Confinement creates a 9 GPa ambience: emergence of cristobalite phases in a silica film

We present here the results of the x-ray fluorescence (XRF), x-ray photoelectron spectroscopy (XPS), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersive Analysis of x-rays (EDAX), x-ray Reflectivity (XRR), Secondary Ion Mass spectroscopy (SIMS) and x-ray Diffraction (XRD) studies of silica films spin-coated from a Tetraethyl Orthosilicate (TEOS) precursor on native and hydrophilized Al substrates. It is observed that the substrates are mainly porous (porosity similar to 33%) AlO(OH), there is a diffuse interlayer of highly porous (porosity similar to 90%) AlO(OH), essentially a modification of the substrate, and a top layer of silica composed of nanocrystals with in-plane dimensions of 100-300 nm and thickness of 2.5 nm with a sharply defined silica-hydrated alumina interface. The silica nanocrystals were found in the metastable high pressure cristobalite phases with the tetragonal or alpha-phase co-existing in its low (0.77 GPa) and high (9 GPa) pressure structures. This indicates a high normal stress developed from the confinement and provides a basis for the quantitative assessment of the confinement force, which comes out to be higher in value than the van der Waals force but weaker than the Hydrogen bonding force

Ambient formation of high pressure Ag2Si2O5 and non-stoichiometric Ag0.3Al0.7 alloy under confinement

We report results of Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive Analysis of X-rays (EDAX), X-ray Photoelectron Spectroscopy (XPS), X-ray Reflectivity (XRR), and X-ray Diffraction (XRD) and residual stress measurement studies of Ag-silica composite films on Al(001) co-deposited from precursors and spin-coated at different frequencies under ambient conditions. FESEM and EDAX show Ag nanoparticle formation, and XRD, XPS, and XRR show Ag0.3Al0.7 alloy and Ag-rich silicate Ag2Si2O5 formation in all samples. The alloy is non-stoichiometric and non-equilibrium, while the silicate forms at high oxygen pressure. XRR shows the presence of three layers, nanoparticles on top, silicate in the middle, and alloy at the bottom, on an Ag-doped Al substrate. Film thickness decreases exponentially with frequency. Individual layers increase in crystal domain size with a frequency of 3000 rpm when the silicate layer thins below unit cell thickness and the growth has a two-dimensional preference. Our results suggest total confinement by film thinning and local confinement from the Ag nanolayer. Residual stress measurements on the films deposited at 500 and 5000 rpms show a gradual increase in the tensile stress. The increase in spinning frequency reveals the formation of high pressure ambience

Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering

International audienceIn situ thermal annealing (673-1273 K) during X-ray diffraction synchrotron measurements was performed to monitor the strain level as a proxy to follow the recovery of 300 keV Ar ion irradiated 4H-SiC single crystals. Results show that, when exposed to Ar ions at a fluence of 6.7 $\times$ 10$^{14}$ ions/cm$^2$ (0.7 dpa), the material suffers a maximum strain of 12$\%$ that reduces to 2$\%$ after the final anneal at 1273 K. In the same time, the disorder derived from the XRD data also demonstrates a thermal recovery of the crystalline structure. Hence, this work presents ion irradiation as a means to induce specific crystalline order and depth-controlled strain states within a few 100 s of nm window in 4H-SiC.[graphic not available: see fulltext][graphic not available: see fulltext

Room-temperature multiferroicity in GaFeO3 thin film grown on (100)Si substrate

Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO3 thin films (space group Pna2(1)), grown on economic and technologically important (100)Si substrates by a pulsed laser deposition technique. Structural analysis and comprehensive mapping of the Ga:Fe ratio across a length scale range of 10(4) reveals coexistence of epitaxial and chemical strain. It induces formation of finer magnetic domains and large magnetoelectric coupling-a decrease in remanent polarization by similar to 21% under similar to 50 kOe. Magnetic force microscopy reveals the presence of both finer (<100 nm) and coarser (similar to 2 mu m) magnetic domains. Strong multiferroicity in epitaxial GaFeO3 thin films, grown on a (100)Si substrate, brighten the prospect of their integration with Si-based electronics and could pave the way for development of economic and more efficient electromechanical, electrooptic, or magnetoelectric sensor devices. Published under an exclusive license by AIP Publishing