Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass

A 20-band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to examine the ON-current variations to size variations of [110] oriented PMOS nanowire devices. Infinitely long, uniform, rectangular nanowires of side dimensions from 3nm to 12nm are examined and significantly different behavior in width vs. height variations are identified and explained. Design regions are identified, which show minor ON-current variations to significant width variations that might occur due to lack of line width control. Regions which show large ON-current variations to small height variations are also identified. The considerations of the full band model here show that ON-current doubling can be observed in the ON-state at the onset of volume inversion to surface inversion transport caused by structural side size variations. Strain engineering can smooth out or tune such sensitivities to size variations. The cause of variations described is the structural quantization behavior of the nanowires, which provide an additional variation mechanism to any other ON-current variations such as surface roughness, phonon scattering etc.Comment: 24 pages, 5 figure

On the interplay between electrical conductivity and Seebeck coefficient in ultra-narrow silicon nanowires

We analyze the effect of low dimensionality on the electrical conductivity ({\sigma}) and Seebeck coefficient (S) in ultra-narrow Si nanowires (NWs) by employing atomistic considerations for the electronic structures and linearized Boltzmann transport theory. We show that changes in the geometrical features of the NWs such as diameter and orientation, mostly affect {\sigma} and S in two ways: i) the distance of the band edges from the Fermi level ({\eta}F) changes, and ii) quantum confinement in some cases strongly affect the effective mass of the subbands, which influences the conductivity of the NWs and {\eta}F. Changes in eta_F cause exponential changes in {\sigma}, but linear changes in S. S seems to be only weakly dependent on the curvature of the bands, the strength of the scattering mechanisms, and the shape of the DOS(E) function, contrary to current view. Our results indicate that low dimensionality has a stronger influence on {\sigma} than on S due to the stronger sensitivity of {\sigma} on {\eta}F. We identify cases where bandstructure engineering through confinement can improve {\sigma} without significantly affecting S, which can result in power factor improvements.Comment: 19 pages, 5 figure

Financial Ratios, Size, Industry and Interest Rate Issues in Company Failure: An Extended Multidimensional Scaling Analysis

Three-way multidimensional scaling methods are used to study the differences between UK failed and continuing companies from 1993 to 2001. The technique allows for visual representations of the results, so that qualitative information can be brought to bear when judging the health of a company. It is shown that it is important to take into account company size and area of activity. Results also suggest that the ratio structure of the companies varies between years in response to changes in the interest rates, suggesting that the frontier between failing and continuing firms moves in response to the economic cycle

Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon conduction, large improvements on the thermoelectric figure of merit, ZT, have been recently reported in nanostructures, compared to the raw materials' ZT values. In addition, low dimensionality can improve a device's power factor, offering an additional enhancement in ZT. In this work the atomistic sp3d5s*-spin-orbit-coupled tight-binding model is used to calculate the electronic structure of silicon nanowires (NWs). The Landauer formalism is applied to calculate an upper limit for the electrical conductivity, the Seebeck coefficient, and the power factor. We examine n-type and p-type nanowires of diameters from 3nm to 12nm, in [100], [110], and [111] transport orientations at different doping concentrations. Using experimental values for the lattice thermal conductivity in nanowires, an upper limit for ZT is computed. We find that at room temperature, scaling the diameter below 7nm can at most double the power factor and enhance ZT. In some cases, however, scaling does not enhance the performance at all. Orientations, geometries, and subband engineering techniques for optimized designs are discussed.Comment: 19 pages, 4 figure

Bandstructure and mobility variations in p-type Silicon nanowires under electrostatic gate field

The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation of Si nanowires (NWs), self consistently coupled to a 2D Poisson equation, solved in the cross section of the NW. Upon convergence, the linearized Boltzmann transport theory is employed for the mobility calculation, including carrier scattering by phonons and surface roughness. As the channel is driven into inversion, for [111] and [110] NW devices of diameters D>10nm the curvature of the bandstructure increases and the hole effective mass becomes lighter, resulting in a approx. 50% mobility increase. Such improvement is large enough to compensate for the detrimental effect of surface roughness scattering. The effect is very similar to the bandstructure variations and mobility improvement observed under geometric confinement, however, in this case confinement is caused by electrostatic gating. We provide explanations for this behavior based on features of the heavy-hole band. This effect could be exploited in the design of p-type NW devices. We note, finally, that the 'apparent' mobility of low dimensional short channel transistors is always lower than the intrinsic channel diffusive mobility due to the detrimental influence of the so called 'ballistic' mobility.Comment: 25 pages, 8 figures Solid-State Electronics, 201

