24 research outputs found
Effects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance
Get PDFAbstract The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the I on /I off ratio which is a significant parameter in digital application can be varied from 10 1 to 10 4 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency performance of FEDs is investigated and the cut-off frequency of the intrinsic transistor without parasitic capacitance is calculated. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic applications. JNS All rights reserve
Application of Differential Electrodes in a Dielectrophoresis-Based Device for Cell Separation
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A multi-objective mixed-model assembly line sequencing problem in order to minimize total costs in a Make-To-Order environment, considering order priority
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A mathematical model and artificial bee colony algorithm for the lexicographic bottleneck mixed-model assembly line balancing problem
No full textIntegrating ant colony and genetic algorithms in the balancing and scheduling of complex assembly lines
No full textPhysical properties of low temperature sputtering-deposited zirconium-doped indium oxide films at various oxygen partial pressures
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