Electrostatically Shielded Quantum Confined Stark Effect Inside Polar Nanostructures

The effect of electrostatic shielding of the polarization fields in nanostructures at high carrier densities is studied. A simplified analytical model, employing screened, exponentially decaying polarization potentials, localized at the edges of a QW, is introduced for the ES-shielded quantum confined Stark effect (QCSE). Wave function trapping within the Debye-length edge-potential causes blue shifting of energy levels and gradual elimination of the QCSE red-shifting with increasing carrier density. The increase in the e−h wave function overlap and the decrease of the radiative emission time are, however, delayed until the “edge-localization” energy exceeds the peak-voltage of the charged layer. Then the wave function center shifts to the middle of the QW, and behavior becomes similar to that of an unbiased square QW. Our theoretical estimates of the radiative emission time show a complete elimination of the QCSE at doping densities ≥1020 cm−3, in quantitative agreement with experimental measurements

Electric field and exciton structure in CdSe nanocrystals

Quantum Stark effect in semiconductor nanocrystals is theoretically investigated, using the effective mass formalism within a $4\times 4$ Baldereschi-Lipari Hamiltonian model for the hole states. General expressions are reported for the hole eigenfunctions at zero electric field. Electron and hole single particle energies as functions of the electric field ($\mathbf{E}_{QD}$) are reported. Stark shift and binding energy of the excitonic levels are obtained by full diagonalization of the correlated electron-hole Hamiltonian in presence of the external field. Particularly, the structure of the lower excitonic states and their symmetry properties in CdSe nanocrystals are studied. It is found that the dependence of the exciton binding energy upon the applied field is strongly reduced for small quantum dot radius. Optical selection rules for absorption and luminescence are obtained. The electric-field induced quenching of the optical spectra as a function of $\mathbf{E}_{QD}$ is studied in terms of the exciton dipole matrix element. It is predicted that photoluminescence spectra present anomalous field dependence of the emission lines. These results agree in magnitude with experimental observation and with the main features of photoluminescence experiments in nanostructures.Comment: 9 pages, 7 figures, 1 tabl

Single ultrafast diffusive conduction based optoelectronic switch for multi-channel operation

For multi-channel optical switching, we report single ultrafast diffusive conduction based optoelectronic switches that accommodate >100 optical channels (with 2,000mm-2 channel density and <10% crosstalk), on 300μm×300μm devices with switching bandwidths of >50GHz. © 2005 IEEE

High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE

Self-aligned via and trench for metal contact in III-V semiconductor devices

A semiconductor processing method for the formation of self-aligned via and trench structures in III-V semiconductor devices (in particular, on InP platform) is presented, together with fabrication results. As a template for such self-aligned via and trench formations in a surrounding polymer layer on a semiconductor device, we make use of a sacrificial layer that consists of either a Si O2 dielectric hard mask layer deposited on the device layers or a sacrificial semiconductor layer grown on top of the device epitaxial layers (e.g., InP on an InGaAs etch stop), both laid down on the device layers before patterning the device geometry. During the semiconductor device etching, the sacrificial layer is kept as a part of the patterned structures and is, therefore, perfectly self-aligned. By selectively removing the sacrificial layer surrounded by the polymer that is etched back within the thickness of the sacrificial layer, an opening such as a via and a trench is formed perfectly self-aligned on the device top area in the place of the sacrificial layer. This process yields a pristine semiconductor surface for metal contacts and fully utilizes the contact area available on the device top, no matter how small the device area is. This approach thus provides as low an Ohmic contact resistance as possible upon filling the via and the trench with metal deposition. The additional use of a thin Si3 N4 protecting layer surrounding the device sidewalls improves the robustness of the process without any undesired impact on the device electrical passivation (or on the optical mode characteristics if the device also includes a waveguide). This method offers metal contacts scalable to the device size, being limited only by the feasible device size itself. This method is also applicable to the fabrication of other III-V based integrated devices. © 2006 American Vacuum Society

Electrically-reconfigurable integrated photonic switches

We report remotely electrically reconfigurable photonic switches that intimately integrate waveguide electroabsorption modulators with surface-normal photodiodes, avoiding conventional electronics. These switches exhibit full C-band wavelength conversion at 5 Gb/s and are remotely reconfigurable within tens of nanoseconds

High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE

Plasmon-pole approximation for semiconductor quantum wire electrons

We develop the plasmon-pole approximation for an interacting electron gas confined in a semiconductor quantum wire. We argue that the plasmon-pole approximation becomes a more accurate approach in quantum wire systems than in higher dimensional systems because of severe phase-space restrictions on particle-hole excitations in one dimension. As examples, we use the plasmon-pole approximation to calculate the electron self-energy due to the Coulomb interaction and the hot-electron energy relaxation rate due to LO-phonon emission in GaAs quantum wires. We find that the plasmon-pole approximation works extremely well as compared with more complete many-body calculations.Comment: 16 pages, RevTex, figures included. Also available at http://www-cmg.physics.umd.edu/~lzheng

Inelastic lifetimes of confined two-component electron systems in semiconductor quantum wire and quantum well structures

We calculate Coulomb scattering lifetimes of electrons in two-subband quantum wires and in double-layer quantum wells by obtaining the quasiparticle self-energy within the framework of the random-phase approximation for the dynamical dielectric function. We show that, in contrast to a single-subband quantum wire, the scattering rate in a two-subband quantum wire contains contributions from both particle-hole excitations and plasmon excitations. For double-layer quantum well structures, we examine individual contributions to the scattering rate from quasiparticle as well as acoustic and optical plasmon excitations at different electron densities and layer separations. We find that the acoustic plasmon contribution in the two-component electron system does not introduce any qualitatively new correction to the low energy inelastic lifetime, and, in particular, does not produce the linear energy dependence of carrier scattering rate as observed in the normal state of high-$T_c$ superconductors.Comment: 16 pages, RevTeX, 7 figures. Also available at http://www-cmg.physics.umd.edu/~lzheng