Job Stress and Work Ability Among Emergency Nurses in Isfahan, Iran

Background: Job stress is one of the most common health problems with clinical and psychological consequences, which can affect work ability among emergency nurses. Nevertheless, more studies are needed to shed light on the status of this disorder and its relevance to work ability in nurses in the emergency departments (EDs). Objectives: The current study aimed to determine job stress among emergency nurses and its association with work ability. Methods: This cross-sectional study was conducted in 2013 in hospitals affiliated to Isfahan University of Medical Sciences, Isfahan, Iran. Two hundred nurses who worked in the EDs were asked to complete a demographic questionnaire and special scales to assess their job stress and work ability. T-tests, analysis of variance, Pearson correlation coefficient and linear regression were used to analyze the data. Results: The mean job stress and work ability scores were 151.09 ± 0.01 and 26.9 ± 8.2, respectively. Fifty-five percent of the subjects had high job stress and fifty-seven percent showed low work ability. A significant indirect correlation was found between job stress and work ability scores in the subjects (P = 0.015). Conclusions: Nurses working in the EDs experience a high level of job stress and low work ability. This may decrease the quality of care and patients’ safety. Fulfilling the staff shortage in ED and improving management behaviors are important in this regard

Mechanical Properties of Silicon Nanowires with Native Oxide Surface State

Silicon nanowires have attracted considerable interest due to their wide-ranging applications in nanoelectromechanical systems and nanoelectronics. Molecular dynamics simulations are powerful tools for studying the mechanical properties of nanowires. However, these simulations encounter challenges in interpreting the mechanical behavior and brittle to ductile transition of silicon nanowires, primarily due to surface effects such as the assumption of an unreconstructed surface state. This study specifically focuses on the tensile deformation of silicon nanowires with a native oxide layer, considering critical parameters such as cross-sectional shape, length-to-critical dimension ratio, temperature, the presence of nano-voids, and strain rate. By incorporating the native oxide layer, the article aims to provide a more realistic representation of the mechanical behavior for different critical dimensions and crystallographic orientations of silicon nanowires. The findings contribute to the advancement of knowledge regarding size-dependent elastic properties and strength of silicon nanowires.Comment: 11 pages, 10 figure

N-acetylcysteine compared to metformin, improves the expression profile of growth differentiation factor-9 and receptor tyrosine kinase c-kit in the oocytes of patients with polycystic ovarian syndrome

Background: Paracrine disruption of growth factors in women with polycystic ovarian syndrome (PCOS) results in production of low quality oocyte, especially following ovulation induction. The aim of this study was to investigate the effects of metformin (MET), N-acetylcysteine (NAC) and their combination on the hormonal levels and expression profile of GDF-9, BMP-15 and c-kit, as hallmarks of oocyte quality, in PCOS patients. Materials and Methods: This prospective randomized, double-blind, placebo controlled trial aims to study the effects of MET, NAC and their combination (MET+NAC) on expression of GDF-9, BMP-15 and c-kit mRNA in oocytes [10 at the germinal vesicle (GV) stage, 10 at the MI stage, and 10 at the MII stage from per group] derived following ovulation induction in PCOS. Treatment was carried out for six weeks, starting on the third day of previous cycle until oocyte aspiration. The expression of GDF9, BMP15 and c-kit were determined by quantitative real time polymerase chain reaction (RT-qPCR) and western blot analysis. Data were analyzed with one-way ANOVA. Results: The follicular fluid (FF) level of c-kit protein significantly decreased in the NAC group compared to the other groups. Significant correlations were observed between the FF soluble c-kit protein with FF volume, androstenedione and estradiol. The GDF-9 expression in unfertilized mature oocytes were significantly higher in the NAC group compared to the other groups (P<0.001). Similar difference was not observed between the MET, NAC+MET and control groups. The c-kit expression in unfertilized mature oocytes were significantly lower in the NAC group compared to the other groups (P<0.001). Similar difference was not observed between the MET, NAC+MET and control groups (Registration number: IRCT201204159476N1). Conclusion: We concluded that NAC can improve the quality of oocytes in PCOS. © 2017, Royan Institute (ACECR). All rights reserved

Mechanical Properties of Silicon Nanowires with Native Oxide Surface State

Silicon nanowires have attracted considerable interest due to their wide-ranging applications in nanoelectromechanical systems and nanoelectronics. Molecular dynamics simulations are powerful tools for studying the mechanical properties of nanowires. However, these simulations encounter challenges in interpreting the mechanical behavior and brittle to ductile transition of silicon nanowires, primarily due to surface effects such as the assumption of an unreconstructed surface state. This study specifically focuses on the tensile deformation of silicon nanowires with a native oxide layer, considering critical parameters such as cross-sectional shape, length-to-critical dimension ratio, temperature, the presence of nano-voids, and strain rate. By incorporating the native oxide layer, the article aims to provide a more realistic representation of the mechanical behavior for different critical dimensions and crystallographic orientations of silicon nanowires. The findings contribute to the advancement of knowledge regarding size-dependent elastic properties and strength of silicon nanowires

