High-performance InP-based photodetector in an amplifier layer stack on semi-insulating substrate

A waveguide photodetector (PD) based on semi-insulating (SI) indium phosphide (InP) was simulated, designed, and fabricated. The layer stack for this PD was optimized for use as an optical amplifier or laser and it can be combined with the passive components. By using an SI substrate and deep etching, a small, efficient, and high-speed PD was made, which allows for easy integration of source, detector, and passive optical components on a single chip. A 3-dB bandwidth of 35 GHz and 0.25 A/W external radio-frequency reponsivity is measured at 1.55-mum wavelength for a 1.5-mum-wide and 30-mum-long waveguide PD at -4-V bias voltage. The polarization dependence in the responsivity is less than 0.27 d

InP-based membrane photodetectors for optical interconnects to Si

We present the design, fabrication and a characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing

Modeling and characterization of InP-based high-speed pin-photodiodes

In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 µm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter

Modeling and characterization of InP-based high-speed pin-photodiodes

In this paper, the characteristics and a model of a side illuminated twin waveguide, pin-photodiode based on scattering parameters, is proposed. The equivalent small-signal model involves both the photodetector and the coplanar waveguide transmission line models. The measurement of the optoelectronic conversion parameter (S21) of photodetector at 1.55 µm is done by an optical heterodyne technique which demonstrates 25 GHz bandwidths. The equivalent circuit model fits well with both the measured reflection (S22) and the optoelectronic conversion parameter

An 825 GHz polarization-independent integrated multi-wavelength receiver

In this paper, we present an eight-channel polarization independent multiwavelength receiver which comprises an awg demultiplexer monolithically integrated with eight twin-waveguide pin-photodetectors. The bandwidth of the photodetectors is measured to be about 25 GHz and the optical crosstalk of the channels is below 18 dB