single atom or a nanoparticle of a range of metals, which has created a significant knowledge gap in understanding thin film nucleation on 2D materials. In this paper, we present a density functional theory (DFT) study of the adsorption of small Co and Ru structures, with up to four atoms, on a monolayer of MoS2. We explore how the metal–substrate and metal–metal interactions contribute to the stability of metal clusters on MoS2, and how these interactions change in the presence of a sulfur vacancy, to develop insight to allow for a prediction of thin film morphology. The strength of interaction between the metals and MoS2 is in the order Co > Ru. The competition between metal–substrate and metal–metal interaction allows us to conclude that 2D structures should be preferred for Co on MoS2, while Ru prefers 3D structures on MoS2. However, the presence of a sulfur vacancy decreases the metal–metal interaction, indicating that with controlled surface modification 2D Ru structures could be achieved. Based on this understanding, we propose Co on MoS2 as a suitable candidate for advanced interconnects, while Ru on MoS2 is more suited to catalysis applications

DFT calculations of the structure and stability of copper clusters on MoS2

Layered materials, such as MoS2, are being intensely studied due to their interesting properties and wide variety of potential applications. These materials are also interesting as supports for low-dimensional metals for catalysis, while recent work has shown increased interest in using 2D materials in the electronics industry as a Cu diffusion barrier in semiconductor device interconnects. The interaction between different metal structures and MoS2 monolayers is therefore of significant importance and first-principles simulations can probe aspects of this interaction not easily accessible to experiment. Previous theoretical studies have focused particularly on the adsorption of a range of metallic elements, including first-row transition metals, as well as Ag and Au. However, most studies have examined single-atom adsorption or adsorbed nanoparticles of noble metals. This means there is a knowledge gap in terms of thin film nucleation on 2D materials. To begin addressing this issue, we present in this paper a first-principles density functional theory (DFT) study of the adsorption of small Cun (n = 1–4) structures on 2D MoS2 as a model system. We find on a perfect MoS2 monolayer that a single Cu atom prefers an adsorption site above the Mo atom. With increasing nanocluster size the nanocluster binds more strongly when Cu atoms adsorb atop the S atoms. Stability is driven by the number of Cu–Cu interactions and the distance between adsorption sites, with no obvious preference towards 2D or 3D structures. The introduction of a single S vacancy in the monolayer enhances the copper binding energy, although some Cun nanoclusters are actually unstable. The effect of the vacancy is localised around the vacancy site. Finally, on both the pristine and the defective MoS2 monolayer, the density-of-states analysis shows that the adsorption of Cu introduces new electronic states as a result of partial Cu oxidation, but the metallic character of Cu nanoclusters is preserved

Control of the Cu morphology on Ru-passivated and Ru-doped TaN surfaces – promoting growth of 2D conducting copper for CMOS interconnects

Prolonging the lifetime of Cu as a level 1 and level 2 interconnect metal in future nanoelectronic devices is a significant challenge as device dimensions continue to shrink and device structures become more complex. At nanoscale dimensions Cu exhibits high resistivity which prevents its functioning as a conducting wire and prefers to form non-conducting 3D islands. Given that changing from Cu to an alternative metal is challenging, we are investigating new materials that combine properties of diffusion barriers and seed liners to reduce the thickness of this layer and to promote successful electroplating of Cu to facilitate the coating of high-aspect ratio interconnect vias and to allow for optimal electrical conductance. In this study we propose new combined barrier/liner materials based on modifying the surface layer of the TaN barrier through Ru incorporation. Simulating a model Cu(29) structure at 0 K and through finite temperature ab initio molecular dynamics on these surfaces allows us to demonstrate how the Ru content can control copper wetting, adhesion and thermal stability properties. Activation energies for atom migrations onto a nucleating copper island allow insight into the growth mechanism of a Cu thin-film. Using this understanding allows us to tailor the Ru content on TaN to control the final morphology of the Cu film. These Ru-modified TaN films can be deposited by atomic layer deposition, allowing for fine control over the film thickness and composition

Electronic and optical properties of boron containing GaN alloys: The role boron atom clustering

