282 research outputs found
A new iterative algorithm for solving the fictitious fluxes method problems for elliptic equations
Asymptotic homogenisation in strength and fatigue durability analysis of composites
This is the post-print version of the Article. Copyright @ 2003 Kluwer Academic Publishers.Asymptotic homogenisation technique and two-scale convergence is used for analysis of macro-strength and fatigue durability of composites with a periodic structure under cyclic loading. The linear damage accumulation rule is employed in the phenomenological micro-durability conditions (for each component of the composite) under varying cyclic loading. Both local and non-local strength and durability conditions are analysed. The strong convergence of the strength as the structure period tends to zero is proved and its limiting value is estimated.This work was supported under the research grant GR/M24592 from the Engineering and Physical Sciences Research Council, UK
Crossover from time-correlated single-electron tunneling to that of Cooper pairs
We have studied charge transport in a one-dimensional chain of small
Josephson junctions using a single-electron transistor. We observe a crossover
from time-correlated tunneling of single electrons to that of Cooper pairs as a
function of both magnetic field and current. At relatively high magnetic field,
single-electron transport dominates and the tunneling frequency is given by
f=I/e, where I is the current through the chain and e is the electron's charge.
As the magnetic field is lowered, the frequency gradually shifts to f=I/2e for
I>200 fA, indicating Cooper-pair transport. For the parameters of the measured
sample, we expect the Cooper-pair transport to be incoherent.Comment: 5 pages, 4 figures; v2: minor changes, clarifications, addition
Shot Noise of Single-Electron Tunneling in 1D Arrays
We have used numerical modeling and a semi-analytical calculation method to
find the low frequency value S_{I}(0) of the spectral density of fluctuations
of current through 1D arrays of small tunnel junctions, using the ``orthodox
theory'' of single-electron tunneling. In all three array types studied, at low
temperature (kT << eV), increasing current induces a crossover from the
Schottky value S_{I}(0)=2e to the ``reduced Schottky value''
S_{I}(0)=2e/N (where N is the array length) at some crossover current I_{c}.
In uniform arrays over a ground plane, I_{c} is proportional to exp(-\lambda
N), where 1/\lambda is the single-electron soliton length. In arrays without a
ground plane, I_{c} decreases slowly with both N and \lambda. Finally, we have
calculated the statistics of I_{c} for ensembles of arrays with random
background charges. The standard deviation of I_{c} from the ensemble average
is quite large, typically between 0.5 and 0.7 of , while the
dependence of on N or \lambda is so weak that it is hidden within the
random fluctuations of the crossover current.Comment: RevTex. 21 pages of text, 10 postscript figure
Classical-to-stochastic Coulomb blockade cross-over in aluminum arsenide wires
We report low-temperature differential conductance measurements in aluminum
arsenide cleaved-edge overgrown quantum wires in the pinch-off regime. At zero
source-drain bias we observe Coulomb blockade conductance resonances that
become vanishingly small as the temperature is lowered below . We
show that this behavior can be interpreted as a classical-to-stochastic Coulomb
blockade cross-over in a series of asymmetric quantum dots, and offer a
quantitative analysis of the temperature-dependence of the resonances
lineshape. The conductance behavior at large source-drain bias is suggestive of
the charge density wave conduction expected for a chain of quantum dots.Comment: version 2: new figure 4, refined discussio
Towards single-electron metrology
We review the status of the understanding of single-electron transport (SET)
devices with respect to their applicability in metrology. Their envisioned role
as the basis of a high-precision electrical standard is outlined and is
discussed in the context of other standards. The operation principles of single
electron transistors, turnstiles and pumps are explained and the fundamental
limits of these devices are discussed in detail. We describe the various
physical mechanisms that influence the device uncertainty and review the
analytical and numerical methods needed to calculate the intrinsic uncertainty
and to optimise the fabrication and operation parameters. Recent experimental
results are evaluated and compared with theoretical predictions. Although there
are discrepancies between theory and experiments, the intrinsic uncertainty is
already small enough to start preparing for the first SET-based metrological
applications.Comment: 39 pages, 14 figures. Review paper to be published in International
Journal of Modern Physics
Formation of human capital as a key factor in ensuring the national security of agriculture in the digital economy
Over the past few years in many literary sources and the media an issue of the digital economy is rapidly gaining popularity due to the qualitative technological changes in society.
In current circumstances the qualitative component of labor resources called “human capital” is a priority value.
The authors have identified the main realities of the development of agribusiness, studied the main directions of information support on the example of the agricultural sector of the economy and identified the root causes of the slowdown in the innovation development of agriculture in Russia, the features of using information technologies in agribusiness have been considered in detail.peer-reviewe
Giant fluctuations of superconducting order parameter in Ferromagnet/superconductor single electron transistors
Spin dependent transport in a ferromagnet/superconductor/ferromagnet single
electron transistor is studied theoretically with spin accumulation, spin
relaxation, gap suppression, and charging effects taken into account. A strong
dependence of the gap on the magnetic state of the outer electrodes is found,
which gives rise to a negative magneto-resistance of up to 100 %. We predict
that fluctuations of the spin accumulation due to tunneling of quasi-particles
can play such an important role as to cause the island to fluctuate between the
superconductin
A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport
We have extended our supercomputer-enabled Monte Carlo simulations of hopping
transport in completely disordered 2D conductors to the case of substantial
electron-electron Coulomb interaction. Such interaction may not only suppress
the average value of hopping current, but also affect its fluctuations rather
substantially. In particular, the spectral density of current
fluctuations exhibits, at sufficiently low frequencies, a -like increase
which approximately follows the Hooge scaling, even at vanishing temperature.
At higher , there is a crossover to a broad range of frequencies in which
is nearly constant, hence allowing characterization of the current
noise by the effective Fano factor F\equiv S_I(f)/2e \left. For
sufficiently large conductor samples and low temperatures, the Fano factor is
suppressed below the Schottky value (F=1), scaling with the length of the
conductor as . The exponent is significantly
affected by the Coulomb interaction effects, changing from when such effects are negligible to virtually unity when they are
substantial. The scaling parameter , interpreted as the average
percolation cluster length along the electric field direction, scales as when Coulomb interaction effects are negligible
and when such effects are substantial, in
good agreement with estimates based on the theory of directed percolation.Comment: 19 pages, 7 figures. Fixed minor typos and updated reference
A Numerical Study of Transport and Shot Noise at 2D Hopping
We have used modern supercomputer facilities to carry out extensive Monte
Carlo simulations of 2D hopping (at negligible Coulomb interaction) in
conductors with the completely random distribution of localized sites in both
space and energy, within a broad range of the applied electric field and
temperature , both within and beyond the variable-range hopping region. The
calculated properties include not only dc current and statistics of localized
site occupation and hop lengths, but also the current fluctuation spectrum.
Within the calculation accuracy, the model does not exhibit noise, so
that the low-frequency noise at low temperatures may be characterized by the
Fano factor . For sufficiently large samples, scales with conductor
length as , where , and
parameter is interpreted as the average percolation cluster length. At
relatively low , the electric field dependence of parameter is
compatible with the law which follows from directed
percolation theory arguments.Comment: 17 pages, 8 figures; Fixed minor typos and updated reference
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