Microdistribution of oxygen in silicon and its effects on electronic properties

The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations

Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films

Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma films are quite different but the electronic properties are similar. The increase in the resistivity of amorphous In2Se3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In2Se3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties.Comment: 23 pages and 12 figure

The Principal Conflict in Contemporary Russian Economic Thought: Traditional Approaches Against Economics

The work deals with the ideological clashes in Russian economic thought after 1991. Based on Schumpeter's distinction between economic analysis and economic thought, the paper focuses on a principal conflict that divides a new generation of Westernminded scholars and traditional Russian political economists. This conflict, on the one hand, is described as an attempt of traditional political economists to keep their positions at the economic departments of the universities. The most vivid manifestation of the resistance to economics is the so-called Tsagolov School at Moscow State University. On the other hand, the conflict might be regarded as the reaction of Russian nationalism to the penetration of ?alien? influences that are rather incompatible with the antiindividualist traditions of Russian social thought. The movement towards the creation of a ?national political economy? based on holism and etatism is seen not only as an expression and a by-product of resistance to methodological individualism in economics, but also as implicitly state-induced ideological efforts in a period of transition to an autocratic regime in Russia

Surface photovoltage in silicon. Novel applications for chemical and biological sensing

The Surface Photovoltage technique has been recently employed for chemical and biological sensing. Selected chemical and biological species deposited on the crystalline silicon surface introduced surface barrier changes that were detected using the non-contact Surface Photovoltage mode. The magnitude of the surface barrier modifications provided a unique signature of the sensed species. The simplicity and sensitivity of this technique offer an exciting opportunity for a new type of low-cost sensing devices

Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma

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Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization