498 research outputs found

    Empowerment and ownership in effective internationalisation of the higher education curriculum

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    Internationalising the curriculum (IOC) in order to produce graduates with global citizenship skills is a common strategic goal in modern higher education. The extent to which this is achieved and the level of understanding amongst staff and students of what IOC involves and the benefits it imparts are varied. In this study, activities and attitudes across 15 subject disciplines delivered in a modern UK university were surveyed through an analysis of official course documentation, and semi-structured interviews with a range of academic staff. The outcomes are discussed in relation to the level of understanding and ownership that staff have of IOC. Through the modification of a process control model Barnett (European Journal of Education, 29(2), 165–179, 1994), suggestions are made as to how to move this top-down strategic imperative forward through empowerment of the academic staff involved in course delivery

    Double marking revisited

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    In 2002, the Qualifications and Curriculum Authority (QCA) published the report of an independent panel of experts into maintaining standards at Advanced Level (A-Level). One of its recommendations was for: ‘limited experimental double marking of scripts in subjects such as English to determine whether the strategy would signi-ficantly reduce errors of measurement’ (p. 24). This recommendation provided the impetus for this paper which reviews the all but forgotten literature on double marking and considers its relevance now

    Elemental boron doping behavior in silicon molecular beam epitaxy

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    Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures

    The Hodge--Poincar\'e polynomial of the moduli spaces of stable vector bundles over an algebraic curve

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    Let X be a nonsingular complex projective variety that is acted on by a reductive group GG and such that Xss≠X(0)s≠∅X^{ss} \neq X_{(0)}^{s}\neq \emptyset. We give formulae for the Hodge--Poincar\'e series of the quotient X(0)s/GX_{(0)}^s/G. We use these computations to obtain the corresponding formulae for the Hodge--Poincar\'e polynomial of the moduli space of properly stable vector bundles when the rank and the degree are not coprime. We compute explicitly the case in which the rank equals 2 and the degree is even.Comment: Final published version. arXiv admin note: text overlap with arXiv:math/0305346, arXiv:math/0305347 by other author
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