Gain Dependence of the Noise in the Single Electron Transistor

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum charge noise of qn = 9*10^-6 e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the normal state at a frequency of 4.4 kHz.Comment: 10 pages, LaTex 2.09, 4 figures (epsfig

Superconducting Electrometer Based on the Resistively Shunted Bloch Transistor

We have fabricated the Bloch transistor shunted on-chip by a small-sized Cr resistor with Rs about 1 kOhm. The Bloch transistor normally consists of two small Josephson junctions connected in series, which in our case have been replaced by two superconducting interferometer loops, each with two junctions in parallel. A capacitively coupled gate is supplied to control the induced charge of the small intermediate electrode (island) of the transistor. The measured I-V curves show no hysteresis and correspond to the operation of a effective Josephson junction at the high-damping and strong-noise limits. The critical current of the system was found to be close to its nominal value, that is in accordance with the electromagnetic environment theory. The I-V curves were modulated by the gate with a period of e and a maximum swing of about 2 /mu_V. Such rather moderate modulation results from the Josephson-to- charging energies ratio, Ej/Ec about 9, in our sample being far from its optimum value of 0.3 up to 1.Comment: To be published in IEEE Transactions on Applied Superconductivity, June 199

Probing two-field open inflation by resonant signals in correlation functions

This is the author accpted manuscript. The final version is available from IOP Publishing via the DOI in this recordWe derive oscillatory signals in correlation functions in two-field open inflation by means of the in-in formalism; such signatures are caused by resonances between oscillations in the tunnelling field and fluctuations in the inflaton during the curvature dominated, intermediate and subsequent inflationary regime. While amplitudes are model-dependent, we find distinct oscillations in the power and bi-spectrum that can act as a direct probe of the curvature dominated phase and thus, indirectly, strengthen the claim of the string landscape if they were observed. We comment on the prospects of detecting these tell-tale signs in current experiments, which is challenging, but not impossible. At the technical level, we pay special attention to the applicability conditions for truncating fluctuations to the light (inflaton) field and derive upper limits on the oscillation amplitude of the heavy field. A violation of these bounds requires a multi-field analysis at the perturbed level.© 2013 IOP Publishing Ltd and Sissa Medialab srl.Aspen Center for Physic

ON THE SECOND-LARGEST SYLOW SUBGROUP OF A FINITE SIMPLE GROUP OF LIE TYPE

DOI: 10.1017/S000497271800092

Low-cost point-focus solar concentrator, phase 1

The results of the preliminary design study for the low cost point focus solar concentrator (LCPFSC) development program are presented. A summary description of the preliminary design is given. The design philosophy used to achieve a cost effective design for mass production is described. The concentrator meets all design requirements specified and is based on practical design solutions in every possible way

The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors

The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, distinct and reproducible changes of their resistance and capacitance values were found. According to the temperature regime, we observed different behaviors as regards the resistance changes, namely the tendency to decrease the resistance by annealing at T = 200 degree C, but to increase the resistance by annealing at T = 400 degree C. We attribute this behavior to changes in the aluminum oxide barriers of the tunnel junctions. The good reproducibility of these effects with respect to the changes observed allows the proper annealing treatment to be used for post-process tuning of tunnel junction parameters. Also, the influence of the annealing treatment on the noise properties of the transistors at low frequency was investigated. In no case did the noise figures in the 1/f-regime show significant changes.Comment: 6 pages, 7 eps-figure

Ultraviolet cut off and Bosonic Dominance

We rederive the thermodynamical properties of a non interacting gas in the presence of a minimal uncertainty in length. Apart from the phase space measure which is modified due to a change of the Heisenberg uncertainty relations, the presence of an ultraviolet cut-off plays a tremendous role. The theory admits an intrinsic temperature above which the fermion contribution to energy density, pressure and entropy is negligible.Comment: 12 pages in revtex, 2 figures. Some coefficients have been changed in the A_2 model and two references adde