Mechanisms for heat generation during deuterium and hydrogen loading of palladium nanostructures,

Abstract Our group has confirmed excess heat production and isotope effects in alumina and zeolite powders containing highly dispersed Pd nanoparticles. Varying the pressures and loading rates produced correlations between the exothermic and endothermic aspects of the experiments. It was shown that the generated power is proportional to the pressurization rate times a quantity , which is the energy content of what we called "fuel". There are two types of fuels, both of which can trigger the reaction that can be either exothermic or endothermic depending on the gas used in the experiment (deuterium or hydrogen). Observed heat generation during the pressurization phase is most likely of a chemical nature

High performance MIIM diode based on cobalt oxide/titanium oxide

Metal-insulator-metal (MIM) or metal-insulator-insulator- metal (MIIM) diodes are incorporated with micron-scale antennas in optical rectennas for converting infrared radiation into electrical power. They are suited for such an application due to their high frequency rectification properties1 and relatively low cost, as compared to diodes formed on single crystal substrates. Their rectification characteristics, as determined from direct current (DC) current-voltage [I(V)] measurements, are usually inferior to those of semiconductor diodes

DENSITY OF STATES STUDY IN SPUTTERED a-Si : H : EFFECT OF IMPURITIES AND H RELATED DEFECTS

We observe two regimes in the variation of gap size (E04) and density of states (DOS) as a function of H-content (cH) in sputtered a-Si : H. In the first regime, an increase in cH from 5 to 17% is accompanied by an exponential functional decrease of the DOS near midgap, which varies also directly with E04 over a wide range of preparation conditions. In the second regime, additional incorporation of H beyond 17% fails to further decrease the DOS (with cH and E04), which shows a saturation with scatter. This behavior is interpreted in terms of H-induced and residual impurity related defects. Variation of the DOS in the lower half of the gap, responsible for hole trapping, is observed via the hole mobility-lifetime product, which exhibits a dramatic drop with impurity incorporation (P, O) and deteriorates for increasing cH in the second regime