Three-Dimensional Devices Transport Simulation Lifetime andRelaxation Semiconductor

International audienceOur work is to create a three-dimensional Simulator (3D) used for the studyof the components to low geometry of design, and to determine in thevolume structure the potential distributions and densities of free carriers inbias voltage given by solving the system of Poisson and two continuitiesequations. The initial version can simulate components of lifetimesemiconductor. In this study, we make a comparison between the lifetimeand relaxation semiconductor in the conduction mode. In order to create alarger Simulator, we'll perform a calculation by varying am bipolar lifetimeway to move from lifetime semiconductor to relaxation semiconductor. Weconsider the case corresponding at two different values of diffusion lifetimeτ0 which is corresponding to a measured lifetime in current transport. Themethod of resolution consists to linearization of the equations transport bythe finite differences method. The algorithm for solving linear and stronglycoupled equations deduced from the physical model is the Newton-Raphson.However, in order to allow a better convergence and consequently animprovement of time computing 3D, a method combined, incorporating theNewton algorithm and the Gummel method was developed. PIN diodes areused for test of the simulation model