24 research outputs found

    Impact of Variable Ordering Cost and Promotional Effort Cost in Deteriorated Economic Order Quantity (EOQ) Model

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    The instantaneous economic order quantity (EOQ) profit optimization model for deteriorating items is introduced for analyzing the impact of variable ordering cost and promotional effort cost for leveraging profit margins in finite planning horizons. The objective of this model is to maximize the net profit so as to determine the order quantity and promotional effort factor. For any given number of replenishment cycles the existence of a unique optimal replenishment schedule are proved and further the concavity of the net profit function of the inventory system in the number of replenishments is established. The numerical analysis shows that an appropriate policy can benefit the retailer, especially for deteriorating items. Finally, sensitivity analyses with respect to the major parameters are also studied to draw managerial decisions in production systems

    A Multilevel Magnetic Synapse Based on Voltage-Tuneable Magnetism by Nitrogen Ion Migration

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    Altres ajuts: acords transformatius de la UABAltres ajuts: European Union NextGenerationEU/PRTR (grant CNS2022-135230)Advanced synaptic devices with simultaneous memory and processor capabilities are envisaged as core elements of neuromorphic computing (NC) for low-power artificial intelligence. So far, most synaptic devices are based on resistive memories, where the device resistance is tuned with applied voltage or current. However, the use of electric current in such resistive devices causes significant power dissipation due to Joule heating. Higher energy efficiency has been reported in materials exhibiting voltage control of magnetism (VCM). In particular, voltage-driven ion motion to modulate magnetism (magneto-ionics) is an emerging VCM mechanism that can offer new prospects for low-power implementation of NC. In the present work, voltage-driven nitrogen ion motion is exploited in transition metal nitride (CoFeN) thin films (i.e., nitrogen magneto-ionics) to emulate biological synapses. In the proposed device, distinct multilevel non-volatile magnetic states for analog computing and multi-state storage are realized. Moreover, essential synaptic functionalities of the human brain are successfully simulated. The device exhibits an excellent synapse with a remarkable retention time (≈6 months), high switching ratio and large endurance (≈103), for hardware implementation of NC. This research provides new insight into exploiting magneto-ionic-based synaptic devices for spin-based neuromorphic systems

    Highly cyclable voltage control of magnetism in cobalt ferrite nanopillars for memory and neuromorphic applications

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    Tuning the properties of magnetic materials by voltage-driven ion migration (magneto-ionics) gives potential for energy-efficient, non-volatile magnetic memory and neuromorphic computing. Here, we report large changes in the magnetic moment at saturation (mS) and coercivity (HC), of 34% and 78%, respectively, in an array of CoFe2O4 (CFO) epitaxial nanopillar electrodes (∼50 nm diameter, ∼70 nm pitch, and 90 nm in height) with an applied voltage of −10 V in a liquid electrolyte cell. Furthermore, a magneto-ionic response faster than 3 s and endurance >2000 cycles are demonstrated. The response time is faster than for other magneto-ionic films of similar thickness, and cyclability is around two orders of magnitude higher than for other oxygen magneto-ionic systems. Using a range of characterization techniques, magnetic switching is shown to arise from the modulation of oxygen content in the CFO. Also, the highly cyclable, self-assembled nanopillar structures were demonstrated to emulate various synaptic behaviors, exhibiting non-volatile, multilevel magnetic states for analog computing and high-density storage. Overall, CFO nanopillar arrays offer the potential to be used as interconnected synapses for advanced neuromorphic computing applications

