Probing antiferromagnetism in NiMn/Ni/(Co)/Cu3Au(001) single-crystalline epitaxial thin films

Antiferromagnetism of equi-atomic single-crystalline NiMn thin film alloys grown on Ni/Cu3Au (001) is probed by means of magneto-optical Kerr effect (MOKE). Thickness-dependent coercivity (HC) enhancement of polar MOKE measurements in NiMn/Ni/Cu3Au(001) shows that ~7 atomic monolayers (MLs) NiMn order antiferromagnetically at room temperature. It is found that NiMn can couple to out-of-plane (OoP) as well as in-plane (IP) magnetized Ni films, the latter stabilized by Co under-layer deposition. The antiferromagnetic (AFM) ordering temperature (TAFM) of NiMn coupled to OoP Ni is found to be much higher (up to 110K difference) than in the IP case, for similar interfacial conditions. This is attributed to a magnetic proximity effect in which the ferromagnetic (FM) layer substantially influences TAFM of the adjacent AFM layer, and can be explained by either (i) a higher interfacial coupling strength and/or (ii) a thermally more stable NiMn spin structure when coupled to Ni magnetized in OoP direction than in IP. An exchange-bias effect could only be observed for the thickest NiMn film studied (35.7 ML); the exchange- bias field is higher in the OoP exchange-coupled system than in the IP one, possibly due to the same reason/s

Influence of NixMn1−x thickness and composition on the Curie temperature of Ni in NixMn1−x/Ni bilayers on Cu3Au(001)

We present a magneto-optical Kerr effect study of epitaxial bilayers consisting of Ni and NixMn1−x on Cu3Au(001). The bottom Ni layer, the NixMn1−x layer thickness and its chemical composition were changed and the Curie temperature of the system was determined. We focused on two different regimes of NixMn1−x composition, namely a Mn-rich with x between 0.25 and 0.5, and a Ni-rich with x around 0.7. In these two composition ranges, a NixMn1−x overlayer exhibits a different effect on the Curie temperature of the Ni layer. While Mn-rich NixMn1−x layers reduce the Curie temperature of the Ni underlayer, Ni-rich NixMn1−x layers enhance the Curie temperature with respect to the pure Ni film. This is attributed to changes in the effective thickness of the Ni layer by exchange interactions with the NixMn1−x overlayer

The structural and electrical characterization of europium sulfide thin films prepared with E-beam evaporation

In this study, EuS thin films with varying thicknesses (15, 25, and 50 nm) were deposited onto a Si/SiO2 substrate using e-beam evaporation. Subsequently, two Ag contact electrodes with a 0.2 mm spacing were prepared via thermal evaporation using a shadow mask. To investigate the influence of film thickness and temperature on the electrical properties of EuS thin films, current-voltage (I–V) measurements were performed in a temperature range of 300–433 K for a voltage range of −2 V to +2 V. The I–V characteristics exhibited a temperature-dependent behavior, particularly showing an increase in current with rising temperature in the forward bias region. Furthermore, an improvement in the Schottky behavior was observed with increasing EuS film thickness. Additionally, the AC electrical and dielectric properties of the EuS thin film were examined in a frequency range of 4 Hz–8 MHz. Capacitance, conductance, impedance, and the Cole–Cole characteristic of EuS were analyzed in detail with respect to frequency, temperature, and film thicknesses

Nanostructured Platinum and Platinum Alloy-Based Resistive Hydrogen Sensors: A Review

As a future energy source, hydrogen is used in many industrial applications, such as chemicals, semiconductors, transportation, etc. Hydrogen gas, which has many unusual properties compared to other gases, has the risk of being flammable and explosive when it is present in the atmosphere at concentrations of 4% and higher. We need hydrogen sensors both to determine the risks in advance and because we do not want hydrogen gas, which is a source of energy, to be lost due to leakage. Hydrogen sensors are used in hydrogen production plants to determine hydrogen purity, for leakage and safety in all areas where hydrogen gas is used, and also in the medical field, as hydrogen gas is a marker in disease diagnosis. In the context of classifying hydrogen sensors according to their physicochemical sensing mechanisms, resistive metallic hydrogen sensors stand out as a prevalent choice, with Pd, Pt, and their alloy counterparts being commonly employed as designated sensing materials. In this study, nanostructured platinum (Pt) and Pt alloy-based resistive hydrogen sensors are reviewed and discussed in detail. The sensing mechanism of Pt-based resistive hydrogen sensors has been explained by the scattering of charge carriers at the surface, coupled with its defects and grain boundaries, and by the formation of hydride (PtHx) phenomena, depending on the increase or decrease in resistance in the hydrogen environment

