Integration of Single Photon Emitters in 2D Layered Materials with a Silicon Nitride Photonic Chip

Photonic integrated circuits (PICs) enable miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Single photon emitters (SPEs) are central building blocks for such quantum circuits and several approaches have been developed to interface PICs with a host material containing SPEs. SPEs embedded in 2D transition metal dichalcogenides have unique properties that make them particularly appealing as PIC-integrated SPEs. They can be easily interfaced with PICs and stacked together to create complex heterostructures. Since the emitters are embedded in a monolayer there is no total internal reflection, enabling very high light extraction efficiencies without the need of any additional processing to allow efficient single photon transfer between the host and the underlying PIC. Arrays of 2D-based SPEs can moreover be fabricated deterministically through STEM patterning or strain engineering. Finally, 2D materials grown with high wafer-scale uniformity are becoming more readily available, such that they can be matched at the wafer level with underlying PICs. Here we report on the integration of a WSe$_{2}$ monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips

16x25 GHz OFDM demultiplexer ina 220 nm silicon photonics using a parallel-serial filter approach

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Germanium-on-silicon mid-infrared waveguides and Mach-Zehnder interferometers

In this paper we describe Ge-on-Si waveguides and Mach-Zehnder interferometers operating in the 5.2 - 5.4 mu m wavelength range. 3dB/cm waveguide losses and Mach-Zehnder interferometers with 20dB extinction ratio are presented

On-chip mid-infrared photothermal spectroscopy using suspended silicon-on-insulator microring resonators

Mid-infrared spectroscopic techniques rely on the specific "fingerprint" absorption lines of molecules in the mid-infrared band to detect the presence and concentration of these molecules. Despite being very sensitive and selective, bulky and expensive equipment such as cooled mid-infrared detectors is required for conventional systems. In this paper, we demonstrate a miniature CMOS-compatible Silicon-on-Insulator (SOI) photothermal transducer for mid-infrared spectroscopy which can potentially be made in high volumes and at a low cost. The optical absorption of an analyte in the mid infrared wavelength range (3.25-3.6 mu m) is thermally transduced to an optical transmission change of a microring resonator through the thermo-optic effect in silicon. The photothermal signal is further enhanced by locally removing the silicon substrate beneath the transducer, hereby increasing the effective thermal isolation by a factor of 40. As a proof-of-concept, the absorption spectrum of a polymer that has been locally patterned in the annular region of the resonator was recovered using photothermal spectroscopy. The spectrum is in good agreement with a benchmark Fourier-transform infrared spectroscopy (FTIR) measurement. A normalized noise equivalent absorption coefficient (NNEA) of 7.6 X 10(-6) W/Hz(1/2) is estimated