M-H characteristics and demagnetization resistance of samarium-cobalt permanent magnets to 300 C

The influence of temperature on the M-H demagnetization characteristics of permanent magnets is important information for the full utilization of the capabilities of samarium-cobalt magnets at high temperatures in demagnetization-resistant permanent magnet devices. In high temperature space power converters, such as free-piston Stirling engine driven linear alternators, magnet demagnetization can occur as a long-term consequence of thermal agitation of domains and of metallurgical change, and also as an immediate consequence of too large an applied field. Investigated here is the short-term demagnetization resistance to applied fields derived from basic M-H data. This quasistatic demagnetization data was obtained for commercial, high-intrinsic-coercivity, Sm2Co17-type magnets from 5 sources, in the temperature range 23 to 300 C. An electromagnet driven, electronic hysteresigraph was used to test the 1-cm cubic samples. The observed variation of the 2nd quadrant M-H characteristics was a typical rapid loss of M-coercivity and a relatively lesser loss of remanence with increasing temperature. The 2nd quadrant M-H curve knee point is used to define the limits of operation safe against irreversible demagnetization due to an excessive bucking field for a given flux density swing at temperature. Such safe operating area plots are shown to differentiate the high temperature capabilities of the samples from different sources. For most of the samples, their 2nd quadrant M-H loop squareness increased with temperature, reaching a peak or a plateau above 250 C

Analog synthesized fast-variable linear load

A several kilowatt power level, fast-variable linear resistor was synthesized by using analog components to control the conductance of power MOSFETs. Risetimes observed have been as short as 500 ns with respect to the control signal and 1 to 2 microseconds with respect to the power source voltage. A variant configuration of this load that dissipates a constant power set by a control signal is indicated. Replacement of the MOSFETs by static induction transistors (SITs) to increase power handling, speed and radiation hardness is discussed

Comparative M-H Characteristics of 1-5 and 2-17 Type Samarium-Cobalt Permanent Magnets to 300 C

Recent consideration of the use of permanent magnets in space power converters at heat rejection temperatures exceeding 250 C and in miniature high temperature actuators is supporting a search for permanent magnets resistant to demagnetizing forces at high temperature. The present paper investigates the short-term demagnetization resistance to applied bucking fields and at temperatures up to 300 C of SmCo5 type magnets, in the form of 1-cm cubes, from several commercial sources. Quasistatic, 2nd quadrant M-H data taken at selected temperatures are the source of derived plots which are then compared to similar data for previously tested Sm2Co17 type magnets. The 1-5 magnet remanence tends to be about 1.5 kG below that of the 2-17 magnets throughout the temperature range. However, the intrinsic coercivities and M-H curve 'knee-fields' seen in particular 1-5 magnets were considerably above those seen previously in the 2-17 magnets. This superior resistance to demagnetizing fields attainable in 1-5 magnets is also illustrated by safe operating area plots based on the knee-field, the magnetic induction swing and temperature. Comments are made on the possibility that a remanence versus knee-field tradeoff can make 1-5 material competitive with 2-17 in applications where a magnet has to withstand large bucking fields at high temperature

Passively forced current sharing among transistors

This application concerns a simple passive circuit that improves current balance in paralleled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive. A nonlinear circuit consisting of diodes and resistors generates a differential gate potential required to correct for unbalance while maintaining low losses over a range of current

A Current Source Method For t(sub q) Measurement of Fast Switching Thyristors

A current source driven circuit has been constructed to measure the turn-off time (t(sub q)) of fast-switching SiC thyristors. This circuit operates from a single power supply and a dual channel pulse generator to provide adjustment of forward current, magnitude and duration of reverse applied voltage, and rate of rise of reapplied forward voltage. Values of t(sub q) down to 100 ns can be resolved

Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out

Makeup and uses of a basic magnet laboratory for characterizing high-temperature permanent magnets

A set of instrumentation for making basic magnetic measurements was assembled in order to characterize high intrinsic coercivity, rare earth permanent magnets with respect to short term demagnetization resistance and long term aging at temperatures up to 300 C. The major specialized components of this set consist of a 13 T peak field, capacitor discharge pulse magnetizer; a 10 in. pole size, variable gap electromagnet; a temperature controlled oven equipped with iron cobalt pole piece extensions and a removable paddle that carries the magnetization and field sensing coils; associated electronic integrators; and sensor standards for field intensity H and magnetic moment M calibration. A 1 cm cubic magnet sample, carried by the paddle, fits snugly between the pole piece extensions within the electrically heated aluminum oven, where fields up to 3.2 T can be applied by the electromagnet at temperatures up to 300 C. A sample set of demagnetization data for the high energy Sm2Co17 type of magnet is given for temperatures up to 300 C. These data are reduced to the temperature dependence of the M-H knee field and of the field for a given magnetic induction swing, and they are interpreted to show the limits of safe operation

Paralleling power MOSFETs in their active region: Extended range of passively forced current sharing

A simple passive circuit that improves current balance in parallelled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive are exhibited. A nonlinear circuit consisting of diodes and resistors generates the differential gate potential required to correct for unbalance while maintaining low losses over a range of current. Also application of a thin tape wound magnetic core to effect dynamic current balance is reviewed, and a simple theory is presented showing that for operation in the active region the branch currents tend to revert to their normal unbalanced values even if the core is not driven into saturation. Results of several comparative experiments are given

External Magnetic Field Reduction Techniques for the Advanced Stirling Radioisotope Generator

Linear alternators coupled to high efficiency Stirling engines are strong candidates for thermal-to-electric power conversion in space. However, the magnetic field emissions, both AC and DC, of these permanent magnet excited alternators can interfere with sensitive instrumentation onboard a spacecraft. Effective methods to mitigate the AC and DC electromagnetic interference (EMI) from solenoidal type linear alternators (like that used in the Advanced Stirling Convertor) have been developed for potential use in the Advanced Stirling Radioisotope Generator. The methods developed avoid the complexity and extra mass inherent in data extraction from multiple sensors or the use of shielding. This paper discusses these methods, and also provides experimental data obtained during breadboard testing of both AC and DC external magnetic field devices

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed