Thermal stability of TaN-based thin layers for Cu metallization

International audienc

Couches minces de nitrure de tantale pour barrières de diffusion

National audienc

Thermal stability of TaN-based thin layers for Cu metallization

International audienc

A microstructural characterization of Ta-based thin films

International audienc

Copper diffusion in TaN - based thin layers

International audienceThe diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer

Microstructural characterization of TaN coatings

24-26 septembreInternational audienc