Polariton effects in the dielectric function of ZnO excitons obtained by ellipsometry

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 031904 (2010) and may be found at https://doi.org/10.1063/1.3284656.The complex dielectric tensor of ZnO in the regime of the excitonic transitions is determined with ellipsometry and analyzed concerning the quantization of the electromagnetic field in terms of coupled polariton-eigenmodes. Negative sections in the real part indicate the significant formation of polaritons for the dipole-allowed excitons of the three upper valence-bands Γ7,Γ9,Γ7. The transverse-longitudinal splittings which separate the upper polariton branch from the lower branch, corresponding to the k-vector of the used light, are deduced precisely for each subband. Mainly for E∥c, additional absorption peaks are observed at the longitudinal B-exciton and closely above. One is considered to be a mixed-mode and the other is seen as a consequence of interference effects in an exciton free surface layer which is also visible in reflectance anisotropy spectroscopy.EC/FP7/218570/EU/MULTIFUNCTIONAL NANOMATERIALS CHARACTERISATION EXPLOITING ELLIPSOMETRY and POLARIMETRY/NANOCHAR

Optical spectra of ZnO in the far ultraviolet: First-principles calculations and ellipsometric measurements

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Low-Threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning

The performance of vertical-cavity surface-emitting lasers (VCSELs) is strongly dependent on the spectral detuning between the gain peak and the resonance wavelength. Here, we use angle-resolved photoluminescence spectroscopy to investigate the emission properties of AlGaN-based VCSELs emitting in the ultraviolet-B spectral range with different detuning between the photoluminescence peak of the quantum-wells and the resonance wavelength. Accurate setting of the cavity length, and thereby the resonance wavelength, is accomplished by using doping-selective electrochemical etching of AlGaN sacrificial layers for substrate removal combined with deposition of dielectric spacer layers. By matching the resonance wavelength to the quantum-wells photoluminescence peak, a threshold power density of 0.4 MW/cm2 was achieved, and this was possible only for smooth etched surfaces with a root mean square roughness below 2 nm. These results demonstrate the importance of accurate cavity length control and surface smoothness to achieve low-Threshold AlGaN-based ultraviolet VCSELs

Dielectric function and critical points of the band structure for hexagonal and cubic GaN and AlN

weitere beteiligte Personen: Dr. Andreas Hangleiter Stefan Potthast Donald J. A

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280-320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320-400 nm) to UVC (<280 nm)

Elucidating the origins of high preferential crystal orientation in quasi‐2D perovskite solar cells

Incorporating large organic cations to form 2D and mixed 2D/3D structures significantly increases the stability of perovskite solar cells. However, due to their low electron mobility, aligning the organic sheets to ensure unimpeded charge transport is critical to rival the high performances of pure 3D systems. While additives such as methylammonium chloride (MACl) can enable this preferential orientation, so far, no complete description exists explaining how they influence the nucleation process to grow highly aligned crystals. Here, by investigating the initial stages of the crystallization, as well as partially and fully formed perovskites grown using MACl, the origins underlying this favorable alignment are inferred. This mechanism is studied by employing 3-fluorobenzylammonium in quasi-2D perovskite solar cells. Upon assisting the crystallization with MACl, films with a degree of preferential orientation of 94%, capable of withstanding moisture levels of 97% relative humidity for 10 h without significant changes in the crystal structure are achieved. Finally, by combining macroscopic, microscopic, and spectroscopic studies, the nucleation process leading to highly oriented perovskite films is elucidated. Understanding this mechanism will aid in the rational design of future additives to achieve more defect tolerant and stable perovskite optoelectronics