Boron (B) containing III-nitride materials, such as wurtzite (B,Ga)N alloys, have recently attracted significant interest to tailor the electronic and optical properties of optoelectronic devices operating in the visible and ultraviolet spectral range. However, the growth of high quality samples is challenging and B atom clustering is often observed in (B,Ga)N alloys. To date, fundamental understanding of the impact of such clustering on electronic and optical properties of these alloys is sparse. In this work we employ density functional theory (DFT) in the framework of the meta generalized gradient approximation (modified Becke Johnson (mBJ) functional) to provide insight into this question. We use mBJ DFT calculations, benchmarked against state-of-the-art hybrid functional DFT, on (B,Ga)N alloys in the experimentally relevant B content range of up to 7.4%. Our results reveal that B atom clustering can lead to a strong reduction in the bandgap of such an alloy, in contrast to alloy configurations where B atoms are not forming clusters, thus not sharing nitrogen (N) atoms. We find that the reduction in bandgap is linked mainly to carrier localization effects in the valence band, which stem from local strain and polarization field effects. However, our study also reveals that the alloy microstructure of a B atom cluster plays an important role: B atom chains along the wurtzite c-axis impact the electronic structure far less strongly when compared to a chain formed within the c-plane. This effect is again linked to local polarization field effects and the orbital character of the involved valence states in wurtzite BN and GaN. Overall, our calculations show that controlling the alloy microstructure of (B,Ga)N alloys is of central importance when it comes to utilizing these systems in future optoelectronic devices with improved efficiencies

Nitride materials for use in downscaled interconnect technology

Copper interconnects will struggle to keep up with the advances in transistor miniaturisation. This creates a significant limiting factor in trying to keep Moore’s Law on track into the 2020’s. At smaller dimensions, Cu prefers to form non-conducting Cu islands. To prevent this, a liner material that promotes 2D conducting Cu needs to be deposited in the interconnect via in addition to the diffusion barrier that prevents the migration of Cu into the surrounding dielectric. However, the lowest, and smallest, levels of interconnects have extremely high aspect ratios and the bilayer of diffusion barrier and liner material takes up too much volume to allow for the deposition of a sufficient amount of Cu. A change to an alternative metal could solve some of these issues, but this brings its own challenges. Additionally, Cu is expected to remain in use at global interconnect level. For these reasons it is essential to optimise the performance of Cu interconnects and extend the use of Cu as the interconnect metal for as long as possible. One approach to this is to replace the separate diffusion barrier and liner bilayer for a single material that exhibits both properties and can be deposited in an ultra-thin layer, e.g. using atomic layer deposition. In this thesis I explore, using first principles simulations, two different approaches to developing such a combined barrier+liner material. One is to study how known liner and barrier materials could be combined through doping and passivation to create a new material that delivers both properties. Our model system is TaN (diffusion barrier) modified with Ru, Co and W. Secondly, an intrinsically ultra-thin 2D material that has both barrier and liner properties could be used to replace the barrier/liner bilayer. MoS2 has diffusion barrier properties but its liner properties have not been studied and is thus used as a model system for this approach. The literature on studying barrier and liner materials using theoretical methods is quite limited. Therefore, this thesis also presents an approach for predicting thin film morphology using density functional theory (DFT). Applying this method to Cu adsorption on TaN modified with Ru, Co and W as well as monolayers of MoS2 showed that the most important factor in controlling thin film morphology is the competition between metal-metal and metal-substrate interaction. Results show that 50% doping of TaN with Ru and 25% doping with Co or W in the surface layer can promote liner properties in TaN and thus promote the growth of 2D, conducting Cu while also preventing Cu diffusion through the material. The study of Cu as well as Ru and Co, which are of interest as alternative interconnect metals, on MoS2 showed that the metal-substrate interaction of Cu and Ru on MoS2 must be improved in order to promote a 2D film, while Co shows very strong metal-substrate interactions and should thus form a 2D film on MoS2

Structure and Stability of Cun Clusters (N = 1-4) Adsorbed on Stoichiometric and Defective 2D MoS2

