Anomalous momentum dependence of the multiband electronic structure of FeSe_1-xTe_x superconductors induced by atomic disorder

When periodicity of crystal is disturbed by atomic disorder, its electronic state becomes inhomogeneous and band dispersion is obscured. In case of Fe-based superconductors, disorder of chalcogen/pnictogen height causes disorder of Fe 3d level splitting. Here, we report an angle-resolved photoemission spectroscopy study on FeSe_1-xTe_x with the chalcogen height disorder, showing that the disorder affects the Fe 3d band dispersions in an orbital-selective way instead of simple obscuring effect. The reverse of the Fe 3d level splitting due to the chalcogen height difference causes the splitting of the hole band with Fe 3d x^2-y^2 character around the Gamma point.Comment: 5 pages, 4 figure

Prediction of Orbital Ordering in Single-Layered Ruthenates

The key role of the orbital degree of freedom to understand the magnetic properties of layered ruthenates is here discussed. In the G-type antiferromagnetic phase of Ca$_2$RuO$_4$, recent X-ray experiments reported the presence of 0.5 hole per site in the $d_{xy}$ orbital, while the $d_{\rm yz}$ and $d_{zx}$ orbitals contain 1.5 holes. This unexpected $t_{2g}$ hole distribution is explained by a novel state with orbital ordering (OO), stabilized by a combination of Coulomb interactions and lattice distortions. In addition, the rich phase diagram presented here suggests the possibility of large magnetoresistance effects, and predicts a new ferromagnetic OO phase in ruthenates.Comment: 4 pages, Revtex, with 2 figures embedded in the text. Submitted to Phys. Rev. Let

Inhibition of the photoinduced structural phase transition in the excitonic insulator Ta2_2NiSe5_5

Femtosecond time-resolved mid-infrared reflectivity is used to investigate the electron and phonon dynamics occurring at the direct band gap of the excitonic insulator Ta$_2$NiSe$_5$ below the critical temperature of its structural phase transition. We find that the phonon dynamics show a strong coupling to the excitation of free carriers at the \Gamma\ point of the Brillouin zone. The optical response saturates at a critical excitation fluence $F_C = 0.30~\pm~0.08$~mJ/cm$^2$ due to optical absorption saturation. This limits the optical excitation density in Ta$_2$NiSe$_5$ so that the system cannot be pumped sufficiently strongly to undergo the structural change to the high-temperature phase. We thereby demonstrate that Ta$_2$NiSe$_5$ exhibits a blocking mechanism when pumped in the near-infrared regime, preventing a nonthermal structural phase transition

Role of the Ce valence in the coexistence of superconductivity and ferromagnetism of CeO1−x_{1-x}Fx_{x}BiS2_{2} revealed by Ce L3L_3-edge x-ray absorption spectroscopy

We have performed Ce $L_3$-edge x-ray absorption spectroscopy (XAS) measurements on CeO$_{1-x}$F$_x$BiS$_2$, in which the superconductivity of the BiS$_2$ layer and the ferromagnetism of the CeO$_{1-x}$F$_x$ layer are induced by the F-doping, in order to investigate the impact of the F-doping on the local electronic and lattice structures. The Ce $L_3$-edge XAS spectrum of CeOBiS$_2$ exhibits coexistence of $4f^1$ (Ce$^{3+}$) and $4f^0$ (Ce$^{4+}$) state transitions revealing Ce mixed valency in this system. The spectral weight of the $4f^0$ state decreases with the F-doping and completely disappears for $x>0.4$ where the system shows the superconductivity and the ferromagnetism. The results suggest that suppression of Ce-S-Bi coupling channel by the F-doping appears to drive the system from the valence fluctuation regime to the Kondo-like regime, leading to the coexistence of the superconducting BiS$_2$ layer and the ferromagnetic CeO$_{1-x}$F$_x$ layer.Comment: 5 pages, 5 figure

Ultrafast Electronic Band Gap Control in an Excitonic Insulator

We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta$_2$NiSe$_5$ investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of $F_{C} = 0.2$ mJ cm$^{-2}$, the band gap $narrows$ transiently, while it is $enhanced$ above $F_{C}$. Hartree-Fock calculations reveal that this effect can be explained by the presence of the low-temperature excitonic insulator phase of Ta$_2$NiSe$_5$, whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta$_2$NiSe$_5$ with light on the femtosecond time scale

Inhibition of the photoinduced structural phase transition in the excitonic insulator Ta2NiSe5{\mathrm{Ta}}_{2}{\mathrm{NiSe}}_{5}

Femtosecond time-resolved midinfrared reflectivity is used to investigate the electron and phonon dynamics occurring at the direct band gap of the excitonic insulator Ta2NiSe5 below the critical temperature of its structural phase transition. We find that the phonon dynamics show a strong coupling to the excitation of free carriers at the Γ point of the Brillouin zone. The optical response saturates at a critical excitation fluence FC=0.30±0.08 mJ/cm2 due to optical absorption saturation. This limits the optical excitation density in Ta2NiSe5 so that the system cannot be pumped sufficiently strongly to undergo the structural change to the high-temperature phase. We thereby demonstrate that Ta2NiSe5 exhibits a blocking mechanism when pumped in the near-infrared regime, preventing a nonthermal structural phase transition