Stencil lithography for bridging MEMS and NEMS

The damage inflicted to silicon nanowires (Si NWs) during the HF vapor etch release poses a challenge to the monolithic integration of Si NWs with higher-order structures, such as microelectromechanical systems (MEMS). This paper reports the development of a stencil lithography-based protection technology that protects Si NWs during prolonged HF vapor release and enables their MEMS integration. Besides, a simplified fabrication flow for the stencil is presented offering ease of patterning of backside features on the nitride membrane. The entire process on Si NW can be performed in a resistless manner. HF vapor etch damage to the Si NWs is characterized, followed by the calibration of the proposed technology steps for Si NW protection. The stencil is fabricated and the developed technology is applied on a Si NW-based multiscale device architecture to protectively coat Si NWs in a localized manner. Protection of Si NW under a prolonged (>3 h) HF vapor etch process has been achieved. Moreover, selective removal of the protection layer around Si NW is demonstrated at the end of the process. The proposed technology also offers access to localized surface modifications on a multiscale device architecture for biological or chemical sensing applications

Spin Fidelity for Three-qubit Greenberger-Horne-Zeilinger and W States Under Lorentz Transformations

Constructing the reduced density matrix for a system of three massive spin$-\frac{1}{2}$ particles described by a wave packet with Gaussian momentum distribution and a spin part in the form of GHZ or W state, the fidelity for the spin part of the system is investigated from the viewpoint of moving observers in the jargon of special relativity. Using a numerical approach, it turns out that by increasing the boost speed, the spin fidelity decreases and reaches to a non-zero asymptotic value that depends on the momentum distribution and the amount of momentum entanglement.Comment: 12pages, 2 figure

The effect of miRNA mimic hsa-miR-7704 on in-vitro replication of herpes simplex virus type 1

Background: Herpes simplex virus type 1 (HSV-1) infections are of the most common diseases in human population. HSV-1 can cause subclinical to severe diseases, especially in immunocompromised patients. There are few anti-herpes drugs for treatment of HSV-1 infection. Acyclovir is one of the most important drugs. The extensive use of this drug has led to the development of resistant strains. Therefore, development of new anti-herpes drugs with different mechanisms is noticeable. This study aimed to use microRNAs as a novel method for inhibiting HSV-1 infection. Methods: Synthesized miRNA mimics hsa-miR-7704 (miR-SX1) were transfected into Hela cells, and then infected with HSV-1. Cellular morphological changes were observed 24 hours post-infection by inverted microscope, and photographed. Viral titers were measured using 50 tissue culture infective dose (TCID 50 ) method. Findings: miR-SX-1-transfected cells produced low-titer HSV-1, without affecting cell viability. Conclusion: The data suggest that miR-SX1 inhibits HSV-1 replication, and may provide an alternative mechanism to prevent HSV-1 infection. © 2018, Isfahan University of Medical Sciences(IUMS). All rights reserved

Effect of Native Oxide on Stress in Silicon Nanowires : Implications for Nanoelectromechanical Systems

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS

Nanomechanical Modeling of the Bending Response of Silicon Nanowires

Understanding the mechanical behavior of silicon nanowires is essential for the implementation of advanced nanoscale devices. Although bending tests are predominantly used for this purpose, their findings should be properly interpreted through modeling. Various modeling approaches tend to ignore parts of the effective parameter set involved in the rather complex bending response. This oversimplification is the main reason behind the spread of the modulus of elasticity and strength data in the literature. Addressing this challenge, a surface-based nanomechanical model is introduced in this study. The proposed model considers two important factors that have so far remained neglected despite their significance: (i) intrinsic stresses composed of the initial residual stress and surface-induced residual stress and (ii) anisotropic implementation of surface stress and elasticity. The modeling study is consolidated with molecular dynamics-based study of the native oxide surface through reactive force fields and a series of nanoscale characterization work through in situ three-point bending test and Raman spectroscopy. The treatment of the test data through a series of models with increasing complexity demonstrates a spread of 85 GPa for the modulus of elasticity and points to the origins of ambiguity regarding silicon nanowire properties, which are some of the most commonly employed nanoscale building blocks. A similar conclusion is reached for strength with variations of up to 3 GPa estimated by the aforementioned nanomechanical models. Precise consideration of the nanowire surface state is thus critical to comprehending the mechanical behavior of silicon nanowires accurately. Overall, this study highlights the need for a multiscale theoretical framework to fully understand the size-dependent mechanical behavior of silicon nanowires, with fortifying effects on the design and reliability assessment of future nanoelectromechanical systems

Building the impedance model of a real machine

A reliable impedance model of a particle accelerator can be built by combining the beam coupling impedances of all the components. This is a necessary step to be able to evaluate the machine performance limitations, identify the main contributors in case an impedance reduction is required, and study the interaction with other mechanisms such as optics nonlinearities, transverse damper, noise, space charge, electron cloud, beam-beam (in a collider). The main phases to create a realistic impedance model, and verify it experimentally, will be reviewed, highlighting the main challenges. Some examples will be presented revealing the levels of precision of machine impedance models that have been achieved