Space Charge Limited Transport and Time of Flight Measurements in Tetracene Single Crystals: a Comparative Study

We report on a systematic study of electronic transport in tetracene single crystals by means of space charge limited current spectroscopy and time of flight measurements. Both $I$-$V$ and time of flight measurements show that the room-temperature effective hole-mobility reaches values close to $\mu \simeq 1$ cm$^2$/Vs and show that, within a range of temperatures, the mobility increases with decreasing temperature. The experimental results further allow the characterization of different aspects of the tetracene crystals. In particular, the effects of both deep and shallow traps are clearly visible and can be used to estimate their densities and characteristic energies. The results presented in this paper show that the combination of $I$-$V$ measurements and time of flight spectroscopy is very effective in characterizing several different aspects of electronic transport through organic crystals.Comment: Accepted by J. Appl. Phys.; tentatively scheduled for publication in the January 15, 2004 issue; minor revisions compared to previous cond-mat versio

Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors

Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene thin-film transistors. Atomic force microscopy (AFM) and electrical measurements of top-contact pentacene thin-film transistors have been employed to directly correlate initial structure and final film structures, with the device mobility as a function of added impurity content. The results reveal a factor four decrease in mobility without significant changes in film morphology for source PnQ number fractions below ~0.008. For these low concentrations, the impurity thus directly influences transport, either as homogeneously distributed defects or by concentration at the otherwise-unchanged grain boundaries. For larger impurity concentrations, the continuing strong decrease in mobility is correlated with decreasing grain size, indicating an impurity-induced increase in the nucleation of grains during early stages of film growth.Comment: 18 pages, 4 Figures, 1 Tabl

Measurements of sulfur compounds in CO2 by diode laser atomic absorption spectrometry

International audienc

Impact broadening and shift rates for the 6p

The collisional broadening and shift rate coefficients of the 283.39 nm $(6p^2$ $^3{\rm P}_0 \to 7s$ $^3{\rm P}_1^o)$, 364.06 nm $(6p^2$ $^3{\rm P}_1 \to 7s$ $^3{\rm P}_1^o)$, 368.45 nm $(6p^2$ $^3{\rm P}_1 \to 7s$ $^3{\rm P}_0^o)$ and 405.90 nm $(6p^2$ $^3{\rm P}_2 \to 7s$ $^3{\rm P}_1^o)$ Pb lines by He and Ar have been measured by fitting the experimental absorption line shapes to theoretical Voigt profiles. The absorption measurements were performed in a resistively heated, Pb loaded oven with an integrated dc noble gas discharge to produce also Pb atoms in the $6p^2$ $^3{\rm P}_1$ and $6p^2$ $^3{\rm P}_2$ metastable states. The diffusion of the metastable atoms out of the discharge zone into the neutral noble-gas atmosphere enabled the line-shape and shift measurement of the lines involving the metastable states without the influence of the discharge plasma