SiGe BiCMOS ICs for X-Band 7-Bit T/R module with high precision amplitude and phase control

Over the last few decades, phased array radar systems had been utilizing Transmit/Receive (T/R) modules implemented in III-V semiconductor based technologies. However, their high cost, size, weight and low integration capability created a demand for seeking alternative solutions to realize T/R modules. In recent years, SiGe BiCMOS technologies are rapidly growing their popularity in T/R module applications by virtue of meeting high performance requirements with more reduced cost and power dissipation with respect to III-V technologies. The next generation phased array radar systems require a great number of fully integrated, high yield, small-scale and high accuracy T/R modules. In line with these trends, this thesis presents the design and implementation of the first and only 7-Bit X-Band T/R module with high precision amplitude and phase control in the open literature, which is realized in IHP 0.25μ SiGe BiCMOS technology. In the scope of this thesis, sub-blocks of the designed T/R module such as low noise amplifier (LNA), inter-stage amplifier, SiGe Hetero-Junction Bipolar Transistor (HBT) Single- Pole Double-Throw (SPDT) switch and 7-Bit digitally controlled step attenuator are extensively discussed. The designed LNA exhibits Noise Figure (NF) of 1.7 dB, gain of 23 dB, Output Referred Compression Point (OP1dB) of 16 dBm while the inter-stage amplifier gives measured NF of 3 dB, gain of 15 dB and OP1dB of 18 dBm. Moreover, the designed SPDT switch has an Insertion Loss (IL) of 1.7 dB, isolation of 40 dB and OP1dB of 28 dBm. Lastly, the designed 7-Bit SiGe HBT digitally controlled step attenuator demonstrates IL of 8 dB, RMS attenuation error of 0.18 dB, RMS phase error of 2° and OP1dB of 16 dBm. The 7-Bit T/R module is constructed by using the sub-blocks given above, along with a 7- Bit phase shifter (PS) and a power amplifier (PA). Post-layout simulation results show that the designed T/R module exhibits a gain of 38 dB, RMS phase error of 2.6°, RMS amplitude error of 0.82 dB and Rx-Tx isolation of 80 dB across X-Band. The layout of T/R module occupies an area of 11.37 mm2

A 7-bit reverse-saturated SiGe HBT discrete gain step attenuator

In this study, the analysis, design and measured results of a fully integrated 7-Bit step attenuator implemented in a 0.25-μm Silicon-Germanium (SiGe) BiCMOS process technology, are described. The attenuator is designed based on delicately ordered and cascaded Π/T type attenuation blocks, which are comprised of series/shunt switches employing SiGe hetero-junction bipolar transistors (HBTs) with peak fT/fmax of 110/180 GHz. HBTs are employed as a series switch to decrease the insertion-loss of the attenuator. Moreover, to authors’ best knowledge, this is the first study presenting the effect of employing reverse-saturated HBTs as a shunt switch for each attenuation blocks. Thanks to this advancement, the highest input-referred 1-dB compression point (IP1dB) is reported for Si-based similar studies. This method also decreases the insertion-loss of the proposed attenuator. The measurements result in the state-of-the-art performance with 28.575 dB attenuation range by 0.225 dB gain steps while maintaining 7-bit amplitude resolution across 6.6 GHz to 12.8 GHz frequency band, where RMS phase error remains below 3.3∘ and insertion loss (IL) is less than 12.4 dB. The measured IP1dB of the attenuator is 13.5 dBm while drawing 8 mA from 3.3 V supply. The die occupies an area of 1.37 mm x 0.56 mm excluding pads

4-bit SiGe phase shifter using distributed active switches and variable gain amplifier for x-band phased array applications

This paper presents a 4-bit digitally controlled phase shifter for X-band (8-12.5 GHz) phased-arrays, implemented in 0.25-mu m SiGe BiCMOS process. Distributed active switches are utilized in first three bits. On-chip inductances are used to provide 22.5 degrees phase shift steps. The placement and the geometry of these inductances are optimized for minimum phase error and insertion loss. In order to compensate the gain variations of this stage, a single stage variable gain amplifier is used. The fourth bit which provides 0/180 degrees phase shift is obtained in third amplification stage, with switching between common base - common emitter configuration. With utilization of this technique overall phase error is significantly decreased and overall gain is increased. The phase shifter achieves 7dB gain with 3 dB of gain error. 360 degrees phase shift is achieved in 4 bit resolution with a phase error of 0.5 degrees at center frequency of 10GHz, and maximum 22 degrees phase error in 4.5 GHz bandwidth. The chip size is 2150 mu m x 1040 mu m including the bondpads. These performance parameters are comparable with the state of the art using similar technology

Figure 1: Simple block diagram of a SiGe BiCMOS On chip T/R module 4-Bit SiGe Phase Shifter using Distributed Active Switches and Variable Gain Amplifier For X-Band Phased Array Applications

