1,026 research outputs found

    Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds

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    We have performed a comparative study of the electronic properties of six different electron-doped metal phthalocyanine (MPc) compounds (ZnPc, CuPc, NiPc, CoPc, FePc, and MnPc), in which the electron density is controlled by means of potassium intercalation. In spite of the complexity of these systems, we find that the nature of the underlying molecular orbitals produce observable effects in the doping dependence of the electrical conductivity of the materials. For all the MPc's in which the added electrons are expected to occupy orbitals centered on the ligands (ZnPc, CuPc, and NiPc), the doping dependence of the conductivity has an essentially identical shape. This shape is different from that observed in MPc materials in which electrons are also added to orbitals centered on the metal atom (CoPc, FePc, and MnPc). The observed relation between the macroscopic electronic properties of the MPc compounds and the properties of the molecular orbitals of the constituent molecules, clearly indicates the richness of the alkali-doped metal-phthalocyanines as a model class of compounds for the investigation of the electronic properties of molecular systems

    Double-gated graphene-based devices

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    We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO2_2. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO2_2 films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO2_2 only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO2_2 layer.Comment: Replaced with revised version. To appear on New Journal of Physic

    Photon-assisted electron transport in graphene

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    Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron transport in graphene, where the low energy dynamics is described by the Dirac equation. In particular, such a setup describes a feasible way to probe energy dependent transmission in graphene. This is of substantial interest because the energy dependence of transmission in mesoscopic graphene is the basis of many peculiar transport phenomena proposed in the recent literature. Furthermore, we discuss the relevance of our analysis of ac transport in graphene to the observability of zitterbewegung of electrons that behave as relativistic particles (but with a lower effective speed of light).Comment: 5 pages, 2 figure

    The CERN Detector Safety System for the LHC Experiments

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    The Detector Safety System (DSS), currently being developed at CERN under the auspices of the Joint Controls Project (JCOP), will be responsible for assuring the protection of equipment for the four LHC experiments. Thus, the DSS will require a high degree of both availability and reliability. After evaluation of various possible solutions, a prototype is being built based on a redundant Siemens PLC front-end, to which the safety-critical part of the DSS task is delegated. This is then supervised by a PVSS SCADA system via an OPC server. The PLC front-end is capable of running autonomously and of automatically taking predefined protective actions whenever required. The supervisory layer provides the operator with a status display and with limited online reconfiguration capabilities. Configuration of the code running in the PLCs will be completely data driven via the contents of a "Configuration Database". Thus, the DSS can easily adapt to the different and constantly evolving requirements of the LHC experiments during their construction, commissioning and exploitation phases.Comment: Talk from the 2003 Computing in High Energy and Nuclear Physics (CHEP03), La Jolla, Ca, USA, March 2003, 5 pages, PDF. PSN THGT00

    Possible evidence of extended objects inside the proton

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    Recent experimental determinations of the Nachtmann moments of the inelastic structure function of the proton F2p(x, Q**2), obtained at Jefferson Lab, are analyzed for values of the squared four-momentum transfer Q**2 ranging from ~ 0.1 to ~ 2 (GeV/c)**2. It is shown that such inelastic proton data exhibit a new type of scaling behavior and that the resulting scaling function can be interpreted as a constituent form factor consistent with the elastic nucleon data. These findings suggest that at low momentum transfer the inclusive proton structure function originates mainly from the elastic coupling with extended objects inside the proton. We obtain a constituent size of ~ 0.2 - 0.3 fm.Comment: 1 reference adde

    Competition between Spin-Orbit Interaction and Zeeman Coupling in Rashba 2DEGs

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    We investigate systematically how the interplay between Rashba spin-orbit interaction and Zeeman coupling affects the electron transport and the spin dynamics in InGaAs-based 2D electron gases. From the quantitative analysis of the magnetoconductance, measured in the presence of an in-plane magnetic field, we conclude that this interplay results in a spin-induced breaking of time reversal symmetry and in an enhancement of the spin relaxation time. Both effects, due to a partial alignment of the electron spin along the applied magnetic field, are found to be in excellent agreement with recent theoretical predictions.Comment: 4 figures and 4 page

    Organic Single-Crystal Field-Effect Transistors

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    We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of μ\mu as high as 15 cm2^2/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.Comment: Review article, to appear in special issue of Phys. Stat. Sol. on organic semiconductor

    Electrostatic confinement of electrons in graphene nano-ribbons

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    Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn junctions are induced by the gate voltages, electrons are still confined, as a result of strong disorder, but in a larger area. Measurements on five other devices with different dimensions yield consistent results.Comment: 4 figures, 1 table, 4.4page
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