Extraction optimization and characterization of polysaccharide antioxidants from Pinellia ternata (Thunb) Breit rhizome

Purpose: To investigate the optimum extraction conditions of polysaccharides from Pinellia Rhizoma (PRP) and their antioxidant activities.Methods: Response surface methodology (RSM) was applied to optimize the water extraction conditions of PRP by Box-Benhnken design (BBD). A high performance liquid chromatography (HPLC) method was performed for determining the monosaccharide composition, while a high performance gel permeation chromatography (HPGPC) method was established for determining the molecular weight distribution of PRP. In addition, scavenging DPPH and superoxide anion radical scavenging assays were used to evaluate the antioxidant activities of PRP.Results: As a result, the optimum extraction conditions of PRP were as follows: extraction time, 103 min; solid-liquid ratio, 24 g/mL; and extraction no., 3. Under these conditions, the maximum extraction yield of PRP was 2.47 %, which matched the optimum value (2.55 %) predicted by RSM. The results of HPLC analysis suggest that the monosaccharide composition of PRP was mannose (Man), galactose acid (Gal acid), galactose (Gal), glucose (Glc), and arabinose (Ara) in molar ratios of 5.76:2.20:2.64:4.57:1, respectively, and the molecular weight ranged from 13592 to 445065. Furthermore, PRP showed marked antioxidant activities with the highest DPPH free radical scavenging rate of 71.5 % and O2- free radical scavenging rate of 87.5 % at a concentration of 10 mg/mL.Conclusion: RSM is a rapid and effective statistical technique for optimizing conditions for PRP extraction. Furthermore, PRP is a potential natural source of antioxidants.Keywords: Pinellia rhizoma, Polysaccharides Optimization extraction, Monosaccharide composition, Antioxidant activit

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) Inx Ga1-x N layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ∼220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices

Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) InxGa1-xN layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to similar to 220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices.National Key Research and Development Program of China [2016YFB0400100]; National Natural Science Foundation of China [61225019, 61376060, 61428401, 61521004]; Science Challenge Project [JCKY2016212A503]; NSAF [U1630109]; CAEP Microsystem and THz Science and Technology Foundation [CAEPMT201507]; Open Fund of the State Key Laboratory on Integrated OptoelectronicsSCI(E)ARTICLE