Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.

Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage. The combination of both types of transistor on the same chip provides a high performance circuit with a high packing density. In this work 0.5-µm BiCMOS technology is fully utilized to realize silicon bipolar transistors with optimized performance. Preliminary electrical results are presented on bipolar transistors fabricated for the first time in Malaysia. Significant improvements in electrical device performance can be achieved by optimizing the emitter drive-in temperature and choice of annealing system

Electrical performance of 0.5 µm MOSFET on bond-and-etch-back silicon-on-insulator(BESOI) substrate

0.5 µm gate length MOSFET is fabricated on Bond-and-Etch-Back Silicon-On-Insulator (BESOI) substrate using bulk CMOS technology. For the purpose of silicon layer thickness adjustment, sacrificial oxidation is implemented on the device layer of 1.5 ± 0.5 µm device layer and 2 µm buried oxide thickness. Effects of the BESOI substrate and prior sacrificial oxidation on the threshold voltage, drive current and off-state leakage current are investigated from preliminary electrical measurements. Comparison between devices fabricated on bulk silicon and BESOI substrate were carried out. Results are presented in intrinsic transistor performance plots illustrating the relation and variation of critical parameters over the entire wafer