Ultra-low-cost near-infrared photodetectors on silicon

We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that form Schottky contact with Silicon. NIR photons excite plasmon resonances at metal nanoislands and plasmons decay into highly energetic charge carriers (hot electrons). These hot electrons get injected into Silicon (internal photoemission), resulting in photocurrent. Several groups have studied plasmonic nanoantennas using high resolution lithography techniques. In this work, we make use of randomly formed nanoislands for broad-band photoresponse at NIR wavelengths. We observe photoresponse up to 2000 nm wavelength with low dark current density about 50 pA/μm2. The devices exhibit photoresponsivity values as high as 2 mA/W and 600 μA/W at 1.3 μm and 1.55 μm wavelengths, respectively. Thin metal layer was deposited on low-doped n-type Silicon wafer. Rapid thermal annealing results in surface reconstruction of the metal layer into nanoislands. Annealing conditions control the average size of the nanoislands and photoresponse of the devices. An Al-doped Zinc Oxide (AZO) layer was deposited on the nanoislands using thermal atomic layer deposition (ALD) technique to acts as a transparent conductive oxide (TCO) and patterned using photolithography. AZO film creates electrical connection between the nanoislands and also makes a heterojunction to Silicon. Simple and scalable fabrication on Si substrates without the need for any sub-micron lithography or high temperature epitaxy process make these devices good candidates for ultra-low-cost broad-band NIR imaging and spectroscopy applications. © 2015 SPIE

Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition

In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step. © 2016 IEEE

∼3-nm ZnO nanoislands deposition and application in charge trapping memory grown by single ALD step

Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic Layer Deposition (ALD) and the electronic properties are characterized by UV-Vis-NIR Spectrophotometer and X-ray Photoelectron Spectroscopy. The results show that the nanostructures show quantum confinement effects in 1D. Moreover, Metal-Oxide-Semiconductor Capacitor (MOSCAP) charge trapping memory devices with ZnO nanoislands charge storage layer are fabricated by a single ALD step and their performances are analyzed. The devices showed a large memory window at low operating voltages with excellent retention and endurance characteristics due to the additional oxygen vacancies in the nanoislands and the deep barrier for the trapped holes due to the reduction in ZnO electron affinity. The results show that the ZnO nanoislands are promising in future low power memory applications. © The Author(s) 2016

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band-near-infrared photodetection

Cataloged from PDF version of article.In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/mu m(2). We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications

The investigation of photons energy distribution changing in ignition condition of equimolar deuterium- tritium fuel

At the beginning of thermonuclear ignition in fusion plasma, the bremsstrahlung radiation is dominant phenomenon, the photons distribution function is Planckian and plasma is considered as optically thick one. But at a certain energy, the bremsstrahlung radiation and Compton scattering losses rates become equal and plasma makes a transition from optically thick to optically thin and photons distribution switches from Planckian to a Bose-Einstein one. Dominating the Compton scattering and conservation of photon number density in this event, cause to increase the photons temperature and to decrease the negative role of Compton scattering in electrons balance equation. In this paper the photons distribution change effect in calculating of critical burn-up parameter by using of a Fortran programming code is investigated and the results are compared with a typical case where the photons have Planckian distribution throughout the ignition

Rough gold films as broadband absorbers for plasmonic enhancement of TiO2 photocurrent over 400-800 nm

<p> Recent years have witnessed an increasing interest in highly-efficient absorbers of visible light for the conversion of solar energy into electrochemical energy. This study presents a TiO2-Au bilayer that consists of a rough Au film under a TiO2 film, which aims to enhance the photocurrent of TiO2 over the whole visible region and may be the first attempt to use rough Au films to sensitize TiO2. Experiments show that the bilayer structure gives the optimal optical and photoelectrochemical performance when the TiO2 layer is 30 nm thick and the Au film is 100 nm, measuring the absorption 80-90% over 400-800 nm and the photocurrent intensity of 15 mu A.cm(-2), much better than those of the TiO2-AuNP hybrid (i.e., Au nanoparticle covered by the TiO2 film) and the bare TiO2 film. The superior properties of the TiO2-Au bilayer can be attributed to the rough Au film as the plasmonic visible-light sensitizer and the photoactive TiO2 film as the electron accepter. As the Au film is fully covered by the TiO2 film, the TiO2-Au bilayer avoids the photocorrosion and leakage of Au materials and is expected to be stable for long-term operation, making it an excellent photoelectrode for the conversion of solar energy into electrochemical energy in the applications of water splitting, photocatalysis and photosynthesis.</p