11 research outputs found

    INDUSTRIAL OPPORTUNITIES OF CONTROLLED MELT FLOW DURING GLASS MELTING PART 2: POTENTIAL APPLICATIONS

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    A review of the recent results and applications of controlled melt flow in the glass melting spaces [1] leads to the idea of helical flow as the most efficient way of melt flow through the continuous glass melting space. The results of mathematical modelling provide conditions under which the character of the melt flow can be set up and quantity space utilization is used for the quantitative evaluation. We designed a melting device (module) without a batch blanket and with a controlled melt flow that performs both homogenization processes in parallel, substantially increases the melting performance and reduces the total energy consumption. We also delivered an overview of non-traditional melting techniques and discussed possibilities for implementing the module in real technology. The concept of the implementation of the controlled melt flow into spaces with a batch blanket and the preliminary results of the mathematical modelling are presented as well

    ROLE OF GLASS MELT FLOW IN CONTAINER FURNACE EXAMINED BY MATHEMATICAL MODELLING

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    The character of the glass melt flow in a regenerative container furnace was simulated by mathematical modeling under conditions of various energy distributions in the melting space with the application of electric boosting. The aim was the achievement of high melting performance and the decrease of heat losses. The results of the modeling have confirmed that the melting performance generally increased and heat losses decreased with the growth of the total amount of energy added to the batch region of the furnace. The amount of energy delivered to the furnace batch region moved between 30-60% of the total supplied energy; the melting performance then corresponded with 230-460 tons/day, and the specific heat losses were between 1450-2100 kJ/kg of glass. The energetic model of melt flows is presented providing the diagram of various flow characters

    Laser Desorption Ionization Time-of-Flight Mass Spectrometry of Glasses and Amorphous Films from Ge-As-Se System

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    International audienceLaser Desorption Ionization Time-of-Flight Mass Spectrometry was exploited for the characterization of Ge-As-Se chalcogenide glasses and corresponding thin films fabricated using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters' stoichiometry. The clusters observed were As-b(+) (b = 1-3), Se-2(-), binary AsbSe+ (b = 1-3), AsbSec- (b = 1-3, c = 1-4), Ge2Sec- (c = 2-3), As3Se2+, Ge2Asb- (b = 2-3), Ge3Asb- (b = 1-2), Ge3Se4-, As5Sec- (c = 4-5), GeAsSe4-, GeaAsSe5- (a = 1-4), GeAs2Se3-, GeAs3Se2-, Ge2As2Se2-, Ge2AsSec- (c = 6-7), and GeAs3Sec- (c = 5-6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films

    Laser Desorption Ionisation Time-​of-​Flight Mass Spectrometry of Chalcogenide Glasses from (GeSe2)​100-​x(Sb2Se3)​x System

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    International audienceLaser Desorption Ionization Time-​of-​Flight Mass Spectrometry (LDI TOFMS) was used to characterize chalcogenide glasses from pseudobinary (GeSe2)​100-​x(Sb2Se3)​x system, where x = 5-​60, aiming description of their partial structure through the anal. of the plasma formed due to interaction of pulsed laser beam with studied glasses. The plasma contains pos. or neg. charged clusters; their stoichiometry was detd. as Sec-​ (c = 2-​3)​, Sb+, Se2+, and Sb3+; binary GeSec+, SbSec+​/-​ (c = 1-​2)​, SbbSec+ (b = 2-​3, c = 1-​4)​, GeaSb3+ (a = 1-​4)​, Sb2Sec-​ (c = 3-​4)​, SbSe3-​, and Sb3Se5+; ternary GeSbSe2+, GeSbSec-​ (c = 3-​5)​, GeSbbSe+ (b = 4-​5)​, and Ge9Sb2Sec+ (c = 5-​7) ones. Described method is generally useful not only for partial structural characterization of chalcogenide glasses and corresponding thin films but also for evaluation of their contamination with oxygen and​/or hydrogen

    Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition

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    International audiencePulsed UV laser deposition was exploited for the preparation of thin Sn As Se ( = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn As Se materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn Se clusters with low and values were observed

    Mass spectrometric investigation of amorphous Ga-Sb-Se thin films

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    International audienceAmorphous chalcogenide thin films are widely studied due to their enhanced properties and extensive applications. Here, we have studied amorphous Ga-Sb-Se chalcogenide thin films prepared by magnetron co-sputtering, via laser ablation quadrupole ion trap time-of-flight mass spectrometry. Furthermore, the stoichiometry of the generated clusters was determined which gives information about individual species present in the plasma plume originating from the interaction of amorphous chalcogenides with high energy laser pulses. Seven different compositions of thin films (Ga content 7.6–31.7 at. %, Sb content 5.2–31.2 at. %, Se content 61.2–63.3 at. %) were studied and in each case about ~50 different clusters were identified in positive and ~20–30 clusters in negative ion mode. Assuming that polymers can influence the laser desorption (laser ablation) process, we have used parafilm as a material to reduce the destruction of the amorphous network structure and/or promote the laser ablation synthesis of heavier species from those of lower mass. In this case, many new and higher mass clusters were identified. The maximum number of (40) new clusters was detected for the Ga-Sb-Se thin film containing the highest amount of antimony (31.2 at. %). This approach opens new possibilities for laser desorption ionization/laser ablation study of other materials. Finally, for selected binary and ternary clusters, their structure was calculated by using density functional theory optimization procedure
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