Design And Analysis Of Low Noise Amplifier Using Cadence

Low Noise Amplifier also known as LNA is one of the most significant component for application in wireless communication system. It is a very important part in RF receiver because it can reduce noise of gain by the amplifier when the noise of the amplifier is received directly. The low noise amplifier has been designed to get the better performance by follow the requirement in this new era consists of high gain, low noise figure, lower power consumption, small chip area, low cost and good input and output matching. In this research, a LNA schematic consists of three stages which are common gate amplifier, common drain amplifier and active inductor is designed to mitigate this constraint. Common gate and common drain are used for input and output stages in every LNA. Both are also used for excellent input and output matching and have a potential to get a lower noise whereas for active inductor, it is used to obtain the lower power consumption and to reduce the chip size in layout design. The results show that the proposed LNA is able to achieve the best performance with a simulated gain of 14.7dB, extremely lower power consumption of 0.8mW, noise figure of 7dB and small chip area 0.26mm². Consequently, this modified LNA is appropriate for low-voltage applications especially in wireless communication system

Deposition of Micro Contact Based Probe Cell for IC Testing by Dc Magnetron Sputtering Technique

This study presents the deposition of micro contact probe cell for IC testing deposited by dc sputtering technique on a glass substrate. Micro contact with thickness of 2800-7000 nm were deposited from Copper target at sputtering power of 125 W in argon ambient at a room temperature on a base layer of copper using mask. Then, the micro contacts were investigated by using profilometer. All the obtained results show the potential viability of the novel test fixture and thus solve the limitatio

Low Voltage CMOS Schmitt Trigger In 0.18μm Technology

This paper presents the effect of source voltage on performance of proposed Schmitt Trigger circuit. The proposed circuit was designed based on Conventional Schmitt Trigger by manipulating the arrangement of transistors and the width-length ratio. The simulation results have been carried out based on Mentor Graphics software in term of propagation delay. The circuit layout has been designed and checked by using design rule check (DRC) and layout versus schematic (LVS) method. From these results, the proposed full swing CMOS Schmitt Trigger was able to operate at low voltage (0.8V-1.5V

Hydrogen gas sensing of TiO2/MWCNT thick film via screen-printing technique

Titanium dioxide is a well-known sensing material for sensing gas, especially hydrogen, while the carbon nanotube is able to operate the gas sensor at room temperature. This study combined both characteristics and investigated varying operating temperatures and different hydrogen concentrations on the sensor response. To prepare the gas sensor sensing film, an organic binder was mixed with TiO2/MWCNT. Then, using a screen-printing method, the mixture was deposited on the alumina substrate. Annealing was done using air at 500°C and then using nitrogen at 600°C, for 30 min each. FESEM, EDX, and XRD were used to characterise the structural and morphological analysis of the sensing film. The operating temperature was varied at 100°C, 200°C, and 300°C and the hydrogen concentration varied from 100 - 1000 ppm. When exposed to hydrogen, the gas sensor showed decreased current, and vice versa when exposed to nitrogen. Therefore, the gas sensor can be categorised as a p-type gas sensor. The sensor was able to sense 500-1000 ppm of hydrogen at operating temperatures of 100°C and 200°C. The gas sensor was able to sense lower concentrations of hydrogen at 300°C i.e. 100-1000 ppm hydrogen; thus the optimal operating temperature for the gas sensor in this study is 300°C

Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer

This paper reports the studies on the inversion-layer mobility in n-channel Poly-Si TFT’s with 1016cm-3 substrate impurity concentration. The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (Eeff) was examined

Detecting hydrogen using TiO2-B2O3 at different operating temperature

Performance of TiO2-B2O3 gas sensor that annealed using nitrogen at 650°C for 30 minutes was observed and analyzed. The sensing film of the gas sensor was prepared by mixing TiO2-B2O3 with an organic binder. The sensing film was characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The gas sensor was exposed to hydrogen at a concentration of 100-1000 ppm with operating temperatures of 100°C and 200°C. However, no response was detected for 100 ppm at 100°C. But, as the operating temperature was increased to 200°C, the gas sensor indicated a good response for 100 ppm of hydrogen. The gas sensor exhibited p-type response based on decreased current when exposed to hydrogen. The sensitivity of gas sensor was calculated at 1.00, 2.18 and 3.58 for 100 ppm, 500 ppm and 1000 ppm respectively, at an operating temperature of 200°C