Band alignment and scattering considerations for enhancing the thermoelectric power factor of complex materials: The case of Co-based half-Heuslers

Half-Heuslers, an emerging thermoelectric material group, has complex bandstructures with multiple bands that can be aligned through band engineering approaches, giving us an opportunity to improve their power factor. In this work, going beyond the constant relaxation time approximation, we perform an investigation of the benefits of band alignment in improving the thermoelectric power factor under different density of states dependent scattering scenarios. As a test case we consider the Co-based p-type half-Heuslers TiCoSb, NbCoSn and ZrCoSb. First, using simplified effective mass models combined with Boltzmann transport, we investigate the conditions of band alignment that are beneficial to the thermoelectric power factor under three different carrier scattering scenarios: i) the usual constant relaxation time approximation, ii) intra-band scattering restricted to the current valley with the scattering rates proportional to the density of states as dictated by Fermi's Golden Rule, and iii) both intra- and inter-band scattering across all available valleys, with the rates determined by the total density of states at the relevant energies. We demonstrate that the band-alignment outcome differs significantly depending on the scattering details. Next, using the density functional theory calculated bandstructures of the half-Heuslers we study their power factor behavior under strain induced band alignment. We show that strain can improve the power factor of half-Heuslers, but the outcome heavily depends on the curvatures of the bands involved, the specifics of the carrier scattering mechanisms, and the initial band separation. Importantly, we also demonstrate that band alignment is not always beneficial to the power factor.Comment: 18 pages, 15 figure

Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation. Linearized Boltzmann transport theory is applied, including carrier scattering by phonons, surface roughness (SRS), and impurities. We present a comprehensive investigation of the low-field mobility in silicon NWs considering: i) n- and p-type NWs, ii) [100], [110], and [111] transport orientations, and iii) diameters from D=12nm (electronically almost bulk-like) down to D=3nm (ultra-scaled). The simulation results display strong variations in the characteristics of the different NW types. For n-type NWs, phonon scattering and SRS become stronger as the diameter is reduced and drastically degrade the mobility by up to an order of magnitude depending on the orientation. For the [111] and [110] p-type NWs, on the other hand, large mobility enhancements (of the order of ~4X) can be achieved as the diameter scales down to D=3nm. This enhancement originates from the increase in the subband curvatures as the diameter is scaled. It overcompensates for the mobility reduction caused by SRS in narrow NWs and offers an advantage with diameter scaling. Our results may provide understanding of recent experimental measurements, as well as guidance in the design of NW channel devices with improved transport properties.Comment: 45 pages, 8 figure

Young people’s experiences using electric powered indoor-outdoor wheelchairs (EPIOCs): Potential for enhancing users’ development?

Purpose: To examine the experiences of severely physically disabled young people using electric powered indoor/outdoor chairs (EPIOCs). Methods: A priori interview questions examined young people’s functioning with EPIOCs, pain and discomfort with EPIOC use and accidents or injuries resulting from EPIOC use. Eighteen young people (13 males and 5 females) aged 10 -18 (mean 15) years were interviewed by telephone using a qualitative framework approach. Participants were interviewed 10 -19 (mean 14.5) months after delivery of the chair. Diagnoses included muscular dystrophy (n = 10), cerebral palsy (n = 5), and ‘other’ (n =3). Results: Many children reported positive functioning following EPIOC use, including increased independence and social activities like wheelchair football. However, EPIOC use was also associated with pain and discomfort, as well as perceived lack of safety, and minor accidents. Most young people and their families were fairly satisfied with the service and provision of their wheelchairs. Conclusions: The findings suggest that disabled children’s development may benefit from the use of electric powered indoor/outdoor wheelchairs, although the advantages may come at certain costs to young people’s perceived and real safety. Recommendations to powered wheelchair providers include the demonstrated need for additional driving training as these young people mature