JLSPに在籍する看護学部学生の外国語学習現状とキャリア意向

The current study examines the comparison of the attitudes towards foreign language learning and career aspirations among Vietnamese undergraduate nursing students in the Japanese Language Special Program (JLSP) and the regular program (RP). Data were collected via an online questionnaire administered to students in Vietnam during spring 2023. Results reveal that JLSP students invest more time and effort into in-class language study and self-study compared to RP students, leading to higher perceived proficiency levels. Notably, JLSP students show an inclination towards pursuing job opportunities in Japan, particularly in the caregiving and nursing sectors, while RP students tend to prefer staying in Vietnam. It has become clear that learning attitudes and career aspirations vary greatly depending on the language chosen.本稿は、ベトナムでの看護学部生の日本語特別プログラム（JLSP）と通常プログラム（RP）における外国語学習への態度とキャリア志向比較調査した。データは、2023年春にオンラインで収集された。結果として、JLSP学生はRP学生よりも、語学授業や自己学習により多くの時間と努力を費やし、より高い能力レベル向上に対する認識が示された。特に、JLSP学生は、介護や看護分野での日本での就職に対する意向がある一方、RP学生はベトナムでの就職に対する意向があった。つまり、選択する言語によって、学習態度やキャリア志向が大きく異なることが明らかとなった

Thermoresistance of p-Type 4H–SiC Integrated MEMS Devices for High-Temperature Sensing

There is an increasing demand for the development and integration of multifunctional sensing modules into power electronic devices that can operate in high temperature environments. Here, the authors demonstrate the tunable thermoresistance of p‐type 4H–SiC for a wide temperature range from the room temperature to above 800 K with integrated flow sensing functionality into a single power electronic chip. The electrical resistance of p‐type 4H–SiC is found to exponentially decrease with increasing temperature to a threshold temperature of 536 K. The temperature coefficient of resistance (TCR) shows a large and negative value from −2100 to −7600 ppm K−1, corresponding to a thermal index of 625 K. From the threshold temperature of 536–846 K, the electrical resistance shows excellent linearity with a positive TCR value of 900 ppm K−1. The authors successfully demonstrate the integration of p–4H–SiC flow sensing functionality with a high sensitivity of 1.035 μA(m s−1)−0.5 mW−1. These insights in the electrical transport of p–4H–SiC aid to improve the performance of p–4H–SiC integrated temperature and flow sensing systems, as well as the design consideration and integration of thermal sensors into 4H–SiC power electronic systems operating at high temperatures of up to 846 K

Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.Comment: 4 pages, 5 figure

MaxNet and TCP Reno/RED on Mice Traffic

International audienceCongestion control is a distributed algorithm to share network bandwidth among competing users on the Internet. In the common case, quick response time for mice traffic (HTTP traffic) is desired when mixed with elephant traffic (FTP traffic). The current approach using loss-based with Additive Increase, Multiplicative Decrease (AIMD) is too greedy and eventually, most of the network bandwidth would be consumed by elephant traffic. As a result, it causes longer response time for mice traffic because there is no room left at the routers. MaxNet is a new TCP congestion control architecture using an explicit signal to control transmission rate at the source node. In this paper, we show that MaxNet can control well the queue length at routers and therefore the response time to HTTP traffic is several times faster than with TCP Reno/RED

A rapid and cost-effective metallization technique for 3C-SiC MEMS using direct wire bonding

This paper presents a simple, rapid and cost-effective wire bonding technique for single crystalline silicon carbide (3C–SiC) MEMS devices. Utilizing direct ultrasonic wedge–wedge bonding, we have demonstrated for the first time the direct bonding of aluminum wires onto SiC films for the characterization of electronic devices without the requirement for any metal deposition and etching process. The bonded joints between the Al wires and the SiC surfaces showed a relatively strong adhesion force up to approximately 12.6–14.5 mN and excellent ohmic contact. The bonded wire can withstand high temperatures above 420 K, while maintaining a notable ohmic contact. As a proof of concept, a 3C–SiC strain sensor was demonstrated, where the sensing element was developed based on the piezoresistive effect in SiC and the electrical contact was formed by the proposed direct-bonding technique. The SiC strain sensor possesses high sensitivity to the applied mechanical strains, as well as exceptional repeatability. The work reported here indicates the potential of an extremely simple direct wire bonding method for SiC for MEMS and microelectronic applications