Low Power Operational Amplifier In 0.13um Technology

Low power is one of the most indispensable criteria in several of application. In this paper a low power operational amplifier consists of two stages and operates at 1.8V power. It is designed to meet a set of provided specification such as high gain and low power consumption. Designers are able to work at low input bias current and also at low voltage due to the unique behavior of the MOS transistors in sub-threshold region. This two-stage op-amp is designed using the Silterra 130nm technology library. The layout has been draw and its area had been calculated. The proposed two stage op-amp consists of NMOS current mirror as bias circuit, differential amplifier as the first stage and common source amplifier as the second stage. The first stage of an op-amp contributed high gain while the second stage contributes a moderate gain. The results show that the circuit is able to work at 1.8V power supply voltage (VDD) and provides gain of 69.73dB and 28.406MHz of gain bandwidth product for a load of 2pF capacitor. Therefore, the power dissipation and the consistency of this operational amplifier are better than previously reported operational amplifier

Response of TiO₂/MWCNT/B₂O₃ gas sensor to hydrogen using different organic binder

A binder influences the sensitivity, resistivity and optimal operating temperature of a gas sensor, which plays an important role in gas sensing. This work compared the sensitivity of the TiO₂/MWCNT/B₂O ₃ gas sensor to hydrogen with the addition of different organic binders, namely linseed oil and ethyl cellulose, to TiO₂/MWCNT/B₂O ₃ paste. Both pastes were deposited on alumina substrate using the screen-printing method and annealed at 500 °C. The sensing films of gas sensor, OBL and OBE were characterized by field emission scanning electron microscopy (FESEM), Energy dispersive x-ray (EDX), X-ray diffraction (XRD) Raman Spectroscopy and Brunauer-Emmett-Teller (BET). The gas sensors were also exposed to different concentrations of hydrogen (100–1000 ppm) at various operating temperature (100 °C, 200 °C and 300 °C). The obtained results revealed that ethyl cellulose-based gas sensor achieves better sensitivity, whereas linseed oil-based gas sensor has better conductivity and recovery characteristic

I-V performance analysis of flexible back Illuminated Dye Sensitized Solar cells (DSSCS) with various platinum catalyst contents

Flexible based Dye Sensitized Solar Cells (DSSCs) in nanotechnology revolution have always been in the thick of things where fabrication method and achieving good performances are concerned. Such concerns were adjudicated by improvising four(4) innate DSSCs structures composed of photoanode, semiconductor, electrolyte and counter electrode. This paper aims to observe the impact of changing Platinum(Pt) volumes on the counter electrodes of DSSCs by conducting tests on 0.2mm Titanium (Ti) foil based photoanode DSSCs. The deposition of Pt was varied into 70µl, 50µl and 30µl accordingly by spin coating technique at 1500 rpm. All samples were synthesized, deposited with Pt and assembled before being tested under solar light simulator of 1000W/cm2. Samples with 70µl Pt deposition indicated a higher efficiency (Ƞ) of 2.83%, even though it allowed less light penetration, while the 30µl Pt deposition sample provided efficiency (Ƞ) of 0.88% with more light penetration

Influence of B2O3 addition on the properties of TiO2 thick film at various annealing temperatures for hydrogen sensing

To increase the adhesion of thick film on a substrate, boron oxide (B2O3) was added to titanium dioxide (TiO2), and the change in the morphology, crystallinity and band gap of TiO2 thick film was investigated. TiO2 and TiO2-B2O3 pastes were prepared and deposited on the microscopic glass using screen-printing technique and then annealed under air at different temperatures of 400°C, 450°C and 500°C for 30 min. The morphology, elemental composition, structure and absorption of the thick films were characterized using FESEM, EDX, XRD and UV–visible spectroscopy. The TiO2 and TiO2-B2O3 thick films were fabricated as gas sensors and exposed to 100–1000 ppm of hydrogen at an operating temperature of 300°C. The results revealed that the addition of B2O3 increased the crystallinity of anatase phases and rutile phases in TiO2 as annealing temperature increased. The TiO2-B2O3(T500) gas sensor exhibited the highest response to various concentrations of hydrogen (100–1000 ppm) at an operating temperature of 300°C