Introduction to the Special Issue on End-to-End Speech and Language Processing

The eleven papers in this special section focus on end-to-end speech and language processing (SLP) which is a series of sequence-to-sequence learning problems. Conventional SLP systems map input to output sequences through module-based architectures where each module is independently trained. These have a number of limitations including local optima, assumptions about intermediate models and features, and complex expert knowledge driven steps. It can be difficult for non-experts to use and develop new applications. Integrated End-to-End (E2E) systems aim to simplify the solution to these problems through a single network architecture to map an input sequence directly to the desired output sequence without the need for intermediate module representations. E2E models rely on flexible and powerful machine learning models such as recurrent neural networks. The emergence of models for end-to-end speech processing has lowered the barriers to entry into serious speech research. This special issue showcases the power of novel machine learning methods in end-to-end speech and language processing

Effects of annealing on the electrical properties of Fe-doped InP

The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after annealing. The annealing conditions were controlled by changing either the temperature or duration. Correlation between the change of electrical parameters with the change of defect concentration at different annealing stage was observed. The defects and the change of the concentrations in Fe-doped SI InP were detected by room-temperature photocurrent spectroscopy.published_or_final_versio

Overexpression Of Chd1l Is Positively Associated With Metastasis Of Lung Adenocarcinoma And Predicts Patients Poor Survival

CHD1L (chromodomain helicase/ATPase DNA binding protein 1-like gene) has been demonstrated as an oncogene in hepatocellular carcinoma (HCC), however, the role of CHD1L in non-small-cell lung cancer (NSCLC) tumorigenesis hasn't been elucidated. In this study, the expression and amplification status of CHD1L were examined by immunohistochemistry and fluorescence in situ hybridization respectively in 248 surgically resected NSCLCs. The associations between CHD1L expression and clinicopathologic features and the prognostic value of CHD1L were analyzed. Overexpression and amplification of CHD1L was found in 42.1% and 17.7% of NSCLCs, respectively. The frequency of CHD1L overexpression (53.2% vs. 28.1%, P = 0.002) and amplification (25.2% vs. 8.2%, P = 0.020) in adenocarcinoma (ADC), was much higher than that in squamous cell carcinoma (SCC). CHD1L overexpression was associated closely with ascending pN status (P < 0.001), advanced clinical stage (P = 0.001) and tumor distant metastasis (P = 0.001) in ADCs, but not in SCCs. For the whole cohort and ADC patients, univariate survival analysis demonstrated a significant association of CHD1L overexpression with shortened survival; and in multivariate analysis, CHD1L overexpression was evaluated as a independent predictor for overall survival and distant metastasis free survival. These results suggested that overexpression of CHD1L is positively associated with tumor metastasis of lung ADC, and might serve as a novel prognostic biomarker and potential therapeutic target for lung ADC patients.published_or_final_versio

Thermally induced conduction type conversion in n-type InP

n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.published_or_final_versio

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors

Antioxidative potential of Duranta repens (linn.) fruits against H2O2 induced cell death in vitro

The effects of Duranta repens fruits were investigated on H2O2 induced oxidative cell death to evaluate its antioxidative potential in vitro. HEK293T cells were treated with different concentrations [0-1000 ìg/ ml] of ethanol extract (E-Ex) and methanol extract (M-Ex) of D. repens for 24h, and then treated with 100 ìM H2O2 for 24h. Cell viability, antioxidant parameters of cells, and antioxidant constituents of the extracts were determined. Treatment with limited dose of E-Ex or M-Ex increased the survival rate of H2O2–treated HEK293T cells, however the extra-high dose showed growthinhibitory effect. Treatment with E-Ex or M-Ex protected cellular lipid per-oxidation. In vitro analyses showed the 2,2-diphenyl-1-picrylhydrazyl and H2O2 scavenging activities as well as reducing potential of the extracts. We report here that the limited dose of E-Ex and M-Ex possess antioxidative potential, which can protect H2O2-induced oxidative celldamage.Key words: Duranta repens (Linn.), Oxidative cell death, Lipid per-oxidation, Antioxidant, Phytochemical

Positron-lifetime study of compensation defects in undoped semi-insulating InP

Positron-lifetime and infrared-absorption spectroscopies have been used to investigate the compensation defects that render undoped n-type liquid encapsulated Czochralski-grown InP semi-insulating under high-temperature annealing. The positron measurements, carried out over the temperature range of 25-300 K, reveal in the as-grown material a positron lifetime of 282±5 ps which we associate with either the isolated indium vacancy V 3- In or related hydrogen complexes. The shallow donor complex V InH 4, responsible for much of the n-type conductivity and the strong infrared absorption signal at 4320 nm, is ruled out as a significant trapping site on the grounds that its neutral state is present at too low a concentration. After annealing at 950°C, in conjunction with the disappearance of the V InH 4 infrared-absorption signal, trapping into V In-related centers is observed to increase slightly, and an additional positron trapping defect having a lifetime of 330 ps appears at a concentration of ∼10 16 cm -3, indicating divacancy trapping. These results support the recent suggestion that the V InH 4 complex present in as-grown InP dissociates during annealing, forming V InH (3-n)- n (0≤n≤3) complexes and that the recombination of V In with a phosphorus atom results in the formation of EL2-like deep donor P In antisite defect, which compensates the material. It is suggested that the divacancy formed on annealing is V InV P, and that this defect is probably a by-product of the P In antisite formation.published_or_final_versio

Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts

P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.published_or_final_versio

Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP

Undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, current-voltage (I-V), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying the IR results, it is found that the concentration of this donor defect in Fe-doped InP is much higher than that in undoped InP. This result is consistent with the observation that a much higher concentration of Fe 2+ than the apparent net donor concentration is needed to achieve the semi-insulating (SI) property in InP. By studying the I-V and IR results of Fe-doped InP wafers sliced from different positions on an ingot, the high concentration of Fe 2+ is found to correlate with the existence of this hydrogen complex. The concentration of this donor defect is high in wafers from the top of an ingot. Correspondingly, a higher concentration of Fe 2+ can be detected in these wafers. These results reveal the influence of the complex defect on the compensation and uniformity of Fe-doped SI InP materials. © 2001 American Institute of Physics.published_or_final_versio