Calculated elastic and electronic properties of MgB2_2 at high pressures

The effect of high pressure on structural and electronic properties of the novel superconductor \MB has been calculated using the full-potential linearized augmented-plane-wave method. Despite the layered crystal structure of \MB nearly isotropic compression (bulk modulus $B_0=140.1(6)$ GPa) is found with only a 1.2% decrease of the $c/a$ ratio at 10 GPa. The effect of pressure on the critical temperature has been estimated on the basis of BCS theory and good agreement with experimental data is found. Our results suggest that it is a combination of increasing phonon frequency and decreasing electronic density of states at the Fermi level which leads to the observed decrease of the critical temperature under pressure.Comment: 10 pages, 3 figures (EPS), Elsevier LaTeX. More detailed analysis of the pressure dependence of Tc; results unchanged. Manuscript accepted for publication in Solid State Commu

Two-Band-Type Superconducting Instability in MgB2

Using the tight-binding method for the $\pi$-bands in MgB$_2$, the Hubbard on-site Coulomb interaction on two inequivalent boron $p_z$-orbitals is transformed into expressions in terms of $\pi$-band operators. For scattering processes relevant to the problemin which a wave vector {\bf q} is parallel to $\hat{z}$, it is found to take a relatively simple form consisting of intra-band Coulomb scattering, interband pair scattering etc. with large constant coupling constants. This allows to get a simple expression for the amplitude of interband pair scattering between two $\pi$-bands, which diverges if the interband polarization function in it becomes large enough.The latter was approximately evaluated and found to be largely enhanced in the band structure in MgB$_2$. These results lead to a divergent interband pair scattering, meaning two-band-type superconducting instability with enhanced $T_c$. Adding a subsidiary BCS attractive interaction in each band into consideration, a semi-quantitative gap equation is given, and $T_c$ and isotope exponent $\alpha$ are derived. The present instability is asserted to be the origin of high $T_c$ in MgB$_2$.Comment: 4 pages, to be published in J. Phys. Soc. Jpn. vol. 70, No.

Strain Effect in MgB2/Stainless Steel Superconducting Tape

The influence of mechanical strain on the critical current (Ic) is investigated for MgB2/stainless steel (SUS316) superconducting tapes. The tapes are fabricated by using 'powder in tube' method and deformation process without any heat treatment. The tensile axial strain along tape length is successfully induced to the sample by using a U-shape holder made of stainless steel (SUS304). Two samples are examined at 4.2 K in 5 T (B is applied perpendicular to the tape surface). While the initial Ic at zero external strain state (Ic0) varies (30.4 and 33.3 A), normalized Ic (Ic/Ic0) vs. external strain relations fall on the same curve. Linear increase of Ic is observed from zero external strain state to 0.5% strain (107% of Ic0). Rapid and large degradation occurs at the strain exceeding 0.4-0.5%. High durability against stress can be expected for MgB2/stainless steel superconducting tapes.Comment: 3 pages including 2 figures, submitted to Physica

Synthesis and photoemission study of as-grown superconducting MgB2 thin films

As-grown superconducting thin films of MgB2 were prepared by molecular beam epitaxy (MBE), and studied by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). Only films prepared at temperatures between 150 and 320 deg. showed superconductivity. A best TC onset of 36 K with a sharp transition width of -1 K was obtained although the film crystallinity was poor. The in-situ photoelectron spectra obtained on the surfaces of the MBE grown MgB2 films were free from dirt peaks. XPS revealed that the binding energy of the Mg 2p levels in MgB2 is close to that of metallic Mg, and the binding energy of B 1s is close to that of transition-metal diborides. The valence UP spectra showed a clear Fermi edge although the density of states (DOS) at EF is low and the major components of the valence band are located between 5 and 11 eV.Comment: ISS 2001 proceedin

Macroscopic self ordering of solution processible poly (3,3'-dialkylquaterthiophene) by floating film transfer method

Ordering and alignment of p-conjugated polymer chains are highly desirable for high performance and long life organic electronic devices. We report here self assembly of ordered and aligned solution processible Poly(3,3‴-dialkylquaterthiophene) (PQT-12) polymer at macroscopic level using Floating Film Transfer Method (FTM). PQT-12 polymer film is formed over solution of ethylene glycol and glycerol at different temperatures viz. 22, 26, 33, and 38 C. PQT-12 films formed by FTM technique are further characterized for optical and morphological properties. UV-vis absorption (for polarize and unpolarize light) and surface topography/phase imaging are carried out by using UV-vis spectrometer and atomic force microscope (AFM), respectively. UV-vis spectra show the polymer chains alignment perpendicular to the film propagation direction and it is well supported by AFM images. The effect of temperature on ordering and alignment of PQT-12 shows 33 C as an optimum temperature for alignment of polymer chains (a little compromise in ordering). The heating of polymer films at 110 C for 2 h in ambient causes significant changes in UV-vis absorbance spectra, optical anisotropy, and AFM topography/phase imaging. Our studies provide better understanding of ordering and alignment of PQT-12 chains and also disordering on heating. This work further provides a facile and user-friendly technique for the long range ordered self assembly of PQT-12, which shows enormous potential for various electronic applications

