INTRODUCING AN OPTIMAL QCA CROSSBAR SWITCH FOR BASELINE NETWORK

Crossbar switch is the basic component in multi-stage interconnection networks. Therefore, this study was conducted to investigate performance of a crossbar switch with two multiplexers. The presented crossbar switch was simulated using quantum-dot cellular automata (QCA) technology and QCA Designer software, and was studied and optimized in terms of cell number, occupied area, number of clocks, and energy consumption. Using the provided crossbar switch, the baseline network was designed to be optimal in terms of cell number and occupied area. Also, the number of input states was investigated and simulated to verify accuracy of the baseline network. The proposed crossbar switch uses 62 QCA cells and the occupied area by the switch is equal to 0.06µm2 and its latency equals 4 clock zones, which is more efficient than the other designs. In this paper, using the presented crossbar switch, the baseline network was designed with 1713 cells, and occupied area of 2.89µm2

STUDY OF HOLE-BLOCKING AND ELECTRON-BLOCKING LAYERS IN A InAs/GaAs MULTIPLE QUANTUM-WELL SOLAR CELL

In this work, a GaAs-based quantum well solar cell with a 25-layer InAs/GaAs intermediate layer is simulated in Silvaco Atlas TCAD software. In order to reduce the recombination caused by the presence of the quantum layers and increase the absorption of photons, electron blocking layers (EBLs) and hole blocking layers (HBLs) have been added to the solar cell in an In0.5(Al0.7Ga0.3)0.5P semiconductor. The results show that the efficiency of the proposed solar cell increases 17.38% by obtaining impurity the thickness and doping of the EBL and HBL layers. It can be concluded that the use of the In0.5(Al0.7Ga 0.3)0.5P semiconductor with EBL and HBL layers decreases the open circuit voltage (Voc) caused in the quantum wells. The efficiency of the proposed solar cell with EBL and HBL layers was found to be 44.65%

CHAOTIC SEISMIC SIGNAL MODELING BASED ON NOISE AND EARTHQUAKE ANOMALY DETECTION

Since ancient times, people have tried to predict earthquakes using simple perceptions such as animal behavior. The prediction of the time and strength of an earthquake is of primary concern. In this study chaotic signal modeling is used based on noise and detecting anomalies before an earthquake using artificial neural networks (ANNs). Artificial neural networks are efficient tools for solving complex problems such as prediction and identification. In this study, the effective features of chaotic signal model is obtained considering noise and detection of anomalies five minutes before an earthquake occurrence. Neuro-fuzzy classifier and MLP neural network approaches showed acceptable accuracy of 84.6491% and 82.8947%, respectively. Results demonstrate that the proposed method is an effective seismic signal model based on noise and anomaly detection before an earthquake

A Novel De Bruijn Based Mesh Topology for Networks-on-Chip

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INTRODUCING A NOVEL HIGH-EFFICIENCY ARC LESS HETEROUNCTION DJ SOLAR CELL

The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ѵш group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al0.52In0.48P, GaAs and In0.49Ga0.51P), it was concluded that the semiconductor Al0.52In0.48P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (JSC)  = 22.96 mA/cm2, open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(η)= 58.28% were obtained under AM1.5 (1 sun) of radiation

The Effect of a Magnetic Field on the Melting of Gallium in a Rectangular Cavity

The role of magnetic field and natural convection on the solid–liquid interface motion, flow, and heat transfer during melting of gallium on a vertical wall is reported in this paper. The classical geometry consisting of a rectangular cavity with uniform but different temperatures imposed at two opposite side walls, insulated top, and bottom walls is considered. The magnetic field is imposed in the horizontal direction. A numerical code is developed to solve for natural convection coupled to solid–liquid phase transition and magnetic effects. The corresponding streamlines and isotherms predicted by the numerical model serve to visualize the complicated flow and temperature field. The interplay between the conduction and convection modes of heat transfer stimulated by the combination of the buoyancy-driven flow and the Lorentz force on the fluid due to the magnetic field are studied. The results show that the increase of Rayleigh number promotes heat transfer by convection, while the increase of Hartmann number dampens the strength of circulating convective currents and the heat transfer is then mainly due to heat conduction. These results are applicable in general to electrically conducting fluids and we show that magnetic field is a vital external control parameter in solid–liquid interface motion