A hot-film air flow sensor for elevated temperatures

We report a novel packaging and experimental technique for characterizing thermal flow sensors at high temperatures. This paper first reports the fabrication of 3C-SiC (silicon carbide) on a glass substrate via anodic bonding, followed by the investigation of thermoresistive and Joule heating effects in the 3C-SiC nano-thin film heater. The high thermal coefficient of resistance of approximately −20 720 ppm/K at ambient temperature and −9287 ppm/K at 200 °C suggests the potential use of silicon carbide for thermal sensing applications in harsh environments. During the Joule heating test, a high-temperature epoxy and a brass metal sheet were utilized to establish the electric conduction between the metal electrodes and SiC heater inside a temperature oven. In addition, the metal wires from the sensor to the external circuitry were protected by a fiberglass insulating sheath to avoid short circuit. The Joule heating test ensured the stability of mechanical and Ohmic contacts at elevated temperatures. Using a hot-wire anemometer as a reference flow sensor, calibration tests were performed at 25 °C, 35 °C, and 45 °C. Then, the SiC hot-film sensor was characterized for a range of low air flow velocity, indicating a sensitivity of 5 mm−1 s. The air flow was established by driving a metal propeller connected to a DC motor and controlled by a microcontroller. The materials, metallization, and interconnects used in our flow sensor were robust and survived temperatures of around 200 °

A Versatile Sacrificial Layer for Transfer Printing of Wide Bandgap Materials for Implantable and Stretchable Bioelectronics

Improving and optimizing the processes for transfer printing have the potential to further enhance capabilities in heterogeneous integration of various sensing materials on unconventional substrates for implantable and stretchable electronic devices in biosensing, diagnostics, and therapeutic applications. An advanced transfer printing method based on sacrificial layer engineering for silicon carbide materials in stretchable electronic devices is presented here. In contrast to the typical processes where defined anchor structures are required for the transfer step, the use of a sacrificial layer offers enhances versatility in releasing complex microstructures from rigid donor substrates to flexible receiver platforms. The sacrificial layer also minimizes twisting and wrinkling issues that may occur in free- standing microstructures, thereby facilitating printing onto flat polymer surfaces (e.g., polydimethylsiloxane). The experimental results demonstrate that transferred SiC microstructures exhibit good stretchability, stable electrical properties, excellent biocompatibility, as well as promising sensing- functions associated with a high level of structural perfection, without any cracks or tears. This transfer printing method can be applied to other classes of wide bandgap semiconductors, particularly group III- nitrides and diamond films epitaxially grown on Si substrates, thereby serving as the foundation for the development and possible commercialization of implantable and stretchable bioelectronic devices that exploit wide bandgap materials.Employing a dissolvable film as a supporting layer for the fabrication of free- standing silicon carbide microstructures, the present work eliminates the wrinkling and twisting phenomena associated with nanomembranes grown at high temperatures. This technique enables transfer- printing of diverse microstructures of wide band gap semiconductors onto a soft substrate, creating a new class of stretchable electronics for biosensing and implanting applications.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/163418/3/adfm202004655_am.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/163418/2/adfm202004655.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/163418/1/adfm202004655-sup-0001-SuppMat.pd

From Russia with love: International risk-sharing, sanctions, and firm investments

We propose a novel explanation for why sanctions on Russian firms might not work as intended: these firms’ ability to diversify sanction risks via partner countries friendly with Russia. Using indirect links with partner firms as a plausibly exogenous proxy for this risk-sharing channel, we show that exposed Russian firms were able to leverage these links to alleviate the negative impacts of sanctions in 2014

Vietnam geographical exploitation under the United Nations Convention on the Law of the Sea in 1982 (UNCLOS 1982)

As an active member of the United Nations Convention on the Law of the Sea - UNCLOS, Vietnam has completed 3 Reports on the Limits of the Continental Shelf and has submitted two of them to the Commission on the Limits of the Continental Shelf - CLCS, before the deadline 13-5-2009. Those are: (1) Outer Limits of the Vietnam’s Extended Continental Shelf: North Area (VNM-N); (2) Outer Limits of the Vietnam’s Extended Continental Shelf: Middle Area (VNM-M) and (3) Vietnam - Malaysia Joint Continental Shelf Submission. The VNM-M has not yet been submitted but it was mentioned to the CLCS and will be submitted in the appropriate time.Vietnam’s submissions were highly appreciated by CLCS; although the CLCS has not yet organized a special sub-committee to look at our reports, the secretariat of CLCS has already posted the executive reports of our submissions, with our principle claims on the continental shelf, on the website of the CLCS since May 2009. This paper presents shortly the UNCLOS and its application in Vietnam case