28 research outputs found
Microdistribution of oxygen in silicon and its effects on electronic properties
The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations
Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films
Structural and electronic properties of amorphous and single-phase
polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable
gamma phase nucleates homogeneously in the film bulk and has a high
resistivity, while the metastable kappa phase nucleates at the film surface and
has a moderate resistivity. The microstructures of hot-deposited and
post-annealed cold-deposited gamma films are quite different but the electronic
properties are similar. The increase in the resistivity of amorphous In2Se3
films upon annealing is interpreted in terms of the replacement of In-In bonds
with In-Se bonds during crystallization. Great care must be taken in the
preparation of In2Se3 films for electrical measurements as the presence of
excess chalcogen or surface oxidation may greatly affect the film properties.Comment: 23 pages and 12 figure
The Principal Conflict in Contemporary Russian Economic Thought: Traditional Approaches Against Economics
Surface Photovoltage and Deep Level Transient Spectroscopy Measurement of the Fe Impurities in Front‐End Operations of the IC CMOS Process
Surface photovoltage in silicon. Novel applications for chemical and biological sensing
The Surface Photovoltage technique has been recently employed for chemical and biological sensing. Selected chemical and biological species deposited on the crystalline silicon surface introduced surface barrier changes that were detected using the non-contact Surface Photovoltage mode. The magnitude of the surface barrier modifications provided a unique signature of the sensed species. The simplicity and sensitivity of this technique offer an exciting opportunity for a new type of low-cost sensing devices
Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma
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Structural and electronic properties of amorphous and polycrystalline In2Se3 films
Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization