Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

A quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430°C up to a total time of 120min. Space charge density after each annealing step has been measured by transient current technique. The localized energy levels related to thermal double donors (TD) have been observed and studied in details by thermally stimulated currents (TSCs) in the range of 10–70K, and activation energies E and effective cross sections σ have been determined for both the emissions TD0∕+ (E=75±5meV, σ=4×10−14cm2) and TD+∕+ (E=170±5meV, σ=2×10−12cm2). The evolution of the space charge density caused by annealing has been unambiguously related to the activation of TDs by means of current deep level transient spectroscopy TSC, and current transients at constant temperature i(t,T). Our results show that TDs compensate the initial boron doping, eventually provoking the sign inversion of the space charge density. TD's generation rate has been found to be linear with the annealing time and to depend critically on the initial interstitial oxygen concentration, in agreement with previous models developed on low resistivity silicon

Ultra-fast silicon detectors

Abstract We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R&D topics are discussed

Charge collection and capacitance–voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Abstract The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance voltage ( C – V ) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreement between the reciprocal capacitance and the median collected charge is found when the frequency of the C – V measurement is selected such that it scales with the temperature dependence of the leakage current. Measuring C – V characteristics at prescribed combinations of temperature and frequency allows then a realistic estimate of the depletion characteristics of irradiated silicon strip detectors based on C – V data alone

Development of 3D detectors at FBK-irst

We report on the development of 3D detectors at Fondazione Bruno Kessler - irst in the framework of the CERN RD-50 Collaboration. Technological and design aspects dealing with the 3D Single Type Column detectors are reviewed, and selected results from the electrical and functional characterization of prototypes are reported and discussed. A new detector concept, namely 3D Double-side Double Type Column detectors, allowing for significant performance enhancement while maintaining a reasonable process complexity, is final ly addressed

Thermally Stimulated Currents in Nanocrystalline Titania

A thorough study on the distribution of defect-related active energy levels has been performed on nanocrystalline TiO2. Films have been deposited on thick-alumina printed circuit boards equipped with electrical contacts, heater and temperature sensors, to carry out a detailed thermally stimulated currents analysis on a wide temperature range (5-630 K), in view to evidence contributions from shallow to deep energy levels within the gap. Data have been processed by numerically modelling electrical transport. The model considers both free and hopping contribution to conduction, a density of states characterized by an exponential tail of localized states below the conduction band and the convolution of standard Thermally Stimulated Currents (TSC) emissions with gaussian distributions to take into account the variability in energy due to local perturbations in the highly disordered network. Results show that in the low temperature range, up to 200 K, hopping within the exponential band tail represents the main contribution to electrical conduction. Above room temperature, electrical conduction is dominated by free carriers contribution and by emissions from deep energy levels, with a defect density ranging within 10(14)-10(18) cm(-3), associated with physio- and chemi-sorbed water vapour, OH groups and to oxygen vacancies.Open access journal.This item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at [email protected]

Characterization of the INFN proton CT scanner for cross-calibration of x-ray CT

International audienceObjective: The goal of this study was to assess the imaging performances of the pCT system developed in the framework of INFN-funded (Italian National Institute of Nuclear Physics) research projects. The spatial resolution, noise power spectrum (NPS) and RSP accuracy has been investigated, as a preliminary step to implement a new cross-calibration method for x-ray CT (xCT).Approach: The INFN pCT apparatus, made of four planes of silicon micro-strip detectors and a YAG:Ce scintillating calorimeter, reconstructs 3D RSP maps by a filtered-back projection algorithm. The imaging performances (i.e. spatial resolution, NPS and RSP accuracy) of the pCT system were assessed on a custom-made phantom, made of plastic materials with different densities ((0.66, 2.18) g cm −3 ). For comparison, the same phantom was acquired with a clinical xCT system.Main results: The spatial resolution analysis revealed the nonlinearity of the imaging system, showing different imaging responses in air or water phantom background. Applying the Hann filter in the pCT reconstruction, it was possible to investigate the imaging potential of the system. Matching the spatial resolution value of the xCT (0.54 lp mm −1 ) and acquiring both with the same dose level (11.6 mGy), the pCT appeared to be less noisy than xCT, with an RSP standard deviation of 0.0063. Concerning the RSP accuracy, the measured mean absolute percentage errors were (0.23+−0.09)% in air and (0.21+−0.07)% in water.Significance: The obtained performances confirm that the INFN pCT system provides a very accurate RSP estimation, appearing to be a feasible clinical tool for verification and correction of xCT calibration in proton treatment planning