Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films

The ohmic conductivity of the sol-gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal alternate current (AC) and direct current (DC) methods. Its temperature dependence shows two activation energies of 0.26 and 0.12 eV depending on temperature range and excess Pb levels. The former is associated with Pb3+ acceptor centers, while the latter could be due to a different defect level yet to be identified.Comment: 13 pages, 3 figures, PostScript. Submitted to Applied Physics Letter

4th Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIV)

These conference proceedings contain the written papers of the contributions presented at the 4th International Conference on Theory, Modelling and Computational Methods for Semiconductor materials and nanostructures. The conference was held at the MediaCityUK, University of Salford, Manchester, UK on 22–24 January 2014. The previous conferences in this series took place in 2012 at the University of Leeds, in 2010 at St William's College, York and in 2008 at the University of Manchester, UK. The development of high-performance computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational, optical and electronic properties of semiconductors and their hetero- and nano-structures. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in semiconductor science and technology, where there is substantial potential for time-saving in R&D. Theoretical approaches represented in this meeting included: Density Functional Theory, Semi-empirical Electronic Structure Methods, Multi-scale Approaches, Modelling of PV devices, Electron Transport, and Graphene. Topics included, but were not limited to: Optical Properties of Quantum Nanostructures including Colloids and Nanotubes, Plasmonics, Magnetic Semiconductors, Photonic Structures, and Electronic Devices. This workshop ran for three days, with the objective of bringing together UK and international leading experts in the theoretical modelling of Group IV, III-V and II-VI semiconductors, as well as students, postdocs and early-career researchers. The first day focused on providing an introduction and overview of this vast field, aimed particularly at students, with several lectures given by recognized experts in various theoretical approaches. The following two days showcased some of the best theoretical research carried out in the UK in this field, with several contributions also from representatives of renowned theoretical groups from many European countries (Spain, France, Ireland, Germany, Switzerland, Luxemburg, Norway, Italy, Poland, Denmark, Sweden, Serbia, etc.), as well as Asia (Iran, Japan) and USA. We would like to thank all participants for making this a very successful meeting and for their contribution to the conference programme and these proceedings. We would also like to acknowledge the financial support from the Institute of Physics (Semiconductor Physics Group and Computational Physics Group), EPSRC-UK, the CECAM UK-Hartree Node, CCP9, and Quantum Wise (distributors of Atomistix)

Atomic-scale authentication with resonant tunneling diodes

The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions

Atomistic Modelling of III-V Semiconductors: from a single tetrahedron to millions of atoms

Modelling of III-V semiconductor materials and nanostructures has been a very active field in the last 15 years. The rapid development in the material synthesis of low dimensional structures for optical applications has triggered a world wide interest for modelling methods capable of accurately describing systems comprising millions of atoms. With the development of empirical or semiempirical methods, together with the ever increasing computational power available to scientists, it is now possible to model e.g. quantum dots inside simulation boxes comprising 3 million atoms. In this talk we will review the most recent developments in the field of empirical atomistic methods, particularly the bond order potentials, and discuss its links and reliance on ab initio calculations. The links between these methods and modeling of segregation effect will also be discussed

Continuous pulse advances in the negative ion source NIO1

Consorzio RFX and INFN-LNL have designed, built and operated the compact radiofrequency negative ion source NIO1 (Negative Ion Optimization phase 1) with the aim of studying the production and acceleration of H- ions. In particular, NIO1 was designed to keep plasma generation and beam extraction continuously active for several hours. Since 2020 the production of negative ions at the plasma grid (the first grid of the acceleration system) has been enhanced by a Cs layer, deposited though active Cs evaporation in the source volume. For the negative ion sources applied to fusion neutral beam injectors, it is essential to keep the beam current and the fraction of co-extracted electrons stable for at least 1 h, against the consequences of Cs sputtering and redistribution operated by the plasma. The paper presents the latest results of the NIO1 source, in terms of caesiation process and beam performances during continuous (6{\div}7 h) plasma pulses. Due to the small dimensions of the NIO1 source (20 x (diam.)10 cm), the Cs density in the volume is high (10^15 \div 10^16 m^-3) and dominated by plasma-wall interaction. The maximum beam current density and minimum fraction of co-extracted electrons were respectively about 30 A/m^2 and 2. Similarly to what done in other negative ion sources, the plasma grid temperature in NIO1 was raised for the first time, up to 80 {\deg}C, although this led to a minimal improvement of the beam current and to an increase of the co-extracted electron current.Comment: 11 pages, 7 figures. Contributed paper for the 8th International symposium on Negative Ions, Beams and Sources - NIBS'22. Revision 1 of the preprint under evaluation at Journal of Instrumentation (JINST

Atomic-scale authentication using resonant tunnelling diodes

The rapid development of technology has provided a wealth of resources enabling the trust of everyday interactions to be undermined. Authentication schemes aim to address this challenge by providing proof of identity. This can be achieved by using devices that, when challenged, give unique but reproducible responses. At present, these distinct signatures are commonly generated by physically unclonable functions, or PUFs. These devices provide a straightforward measurement of a physical characteristic of their structure that has inherent randomness, due to imperfections in the manufacturing process. These hard-to-predict physical responses can generate a unique identity that can be used for authentication without relying on the secrecy of stored data. However, the classical design of these devices limits both their size and security. Here we show that the extensively studied problematic fluctuations in the current-voltage measurements of resonant tunnelling diodes (RTDs) provide an uncomplicated, robust measurement that can function as a PUF without conventional resource limitations. This is possible due to quantum tunnelling within the RTD, and on account of these room temperature quantum effects, we term such devices QUFs - quantum unclonable functions. As a result of the current-voltage spectra being dependent on the atomic structure and composition of the nanostructure within the RTD, each device provides a high degree of uniqueness, whilst being impossible to clone or simulate, even with state-of-the-art technology. We have thus created PUF-like devices requiring the fewest resources which make use of quantum phenomena in a highly manufacturable electronic device operating at room temperature. Conventional spectral analysis techniques, when applied to our QUFs, will enable reliable generation of unpredictable unique identities which can be employed in advanced authentication systems