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    Not AvailableField experiments were carried out on a sandy loam (Typic -Usochrept) soil in hot dry semi-arid subt tropical climate of Meerut to study the effect of tillage systems and crop residue mulching with fertilizer Application doze combination on soil physical properties (aggregate size distribution, mean weight diameter (GMD) and bulk density), chemical properties (soil organic carbon (SOC) and soil microbial biomass carbon(MBC)) and it s plant growth parameters and yield continuous wheat (Triticum aestiumL. emend. Fiori & Paol) system during 2008-11. Two tillage systems and four crop residue mulching with recommended doze fertilizer (RDF) combination were factorially combined in a split plot design with three replications and each plot size was 5 length and 4 m width. The tillage systems (main plots) were: no tillage (NT) and conventional tillage (CT), i.e. 4 harrowing +1 tine cultivating and one patella. The rice crop residue used as mulching and fertilizer combination treatments (sub-plots) consisted of four M – No mulch + recommended dose of fertilizer (RDF), M2- Mulch (6 t ha)-1 + recommended dose of fertilizer (120:60:40 kg NPK) (RDF), M - Mulch (0) + 125% recommended dose of fertilizer (RDF), M - Mulch (6 t ha-1 ) + 125% recommended dose of fertilizer (RDF). Results revealed that ZT had higher MWDs and lower GMDs than CT at both depths. The MWDs decreased with increase in soil depth for both tillage (T) treatments as well as rice crop residue mulching (M) treatments. The bulk density were not affected significantly (P < 0.05) by tillage 3systems and crop residue mulching × recommended dose of fertilizer (RDF) application at both 0-15 and 15-30 cm soil depth. Tillage system did not inf luence significantly on SOC at both depths but MBC influenced significantly (P=0.05) at upper depth (0-15 cm). The SOC and MBC were affected significantly (P = 0.01) by crop residue mulching with combination of recommended fertilizer application rate at upper depth (0-15 cm) but 15-30 cm, SOC was significantly at P = 0.05 but MBC had no significant different. The SOC was significantly higher value in ZT (5.61 g kg -1) than CT(4.69 gkg-1) at 0-15 cm soil depth. The SOC and MBC were recorded in ordered M4>M2>M>M1 which had significant difference value at P = 0.01.The zero tillage showed significantly (P = 0.01) higher infilt ration rate (1.96 cm h-1) than conventional tillage. The infiltration rate (IR) was significantly (P = 0.01) higher in M-1(2.15 cm h-1) followed by M (1.97-cm h-1). Tillage system inf luenced significantly (P = 0.05) on shoot dry weight and total biomass accumulation at all three growth stages i.e. ear emergence (EE), BGF and dough stages, however, on LAI at dough stage, it significant at P = 0.01. The growth parameters (LAI, shoot dry weight, root dry weight and total biomass accumulation) were influenced significantly (P = 0.01) by residue mulching with combination of recommended dose of fertilizer (RDF) at beginning grain filling (BGF) and dough stages, however, at ear emergence stage, it was only significant (P = 0.01) on shoot dry weight and total biomass accumulation. The higher grain yield value was observed in zero tillage as compared to conventional tillage. The highest grain yield of wheat cropwas observed in M4 (5.33 t ha-1) and followed by M2 (5.21 t ha-1), M 3(5.15t ha-1) and M1 (4.62 t ha-1) but difference among the treatments was non significant.Not Availabl

    Emulation of synaptic plasticity on cobalt-based synaptic transistor for neuromorphic computing

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    Neuromorphic computing (NC), which emulates neural activities of the human brain, is considered for the low-power implementation of artificial intelligence. Toward realizing NC, fabrication, and investigations of hardware elementssuch as synaptic devices and neuronsare crucial. Electrolyte gating has been widely used for conductance modulation by massive carrier injections and has proven to be an effective way of emulating biological synapses. Synaptic devices, in the form of synaptic transistors, have been studied using various materials. Despite the remarkable progress, the study of metallic channel-based synaptic transistors remains massively unexplored. Here, we demonstrated a three-terminal electrolyte gatingmodulated synaptic transistor based on a metallic cobalt thin film to emulate biological synapses. We have realized gating-controlled, non-volatile, and distinct multilevel conductance states in the proposed device. The essential synaptic functions demonstrating both short-term and long-term plasticity have been emulated in the synaptic device. A transition from short-term to long-term memory has been realized by tuning the gate pulse parameters, such as amplitude and duration. The crucial cognitive behavior, including learning, forgetting, and re-learning, has been emulated, showing a resemblance to the human brain. Beyond that, dynamic filtering behavior has been experimentally implemented in the synaptic device. These results provide an insight into the design of metallic channel-based synaptic transistors for NC.Agency for Science, Technology and Research (A*STAR)Ministry of Education (MOE)National Research Foundation (NRF)Submitted/Accepted versionThe authors acknowledge the support from the CRP grant NRF-CRP21-2018-003 of the National Research Foundation (NRF), Singapore. S.N.P. acknowledges the partial support from the Tier 2 grant MOE2019-T2-1-117 of the Ministry of Education (MOE) Singapore. P.M. thanks the Ministry of Education (MoE), India, and the Pratiksha Trust for the financial support. X.R.W. acknowledges support from the Agency for Science, Technology and Research (A*STAR) under its AME IRG grant (project no. A20E5c0094)

    Synaptic plasticity investigation in permalloy based channel material for neuromorphic computing