A comparative study of spin coated and floating film transfer method coated poly (3-hexylthiophene)/poly (3-hexylthiophene)-nanofibers based field effect transistors

A comparative study on electrical performance, optical properties, and surface morphology of poly(3-hexylthiophene) (P3HT) and P3HT-nanofibers based “normally on” type p-channel field effect transistors (FETs), fabricated by two different coating techniques has been reported here. Nanofibers are prepared in the laboratory with the approach of self-assembly of P3HT molecules into nanofibers in an appropriate solvent. P3HT (0.3 wt. %) and P3HT-nanofibers (∼0.25 wt. %) are used as semiconductor transport materials for deposition over FETs channel through spin coating as well as through our recently developed floating film transfer method (FTM). FETs fabricated using FTM show superior performance compared to spin coated devices; however, the mobility of FTM films based FETs is comparable to the mobility of spin coated one. The devices based on P3HT-nanofibers (using both the techniques) show much better performance in comparison to P3HT FETs. The best performance among all the fabricated organic field effect transistors are observed for FTM coated P3HT-nanofibers FETs. This improved performance of nanofiber-FETs is due to ordering of fibers and also due to the fact that fibers offer excellent charge transport facility because of point to point transmission. The optical properties and structural morphologies (P3HT and P3HT-nanofibers) are studied using UV-visible absorption spectrophotometer and atomic force microscopy , respectively. Coating techniques and effect of fiber formation for organic conductors give information for fabrication of organic devices with improved performance

Flux Jumping and a Bulk-to-Granular Transition in the Magnetization of a Compacted and Sintered MgB2 Superconductor

The recent discovery of intermediate-temperature superconductivity (ITC) in MgB2 by Akimitsu et al. and its almost simultaneous explanation in terms of a hole-carrier-based pairing mechanism by Hirsch, has triggered an avalanche of studies of its structural, magnetic and transport properties. As a further contribution to the field we report the results of field (H) and temperature (T) dependent magnetization (M) measurements of a pellet of uniform, large-grain sintered MgB2. We show that at low temperatures the size of the pellet and its critical current density, Jc(H) - i.e. its M(H) - ensure low field flux jumping, which of course ceases when M(H) drops below a critical value. With further increase of H and T the individual grains decouple and the M(H) loops drop to lower lying branches, unresolved in the usual full M(H) representation. After taking into account the sample size and grain size, respectively, the bulk sample and the grains were deduced to exhibit the same magnetically determined Jc s (e.g. 105 A/cm2, 20 K, 0T) and hence that for each temperature of measurement Jc(H) decreased monotonically with H over the entire field range, except for a gap within the grain-decoupling zone.Comment: 7 pages, 6 figures, Changes: Fig 6 Vertical scale an order of magnitude out (changed figure and associated text). Also corrected typo in last sectio

Substitution induced pinning in MgB_2 superconductor doped with SiC nano-particles

By doping MgB_2 superconductor with SiC nano-particles, we have successfully introduced pinning sites directly into the crystal lattice of MgB_2 grains (intra-grain pinning). It became possible due to the combination of counter-balanced Si and C co-substitution for B, leading to a large number of intra-granular dislocations and the dispersed nano-size impurities induced by the substitution. The magnetic field dependence of the critical current density was significantly improved in a wide temperature range, whereas the transition temperature in the sample MgB_2(SiC)_x having x = 0.34, the highest doping level prepared, dropped only by 2.6 K.Comment: 4 pages, 6 figure

Raman spectra of MgB2 at high pressure and topological electronic transition

Raman spectra of the MgB2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ~590 cm-1 related to the E2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ~ 5GPa exhibits a change in the slope as well as a "hysteresis" effect in the frequency vs. pressure behavior. These singularities in the E2g mode behavior under pressure support the suggestion that MgB2 may undergo a pressure-induced topological electronic transition.Comment: 2 figure

Superconducting Gap and Pseudogap in Iron-Based Layered Superconductor La(O1−x_{1-x}Fx_x)FeAs

We report high-resolution photoemission spectroscopy of newly-discovered iron-based layered superconductor La(O$_{0.93}$F$_{0.07}$)FeAs (Tc = 24 K). We found that the superconducting gap shows a marked deviation from the isotropic s-wave symmetry. The estimated gap size at 5 K is 3.6 meV in the s- or axial p-wave case, while it is 4.1 meV in the polar p- or d-wave case. We also found a pseudogap of 15-20 meV above Tc, which is gradually filled-in with increasing temperature and closes at temperature far above Tc similarly to copper-oxide high-temperature superconductors.Comment: 4 pages, 3 figures, J. Phys. Soc. Jpn. Vol. 77, No. 6 (2008), in pres