Homogeneity along Cl-compensated thm grown CdTe ingot

Different characterization techniques (TSC, time of flight, nuclear detection) have been used for assessment of Cl-compensated THM grown crystals, in which the chlorine was introduced in various manners. It is observed that the net carrier concentration increases from the beginning to the end of the ingots. Suggestion is made that this may result from background impurities segregation

Homogeneity along Cl-compensated thm grown CdTe ingot

Different characterization techniques (TSC, time of flight, nuclear detection) have been used for assessment of Cl-compensated THM grown crystals, in which the chlorine was introduced in various manners. It is observed that the net carrier concentration increases from the beginning to the end of the ingots. Suggestion is made that this may result from background impurities segregation.On a utilisé différentes techniques expérimentales (courant thermostimulé, temps de vol des porteurs, détection nucléaire) en vue de caractériser des cristaux de tellurure de cadmium préparés par la méthode THM et compensés de différentes manières par le chlore. On constate que la concentration nette d'impuretés croît du début vers l'extrêmité du lingot. On suggère que ceci résulte de la ségrégation d'impuretés résiduelles