Layered materials, such as MoS2, are being intensely studied due to their interesting properties and wide variety of potential applications. These materials are also interesting as supports for low dimensional metals for catalysis, while recent work has shown increased interest in using 2D materials in the electronics industry as a Cu diffusion barrier in semiconductor device interconnects. The interaction between different metal structures and MoS2 monolayers is therefore of significant importance and first principle simulations can probe aspects of this interaction not easily accessible to experiment. Previous theoretical studies have focused particularly on the adsorption of a range of metallic elements, including first row transition metals, as well as Ag and Au. However, most studies have examined single atom adsorption or adsorb nanoparticles of noble metals. This means there is a knowledge gap in terms of thin film nucleation on 2D materials. To begin addressing this issue, we present in this paper a first principles density functional theory (DFT) study of the adsorption of small Cu_n structures, where n = 1-4, on 2D MoS2 as a model system. We find on a perfect MoS2 monolayer that a single Cu atom prefers an adsorption site above the Mo atom. With increasing nanocluster size the nanocluster binds more strongly when Cu atoms adsorb atop the S atom. Stability is driven by the number of Cu-Cu interactions and the distance between adsorption sites, with no obvious preference towards 2D or 3D structures. The introduction of a single S vacancy in the monolayer enhances copper binding energy, although some Cu_n nanoclusters are actually unstable. The effect of the vacancy is localised around the vacancy site. Finally on both the pristine and defective MoS2 monolayer, the density of states analysis shows that the adsorption of Cu introduces new electronic states as a result of partial Cu oxidation, but the metallic character of Cu nanoclusters is preserved. </div

Incorporation of Tungsten or Cobalt into TaN Barrier Layers Controls Morphology of Deposited Copper

Progress in semiconductor devices, which has enabled the information and communications technology explosion of the 21st century, has been driven by Moore’s Law and the accompanying aggressive scaling of transistors. However, it is now acknowledged that the currently used copper interconnects are becoming a bottleneck in sub-nm scaling. Semiconductor devices require a diffusion barrier and a seed layer in the volume available to the interconnect metal. This then limits the minimum size of the interconnect and copper suffers from a preference to form 3D islands which are non-conducting rather than conducting films. Therefore there is a pressing need to either replace copper, which has its own difficulties, or to reduce the volume taken up by the diffusion barrier and liner; ideally finding a single material displaying both properties is needed. We have previously shown that incorporation of Ru into the surface layer of TaN is a strong alternative to the usual TaN/Ta or TaN/Ru stacks. In this work we study other possible metals that can be incorporated into TaN, namely Co and W, which are less expensive and critical than Ru and can potentially outperform it. Our first principles density functional theory (DFT) results from static relaxations and ab initio Molecular Dynamics (aiMD) show that there are several compositions of both Co- and W-doped TaN which should promote growth of 2D copper interconnects without compromising the barrier properties of TaN. With this selection of materials it should be possible to design new experimental processes that promote downscaled copper interconnects for the next generation of electronic devices. Additionally, our work presents an improved method towards prediction of thin film morphology on a given substrate, which can be of use for a variety of materials science applications

The Role of Ru Passivation and Doping on the Barrier and Seed Layer Properties of Ru-Modified TaN for Copper Interconnects

Size reduction of the barrier and liner stack for copper interconnects is a major bottleneck in further down-scaling of transistor devices. The role of the barrier is to prevent diffusion of Cu atoms into the surrounding dielectric, while the liner (also referred to as a seed layer) ensures that a smooth Cu film can be electroplated. Therefore, a combined barrier+liner material that restricts the diffusion of Cu into the dielectric and allows for copper electro-deposition is needed. In this paper, we have explored barrier+liner materials composed of 1 and 2 monolayers (MLs) of Ru-passivated epsilon-TaN and Ru doped epsilon-TaN and focus on their interactions with Cu through the adsorption of small Cu clusters with 1-4 atoms. Moreover, different doping patterns for Ru doping in TaN are investigated to understand how selective doping of the epsilon-TaN surface influences surface stability. We found that an increased concentration of Ru atoms in the outermost Ta layer improves the adhesion of Cu. The strongest binding of the Cu atoms was found on the 100% Ru doped surface followed by 1 ML Ru passivated surface. These two surfaces are recommended for the combined barrier+liner for Cu interconnects. The closely packed arrangements of Cu were found to exhibit weak Cu-slab and strong Cu-Cu interactions, whereas the sparse arrangements of Cu exhibit strong Cu-slab and weak Cu-Cu interactions. The Cu atoms seem to bind more favourably when they are buried in the doped or passivated surface layer due to the increase in their coordination number. This is facilitated by the surface distortion arising from the ionic radius mismatch between Ta and Ru. We also show that the strong Cu-Cu interaction alone cannot predict the association of Cu atoms as a few 2D Cu clusters showed stronger Cu-Cu interaction than the 3D clusters, highlighting the importance of Cu-surface interactions</div

Ru Passivated and Ru Doped e-TaN surfaces as Combined Barrier and Liner Material for Copper Interconnects: A First Principles Study

As the critical dimensions of transistors continue to be scaled down to facilitate improved performance and device speeds, new ultrathin materials that combine diffusion barrier and seed/liner properties are needed for copper interconnects at these length scales. Ideally, to facilitate coating of high aspect ratio structures, this alternative barrier+liner material should only consist of one or as few layers as possible. We studied TaN, the current industry standard for Cu diffusion barriers, and Ru, which is asuitable liner material for Cu electroplating, to explore how combining these two materials in a barrier+liner material influences the adsorption of Cu atoms in the early stage of Cu film growth. To this end, we carried out first-principles simulations of the adsorption and diffusion of Cu adatoms at Ru-passivated and Ru-doped e-TaN(1 1 0) surfaces. For comparison, we also studied the behaviour of Cu and Ru adatoms at the low index surfaces of e-TaN, as well as the interaction of Cu adatoms with the (0 0 1) surface of hexagonal Ru. Our results confirm the barrier and liner properties of TaN and Ru, respectively while also highlighting the weaknesses of both materials. Ru passivated TaN was found to have improved binding with Cu adatoms as compared to the bare TaN and Ru surfaces.On the other hand, the energetic barrier for Cu diffusion at Ru passivated TaN surface was lower than at the bare TaN surface which can promote Cu agglomeration. For Ru-doped TaN however, a decrease in Cu binding energy was found in addition to favourable migration of the Cu adatoms toward the doped Ru atom and unfavourable migration away from it or into the bulk. This suggests that Ru doping sites in the TaN surface can act as nucleation points for Cu growth with high migration barrier preventing agglomeration and allow electroplating of Cu. Therefore Ru-doped TaN is proposed as a candidate for a combined barrier+liner material with reduced thickness.</div

The role of Ru passivation and doping on the barrier and seed layer properties of Ru-modified TaN for copper interconnects

Size reduction of the barrier and liner stack for copper interconnects is a major bottleneck in further down-scaling of transistor devices. The role of the barrier is to prevent diffusion of Cu atoms into the surrounding dielectric, while the liner (also referred to as a seed layer) ensures that a smooth Cu film can be electroplated. Therefore, a combined barrier + liner material that restricts the diffusion of Cu into the dielectric and allows for copper electro-deposition is needed. In this paper, we have explored barrier + liner materials composed of 1 and 2 monolayers (MLs) of Ru-passivated ϵ-TaN and Ru doped ϵ-TaN and focused on their interactions with Cu through the adsorption of small Cu clusters with 1-4 atoms. Moreover, different doping patterns for Ru doping in TaN are investigated to understand how selective doping of the ϵ-TaN surface influences surface stability. We found that an increased concentration of Ru atoms in the outermost Ta layer improves the adhesion of Cu. The strongest binding of the Cu atoms was found on the 100% Ru doped surface followed by the 1 ML Ru passivated surface. These two surfaces are recommended for the combined barrier + liner for Cu interconnects. The closely packed arrangements of Cu were found to exhibit weak Cu-slab and strong Cu-Cu interactions, whereas the sparse arrangements of Cu exhibit strong Cu-slab and weak Cu-Cu interactions. The Cu atoms seem to bind more favorably when they are buried in the doped or passivated surface layer due to the increase in their coordination number. This is facilitated by the surface distortion arising from the ionic radius mismatch between Ta and Ru. We also show that the strong Cu-Cu interaction alone cannot predict the association of Cu atoms as a few 2D Cu clusters showed stronger Cu-Cu interaction than the 3D clusters, highlighting the importance of Cu-surface interactions.Peer reviewe