Optical switch based on a fluid-filled photonic crystal fiber Bragg grating

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EVIDENCE FOR LOW DENSITY OF ACTIVE SITES IN SURFACE-ENHANCED RAMAN SCATTERING

La diffusion Raman exaltée de surface (SERS), utilisant la pyridine comme molécule sonde, a été étudiée en modifiant les électrodes d'Ag par des dépôts de Cu inférieurs à la monocouche. Dès un taux de recouvrement θ = 0,003, les sites actifs pour le SERS, associés aux atomes de Cu, deviennent plus stables, et de nouvelles bandes typiques de complexes de surface Cu-pyridine apparaissent, tandis que celles des complexes Ag-pyridine s'affaiblissent. L'amplification des champs électromagnétiques pour des électrodes rugueuses étant estimée inférieure à 1000, ces effets mettent en évidence le rôle dominant des processus d'exaltation locale dans SERS.Surface-enhanced Raman scattering (SERS) using pyridine as probe molecule was studied by modification of Ag-electrodes with deposition of Cu submonolayers. Already at a coverage of θ = 0.003 (SERS) active sites, so far associated with Cu atoms, become more stable and new bands typically for Cu-pyridine surface complexes begin to rise whereas those for Ag-pyridine drop. Since electromagnetic enhancement at roughened electrodes is estimated to be less than 1000, these effects evidence the dominant role of local enhancement processes in SERS

WDM-PON overlay for inter- and intra-network routing

An access architecture for optical intra-network transmission between different users is presented. We demonstrate a cognitive wavelength routing scheme and investigate its scalability

Tunable short cavity 10-Gb/s 1550-nm DFB-laser with integrated optical amplifier and taper

A novel tunable 1550-nm buried heterostructure (BH-) distributed feedback (DFB)-laser is presented consisting of a phase tuning section, a short cavity complex coupled DFB section, and an amplifier section with integrated optical taper. The device shows a narrow optical far-field, a high optical output power, up to 10-Gb/s direct modulation capability and a wavelength tuning range of several nanometers by varying the current in the phase section only

High-precision flip-chip technology for alloptical wavelength conversion using SOI photonic circuit

High-precision hybrid integration on SOI photonic circuit was developed. The technology was applied to fabricate an integrated high-speed all-optical wavelength converter. Potential of the platform was demonstrated by 40Gb/s all-optical wavelength switchin

Colorless ONU with discolored source and hybrid SOI integrated wavelength converter

We present a novel optical network unit (ONU) featuring a "colorless" directly modulated laser (DML) enabled by a hybridly integrated all-optical wavelength converter (AOWC), supporting operation beyond 10 Gb/s. It incorporates a semiconductor optical amplifier (SOA) for wavelength conversion and two cascaded delay interferometers (DIs) for spectral processing. The ONU was proven at full duplex 10-Gb/s data rate in a WDM passive optical network

Verfahren zur Gewinnung von Wirkstoffen aus heimischen Gewuerzpflanzen unter Anwendung tiefer Temperaturen Schlussbericht (Sachbericht)

Available from TIB Hannover: F04B392 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Fabrication and experimental demonstration of the first 160 Gb/s hybrid silicon-on-insulator integrated all-optical wavelength converter

We present a hybrid integrated photonic circuit on a silicon-on-insulator substrate that performs ultra high-speed all-optical wavelength conversion. The chip incorporates a 1.25 mm non-linear SOA mounted on the SOI board using gold-tin bumps as small as 14 m. ?he device performs chirp filtering and signal polarity inversion with two multi-mode interference (MMI) - based cascaded delay interferometers (DIs) monolithically integrated on the same SOI substrate. Full free spectral range (FSR) tuning of the DIs is accomplished by two independently tuneable on-chip thermal heaters. We demonstrate 160Gb/s all-optical wavelength conversion with power penalties of less than 4.6dB