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    Artificial synaptic devices capable of synchronized storing and processing of information are the critical building blocks of neuromorphic computing systems for the low-power implementation of artificial intelligence. Compared to the diverse synaptic device structures, the emerging electrolyte-gated synaptic transistors are promising for mimicking biological synapses owing to their analogous working mode. Despite the remarkable progress in electrolyte-gated synaptic transistors, the study of metallic channel-based synaptic devices remains vastly unexplored. Here, we report a three-terminal electrolyte-gated artificial synapse based on metallic permalloy as the active layer. Gating controlled, non-volatile, rewritable, and distinct multilevel conductance states have been achieved for analog computing. Representative synaptic behaviors such as excitatory postsynaptic conductance (EPSC), paired-pulse facilitation (PPF), spike amplitude-dependent plasticity (SADP), spike duration-dependent plasticity (SDDP), and long-term potentiation/depression (LTP/D) have been successfully simulated in the synaptic device. Furthermore, switching from short-term to long-term memory regimes has been demonstrated through repeated training. Benefitting from the short-term facilitation, the synaptic device can also act as a high-pass temporal filter for selective communication. This research highlights the great potential of metallic channel-based synaptic devices for future neuromorphic systems and augments the diversity of synaptic devices.Ministry of Education (MOE)National Research Foundation (NRF)Submitted/Accepted versionThe authors acknowledge the support from the CRP Grant NRF-CRP21-2018-0003 of the National Research Foundation (NRF), Singapore. SNP acknowledges the partial support from the Tier 2 grant MOE2019-T2-1-117 of the Ministry of Education (MOE) Singapore. PSAK acknowledges support from the Ministry of Education (MoE), India

    A multilevel electrolyte-gated artificial synapse based on ruthenium-doped cobalt ferrite

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    Synaptic devices that emulate synchronized memory and processing are considered the core components of neuromorphic computing systems for the low-power implementation of artificial intelligence. In this regard, electrolyte-gated transistors (EGTs) have gained much scientific attention, having a similar working mechanism as the biological synapses. Moreover, compared to a traditional solid-state gate dielectric, the liquid dielectric has the key advantage of inducing extremely large modulation of carrier density while overcoming the problem of electric pinholes, that typically occurs when using large-area films gated through ultra-thin solid dielectrics. Herein we demonstrate a three-terminal synaptic transistor based on ruthenium-doped cobalt ferrite (CRFO) thin films by electrolyte gating. In the CRFO-based EGT, we have obtained multilevel non-volatile conductance states for analog computing and high-density storage. Furthermore, the proposed synaptic transistor exhibited essential synaptic behavior, including spike amplitude-dependent plasticity (SADP), spike duration-dependent plasticity (SDDP), long-term potentiation (LTP), and long-term depression (LTD) successfully by applying electrical pulses. This study can motivate the development of advanced neuromorphic devices that leverage simultaneous modulation of electrical and magnetic properties in the same device and show a new direction to synaptic electronics.Ministry of Education (MOE)National Research Foundation (NRF)Submitted/Accepted versionThe authors acknowledge the support from the CRP grant NRF-CRP21-2018-0003 of the National Research Foundation (NRF), Singapore. SNP acknowledges the partial support from the Tier 2 Grant MOE2019-T2-1-117 of the Ministry of Education (MOE) Singapore. PSAK acknowledges support from the Ministry of Education (MoE), India

    Synaptic behavior of Fe₃O₄-based artificial synapse by electrolyte gating for neuromorphic computing

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    Neuromorphic computing (NC) is a crucial step toward realizing power-efficient artificial intelligence systems. Hardware implementation of NC is expected to overcome the challenges associated with the conventional von Neumann computer architecture. Synaptic devices that can emulate the rich functionalities of biological synapses are emerging. Out of several approaches, electrolyte-gated synaptic transistors have attracted enormous scientific interest owing to their similar working mechanism. Here, we report a three-terminal electrolyte-gated synaptic transistor based on Fe3O4 thin films, a half-metallic spinel ferrite. We have realized gate-controllable multilevel, non-volatile, and rewritable states for analog computing. Furthermore, we have emulated essential synaptic functions by applying electrical stimulus to the gate terminal of the synaptic device. This work provides a new candidate and a platform for spinel ferrite-based devices for future NC applications.Ministry of Education (MOE)National Research Foundation (NRF)Submitted/Accepted versionThe authors acknowledge the support from the CRP Grant No. NRF-CRP21-2018-0003 of the National Research Foundation (NRF), Singapore. S.N.P. acknowledges the partial support from the Tier 2 Grant No. MOE2019-T2-1-117 of the Ministry of Education (MOE) Singapore. P.M. thanks the Ministry of Education (MoE), India, and the Pratiksha Trust, India, for the financial support. S.G.B. acknowledges INSPIRE Faculty Fellowship, DST, INDIA for the funding
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