Abstract-This paper presents a 4-bit digitally controlled phase shifter for X-band (8-12.5 GHz) phased-arrays, implemented in 0.25-µm SiGe BiCMOS process. Distributed active switches are utilized in first three bits. On-chip inductances are used to provide 22.5° phase shift steps. The placement and the geometry of these inductances are optimized for minimum phase error and insertion loss. In order to compensate the gain variations of this stage, a single stage variable gain amplifier is used. The fourth bit which provides 0/180° phase shift is obtained in third amplification stage, with switching between common basecommon emitter configuration. With utilization of this technique overall phase error is significantly decreased and overall gain is increased. The phase shifter achieves 7dB gain with 3 dB of gain error. 360° phase shift is achieved in 4 bit resolution with a phase error of 0.5° at center frequency of 10GHz, and maximum 22° phase error in 4.5 GHz bandwidth. The chip size is 2150 µm x 1040 µm including the bondpads. These performance parameters are comparable with the state of the art using similar technology

A wideband high isolation CMOS T/R switch for x-band phased array radar systems

This paper presents an SPDT switch which is designed to operate at 8-12 GHz frequency range (X-Band), as a sub module of the front end circuit of a phased array radar. The switch distinguishes itself from its counterparts with its larger frequency range and higher isolation that is uniformly distributed over its bandwidth. It is fabricated using 0.25 mu m SiGe BiCMOS technology of IHP Microelectronics (Germany). As a new technique, shunt inductors are placed next to shunt transistors in order to improve trade-off between insertion loss and isolation. It has isolation higher than 30 dB in entire band, input referred 1dB compression point is 27.6 dBm, insertion loss is between 2.7-4.1 dB, input and output referred return losses are better than 11 dB in the frequency range of 8-12 Gliz

A x-band SiGe BiCMOS triple-cascode LNA with boosted gain and P-1dB

In this brief, the design, implementation, and experimental results of an X-band low noise amplifier (LNA) implemented in 0.13 mu m SiGe BiCMOS process technology is reported. The presented LNA based on an inductively degenerated triple-cascode topology employing SiGe hetero-junction bipolar transistors (HBT) featuring f(T)/f (max) of 250/330 GHz. To authors' best knowledge, this brief is the first LNA incorporating triple-cascode topology and HBTs. Design techniques explored to enhance the gain, noise figure (NF), and linearity performance, along with the investigation of advantages provided by utilizing triple-cascode configuration are addressed. The measurement of the proposed LNA results in a minimum NF of 1.35 dB at 8 GHz, which remains less than 1.7 dB across 6-12 GHz frequency band. In addition, the LNA delivers a peak gain of 20.5 dB at 9 GHz, where it exhibits a state-of-the-art output 1-dB compression point (OP1dB) of 18.75 dBm and third-order intercept point OIP3 of 24.75 dBm, while drawing 21 mA dc current from a 4.8-V supply. According to the utilized figure-of-merit, the measured results are better compared to previously reported work in the open literature

A new 5-13 GHz slow-wave SPDT switch with reverse-saturated SiGe HBTs

This letter describes the analysis, design, and measured results of a fully integrated single-pole double-throw (SPDT) switch developed in 0.25-mu m silicon-germanium (SiGe) BiCMOS process technology, which features SiGe HBTs with peak f(T) / f(max) of 110/180 GHz. The switch is designed based on a shunt-shunt topology with a combination of various design and layout optimization approaches to improve the insertion loss (IL), isolation, and power handling capability. The designed switch including the applied techniques results in a measured IL of 2.3 dB and isolation of 32 dB at 8 GHz. The switch is able to attain a state-of-the-art input referred 1-dB compression point (IP1 dB) up to 30 dBm while drawing a current of 3 mA from a 6 V supply. The die has an area of only 775 mu m x 820 mu m. To the author's knowledge, the presented work is the first SPDT switch ever reported, that incorporates slow-wave transmission lines and reverse-saturated heterojunction bipolar transistors at the specified frequency range

The Effect of Preoperative Albendazole Treatment on Intramuscular Cyst Structure in a Patient with Simultaneous Cystic Echinococcusis of Liver and Vastus Lateralis Muscle

We report a 44-years-old woman with cystic echinococcosis (CE) who presented with simultaneous involvement of liver and vastus lateralis muscle to Istanbul University-Cerrahpasa, Istanbul, Turkey in 2020. Although she underwent surgery for the liver, the intramuscular mass was ignored. While the patient was under post-operative albendazole treatment, she was investigated for the mass on her right thigh which was excised later. The comparison of magnetic resonance imaging before and after albendazole treatment showed that albendazole eliminated the intramuscular vesicle structures by accelerating the degeneration process of the cyst. The comparison of pathology samples sent from both liver and intramuscular CE also revealed that the albendazole has left the laminar membrane intact, degenerate the germinative membrane, thereby reducing the intra-vesicle pressure and also caused the scolex structures to disappear. To the best of our knowledge, this is the first paper to report the effect of preoperative albendazole treatment on the structure of intramuscular CE

CYTOMEGALOVIRUS INFECTION IN ALLOGENEIC HEMATOPOIETIC CTEM CELL TRANSPLANT PATIENTS WITH HEMATOLOGICAL DISEASES: A SINGLE CENTER EXPERIENCE

44th Annual Meeting of the European-Society-for-Blood-and-Marrow-Transplantation (EBMT) -- MAR 18-21, 2018 -- Lisbon, PORTUGALSaydam, Guray/0000-0001-8646-1673; Sahin, Fahri/0000-0001-9315-8891WOS:000487702805093[No Abstract Available]European Soc Blood & Marrow Transplanta