Modeling the Flux-Charge Relation of Memristor with Neural Network of Smooth Hinge Functions

The memristor was proposed to characterize the flux-charge relation. We propose the generalized flux-charge relation model of memristor with neural network of smooth hinge functions. There is effective identification algorithm for the neural network of smooth hinge functions. The representation capability of this model is theoretically guaranteed. Any functional flux-charge relation of a memristor can be approximated by the model. We also give application examples to show that the given model can approximate the flux-charge relation of existing piecewise linear memristor model, window function memristor model, and a physical memristor device

A Memristor Model with Piecewise Window Function

In this paper, we present a memristor model with piecewise window function, which is continuously differentiable and consists of three nonlinear pieces. By introducing two parameters, the shape of this window function can be flexibly adjusted to model different types of memristors. Using this model, one can easily obtain an expression of memristance depending on charge, from which the numerical value of memristance can be readily calculated for any given charge, and eliminate the error occurring in the simulation of some existing window function models

Thermodynamic properties and phase diagrams of spin-1 quantum Ising systems with three-spin interactions

The spin-1 quantum Ising systems with three-spin interactions on two-dimensional triangular lattices are studied by mean-field method. The thermal variations of order parameters and phase diagrams are investigated in detail. The stable, metastable and unstable branches of the order parameters are obtained. According to the stable conditions at critical point, we find that the systems exhibit tricritical points. With crystal field and biquadratic interactions, the system has rich phase diagrams with single reentrant or double reentrant phase transitions for appropriate ranges of the both parameters.Comment: 10 pages, 5 figure

Modeling the AgInSbTe Memristor

The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the AgInSbTe memristor has not been given before. We propose the flux-voltage controlled memristor model. With piecewise linear approximation technique, we deliver the flux-voltage controlled memristor model of the AgInSbTe memristor based on the experiment data. Our model fits the data well. The flux-voltage controlled memristor model and the piecewise linear approximation method are also suitable for modeling other kinds of memristor devices based on experiment data

Chiral Perturbation Theory and U(3)_L\times U(3)_R Chiral Theory of Mesons

We examine low energy limit of $U(3)_L\times U(3)_R$ chiral theory of mesons through integrating out fields of vector and axial-vector mesons. The effective lagrangian for pseudoscalar mesons at $O(p^4)$ has been obtained, and five low energy coupling constants $L_i(i=1,2,3,9,10)$ have been revealed. They are in good agreement with the results of CHPT's at $\mu \sim m_\rho$.Comment: 20 pages, Standard LaTex file, no finger

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic

Nursing Students’ Perception of the Stigma of Mental Illness

Background: Mental health disorders are highly prevalent in the U.S. Nursing students’ perceptions regarding the stigma of mental illness will impact the quality of care delivered and the patients’ outcomes. Method: Data was collected from 64 sophomore students. Five open ended questions were distributed to the students during the first class. All the surveys were collected by a volunteer student and were placed in the instructor’s mailbox in a sealed envelope. Results: The results revealed three categories: students ‘perceptions of the causes of mental illness stigmatization, their own perception of mental illness, and their perception on how to break the cycle of stigmatization of mental illness. Conclusion: Nursing students provided insightful perceptions regarding the causes of the stigma and possible interventions. Collaborative efforts to break the stigma of mental illness include: education, acceptance, increasing awareness, and better portrayal in the media