Preparation and Characterization of Antimony Doped Tin Oxide Thin Films Synthesized by Co-Evaporation of Sn and Sb using Plasma Assisted Thermal Evaporation

Tin oxide (SnO2) thin films are having promising properties such as high visible transmittance and low electric resistivity, makes them very important transparent conductor in a variety of optoelectronics devices. Further, doping with pentavalent impurity such as Antimony (Sb) enhances its conductivity considerably. In order to study the effect of Antimony doping, Antimony doped tin oxide (SnO2 : Sb) thin films have been prepared by the co-evaporation of Sn and Sb using Plasma Assisted Thermal Evaporation (PATE) in oxygen (O2) partial pressure at various doping level from 4% to 25%. The influence of various Sb doping levels on the compositional, electrical, optical and structural properties have been investigated using Energy Dispersive X-ray (EDX) spectroscopy, Ultraviolet-Visible (UV-VIS) transmission spectroscopy, four-probe resistivity measurement and X-ray Diffraction (XRD), respectively. EDX studies confirmed the different Sb doping levels in the grown films from 4 % to 25 %, while electrical resistivity is obtained in range of 0.36 to 9.5 Ohmcm using four-probe setup for 4 % to 25 % Sb doping levels. Transmittance spectra measured in UV-VIS range for Sb doped films show reduction in an average transmittance in respect to increase in Sb doping levels in the grown films. Whereas, XRD analysis reveals that higher Sb doping of 25 % induce the precipitation of antimony oxide (Sb2O3) phase and its precipitation suppressed the growth of SnO2 peaks as well as responsible for reduction in conductivity and transparency. The best electrical resistivity of optimized SnO2 : Sb (5 %) is 0.36 Ohmcm without deteriorating the high (~ 80 %) average transmittance in the wavelength region 300-800 nm in comparison to undoped SnO2 film (6.57 Ohmcm) , confirm the usefulness of SnO2 : Sb (5 %) films for device applications. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3102

Preparation and Characterization of Antimony Doped Tin Oxide Thin Films Synthesized by Co-Evaporation of Sn and Sb using Plasma Assisted Thermal Evaporation

Tin oxide (SnO2) thin films are having promising properties such as high visible transmittance and low electric resistivity, makes them very important transparent conductor in a variety of optoelectronics devices. Further, doping with pentavalent impurity such as Antimony (Sb) enhances its conductivity considerably. In order to study the effect of Antimony doping, Antimony doped tin oxide (SnO2 : Sb) thin films have been prepared by the co-evaporation of Sn and Sb using Plasma Assisted Thermal Evaporation (PATE) in oxygen (O2) partial pressure at various doping level from 4% to 25%. The influence of various Sb doping levels on the compositional, electrical, optical and structural properties have been investigated using Energy Dispersive X-ray (EDX) spectroscopy, Ultraviolet-Visible (UV-VIS) transmission spectroscopy, four-probe resistivity measurement and X-ray Diffraction (XRD), respectively. EDX studies confirmed the different Sb doping levels in the grown films from 4 % to 25 %, while electrical resistivity is obtained in range of 0.36 to 9.5 Ohmcm using four-probe setup for 4 % to 25 % Sb doping levels. Transmittance spectra measured in UV-VIS range for Sb doped films show reduction in an average transmittance in respect to increase in Sb doping levels in the grown films. Whereas, XRD analysis reveals that higher Sb doping of 25 % induce the precipitation of antimony oxide (Sb2O3) phase and its precipitation suppressed the growth of SnO2 peaks as well as responsible for reduction in conductivity and transparency. The best electrical resistivity of optimized SnO2 : Sb (5 %) is 0.36 Ohmcm without deteriorating the high (~ 80 %) average transmittance in the wavelength region 300-800 nm in comparison to undoped SnO2 film (6.57 Ohmcm) , confirm the usefulness of SnO2 : Sb (5 %) films for device applications. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3102

Erratum: Decrease in Incidence of Bronchopulmonary Dysplasia with Erythropoietin Administration in Preterm Infants: A Retrospective Study

<b><i>Background:</i></b> Despite advances in clinical care, the incidence of bronchopulmonary dysplasia (BPD) remains high in premature infants. Erythropoietin (EPO) is used for the treatment of anemia of prematurity (AOP) to decrease blood transfusion needs. EPO has been shown to mobilize circulating endothelial progenitor cells and to enhance lung repair in animal models. <b><i>Objective:</i></b> To determine whether EPO treatment for AOP was associated with a reduced incidence of BPD in premature infants. <b><i>Methods:</i></b> This retrospective study was performed on all live-born neonates with birth weights from 500 to 1,500 g and gestational age (GA) from 22 to 32 weeks admitted from 1994 to 2002. Infants who received EPO and those who did not receive EPO were compared for incidence of BPD and other morbidities. <b><i>Results:</i></b> Of<b> </b>478 patients, 297 received EPO before 36 weeks’ postmenstrual age (group 1) and 181 did not receive EPO (group 2). Group 1 was of similar birth weight but lower GA than group 2. The incidence of BPD was lower in group 1 than group 2 (26 vs. 36%, p = 0.03); after adjusting for significant risk factors, the adjusted odds ratio for BPD was 0.50 (95% CI 0.32, 0.79), p = 0.0028. The BPD rate was much lower when EPO was initiated before 4 weeks of age (16%) as compared to later initiation (44%). <b><i>Conclusions:</i></b> This study shows an association between EPO treatment and reduced incidence of BPD in preterm infants, particularly when EPO treatment was initiated within the first 4 weeks of life

Effect of frequency on the properties of plasma nitrided AISI 4340 steel

The paper presents the results of investigations of the structure and corrosion resistance of AISI 4340 steel after plasma nitriding with 10 kHz and 30 kHz pulse frequencies. Properties of the nitrided layer were analysed by using Scanning Electron Microscope (SEM), X-Ray Diffractometer (XRD) and micro-Vickers hardness tester. Corrosion rates were monitored through polarisation resistance technique using 3% NaCl solution. In our present work, it was found that plasma nitriding with 30 kHz frequency gave better corrosion resistance and higher surface hardness than 10 kHz on AISI 4340 steel

Heterostructure CuO/Co₃O₄ Nanocomposite: An Efficient Electrode for Supercapacitor and Electrocatalyst for Oxygen Evolution Reaction Applications

Earth-abundant transition metal oxides (TMOs) are promising electroactive materials for electrochemical energy conversion and storage applications due to their high theoretical specific capacity, enhanced electrocatalytic activity, and mechanical durability. However, the limited cycle stability and low conductivity of TMOs remain challenging for practical application. Herein, we developed a TMO-based nanocomposite of CuO/Co3O4 via precipitation followed by the microwave hydrothermal method and used as a bifunctional electroactive material for supercapacitor and oxygen evolution reaction (OER) applications. The CuO/Co3O4 nanocomposite electrode exhibits a high specific capacity of 586 C g–1 and an excellent cyclic reversibility of 113.6% under a high current density of 20 A g–1 after 5000 cycles. Apart from the high redox properties, the strong synergistic interaction between CuO and Co3O4 significantly enhances the electrocatalytic property of the material. On continuous electrolysis in 1 M KOH solution, the OER electrode fabricated with CuO/Co3O4 nanocomposite demonstrated a moderate overpotential (ηO2) of 270 mV at j = 10 mA cm–2, a slight Tafel slope of 54 mV dec–1, and significant OER stability. These results highlight the fabrication of high-performance TMOs-based CuO/Co3O4 nanocomposite and their utilization in electrochemical energy storage and conversion devices for attaining maximum efficiency