Exploring low-degree nodes first accelerates network exploration

We consider information diffusion on Web-like networks and how random walks can simulate it. A well-studied problem in this domain is Partial Cover Time, i.e., the calculation of the expected number of steps a random walker needs to visit a given fraction of the nodes of the network. We notice that some of the fastest solutions in fact require that nodes have perfect knowledge of the degree distribution of their neighbors, which in many practical cases is not obtainable, e.g., for privacy reasons. We thus introduce a version of the Cover problem that considers such limitations: Partial Cover Time with Budget. The budget is a limit on the number of neighbors that can be inspected for their degree; we have adapted optimal random walks strategies from the literature to operate under such budget. Our solution is called Min-degree (MD) and, essentially, it biases random walkers towards visiting peripheral areas of the network first. Extensive benchmarking on six real datasets proves that the---perhaps counter-intuitive strategy---MD strategy is in fact highly competitive wrt. state-of-the-art algorithms for cover

Atomistic Modelling of III-V Semiconductors: from a single tetrahedron to millions of atoms

Modelling of III-V semiconductor materials and nanostructures has been a very active field in the last 15 years. The rapid development in the material synthesis of low dimensional structures for optical applications has triggered a world wide interest for modelling methods capable of accurately describing systems comprising millions of atoms. With the development of empirical or semiempirical methods, together with the ever increasing computational power available to scientists, it is now possible to model e.g. quantum dots inside simulation boxes comprising 3 million atoms. In this talk we will review the most recent developments in the field of empirical atomistic methods, particularly the bond order potentials, and discuss its links and reliance on ab initio calculations. The links between these methods and modeling of segregation effect will also be discussed

Electron-paramagnetic-resonance identification of silver centers in silicon

©19xx American Physical Societ

Erratum: second-order piezoelectricity in wurtzite III-N semiconductors

We analyse whether hierarchical formation models based on Lambda cold dark matter cosmology can produce enough massive red galaxies to match observations. For this purpose, we compare with observations the predictions from two published models for the abundance and redshift distribution of Extremely Red Objects (EROs), which are red, massive galaxies observed at z >= 1. One of the models invokes a "superwind" to regulate star formation in massive haloes and the other suppresses cooling through "radio-mode" AGN feedback. The first one underestimates the number counts of EROs by an order of magnitude, whereas the radio-mode AGN feedback model gives excellent agreement with the number counts of EROs and redshift distribution of K-selected galaxies. This study highlights the need to consider AGN feedback in order to understand the formation and evolution of massive galaxies at z >= 1.Comment: 6 pages, 3 figures, "Highlights of Spanish Astrophysics V " Proceedings of the VIII Scientific Meeting of the Spanish Astronomical Society (SEA) held in Santander, July 7-11, 200

Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors

The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain