Semiconductor A3B5 nanostructures for infrared femtosecond lasers

Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results for the fast saturable absorbers. Semiconductor mirrors designed for Yb3+:KY(WO4)2 infrared laser mode locking led to 115 fs stable modelocking regime with average power close to CW operation. Results on fast saturable absorbers for spectral region of 1500 nm are also presented

Non-Linear Optical Phenomena in Detecting Materials as a Possibility for Fast Timing in Detectors of Ionizing Radiation

The time resolution of the detectors currently in use is limited by 50-70 ps due to the spontaneous processes involved in the development of the response signal, which forms after the relaxation of carriers generated during the interaction. In this study, we investigate the feasibility of exploiting sub-picosecond phenomena occurring after the interaction of scintillator material with ionizing radiation by probing the material with ultra-short laser pulses. One of the phenomena is the elastic polarization due to the local lattice distortion caused by the displacement of electrons and holes generated by ionization. The key feature of the elastic polarization is its short response time, which makes it prospective for using as an optically detectable time mark. The nonlinear optical absorption of femtosecond light pulses of appropriate wavelength is demonstrated to be a prospective tool to form the mark. This study was aimed at searching for inorganic crystalline media combining scintillation properties and non-linear absorption of ultra-short laser pulses. The nonlinear pump-and-probe optical absorption technique with 200 fs laser pulses was used to study the effects in lead tungstate, garnet-type, and diamond scintillator crystals

Toughening mechanisms in a high temperature cyanate ester resin modified with a thermoplastic polyimide

Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results for the fast saturable absorbers. Semiconductor mirrors designed for Yb3+:KY(WO4)2 infrared laser mode locking led to 115 fs stable modelocking regime with average power close to CW operation. Results on fast saturable absorbers for spectral region of 1500 nm are also presente

Semiconductor A(3)B(5) nanostructures for infrared femtosecond lasers

Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results for the fast saturable absorbers. Semiconductor mirrors designed for Yb3+:KY(WO4)2 infrared laser mode locking led to 115 fs stable modelocking regime with average power close to CW operation. Results on fast saturable absorbers for spectral region of 1500 nm are also presente