Coexistence of perpendicular and in-plane exchange bias using a single ferromagnetic layer in Pt/Co/Cr/CoO thin film

We studied the temperature dependence of magnetization and exchange bias in a Pt/Co/Cr/CoO multilayer thin film. These magnetic multilayers are of particular interest since the easy axis of ultra-thin Co is strongly affected by the interfacial anisotropies of neighbouring Pt and Cr layers. The room temperature measurements show that the sample has a magnetic easy axis only in the film plane. However, upon cooling the sample, the easy axis of the magnetization departs from its initial orientation and typical easy-axis hysteresis loops are obtained for both in-plane and perpendicular directions. In accordance with this change in the magnetization direction at lower temperatures, the sample shows an unexpected coexistence of perpendicular and in-plane exchange bias below the antiferromagnetic transition of CoO. The temperature dependence of the exchange bias field for both directions is also significantly different. Along the film plane, the exchange bias field monotonically decreases and disappears at 220 K with increasing temperature. For the perpendicular direction, however, the exchange bias field increases and reaches a maximum value at 80 K. Then it decreases and disappears at 150 K with further increasing temperature. The mechanisms behind this anomalous temperature dependence of the exchange bias as well as the step-like behaviour in the hysteresis curves are discussed. Copyright (C) EPLA, 201

Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors

Al/n-Si/Ti1-xO2CdxO/Al photodiodes were produced using sol-gel and spin coating methods where CdO dopant was applied on different concentrations (x = 0.0; x = 0.01; x = 0.05; x = 0.10). Cd dopant effect upon structural, optical, photodiode and electrical properties was assessed. Scanning electron microscope and energy-dispersive spectra were used in the structural investigation. Optic properties were assessed using UV-Vis spectroscopy and bandgap energies of the photodiodes were calculated which were found to be between 3.25 and 3.36 eV. Increased bandgap energy was observed with increased CdO doping rate. Photodiode properties were assessed under varying daylight illuminations. Barrier height, ideality factor, dark current, linear dynamic rate, photosensitivity, photoresponsivity of the photodiodes were calculated. Electrical properties of the Al/n-Si/Ti1-xO2CdxO/Al photodiodes were calculated where conductance-voltage and capacitance-voltage plots were obtained. Corrective conductance-voltage and corrective capacitance-voltage graphs confirm that the electrical properties of the photodiodes depend on AC signal frequency. Frequency-dependent electrical characteristics were attributed to the density of interface states which were found to be between 10(11) and 10(12). Decreased density of interface state was found for increased AC signal frequency.WOS:0006043334000402-s2.0-8509852719

Sputtered platinum thin films for resistive hydrogen sensor application

WOS: 000376532200026This work presents hydrogen (H-2) sensing properties of platinum (Pt) thin film deposited on glass substrate by sputter technique. The Pt thin films with different thickness prepared using RF sputtering method were characterized by the XRD, SEM and XPS techniques. Temperature dependent resistances and the gas measurements of the Pt thin films were investigated under a dry air flow at a temperature range from 30 degrees C to 200 degrees C. The H-2 sensing properties of Pt thin film sensors were also examined in the concentration range of 0.1-1% H-2. The results revealed that the Pt thin film with 2 nm thickness exhibited the best sensing performance to H-2 at 30 degrees C under dry air flow. (C) 2016 Elsevier B.V. All rights reserved.Scientific and Technological Research Council of Turkey (TUBITAK) [114M853]This study was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) with project number of 114M853