Fundamental Characteristics of a Cylindrical Linear Pulse Motor for the Artificial Heart

A new actuator using a cylindrical linear pulse motor for the artificial heart is proposed with descriptions of the principle of operation, theoretical expression of thrust, and experimental results. The actuator has a simple configuration and its size is much smaller than the ordinary external backup facility using a pneumatic power. The actuator consists chiefly of a linear pulse motor and two rooms of sacs for the right and left ventricles. Some problems have been found to be solved before the actuator can be applied to the actual artificial heart.Article信州大学工学部紀要 56: 59-72 (1984)departmental bulletin pape

Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices

Because spin-orbit coupling in wurtzite semiconductors is relatively weak compared with that in zincblende ones, the III-nitride semiconductor GaN is a promising material for high-performance optical semiconductor spintronic devices such as spin lasers. For the purpose of reducing the operating power of spin lasers, it is necessary to demonstrate highly efficient electrical spin injection from a ferromagnetic material into GaN with a low-resistance contact. Here, an epitaxial half-metallic Heusler alloy Co2FeAlxSi1−x(CFAS)/GaN heterostructure is developed by inserting an ultrathin Co layer between the CFAS and GaN. The CFAS/n+-GaN heterojunctions clearly show tunnel conduction with very small rectification and a low resistance-area product of ≈3.8 kΩµm2, which is several orders of magnitude smaller than those reported in previous work, at room temperature. Nonlocal spin signals and a Hanle effect curve are observed at low temperatures using lateral spin-valve devices with the CFAS/n+-GaN contacts, suggesting pure spin current transport in bulk GaN. The spin transport is observed at temperatures as high as room temperature, with a high spin polarization of 0.2 at a low bias voltage less than 2.0 V. This study is expected to open a path to GaN-based spintronic devices with highly spin-polarized and low-resistance contacts.Yamada S., Kato M., Ichikawa S., et al. Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices. Advanced Electronic Materials 9, 2300045 (2023); https://doi.org/10.1002/aelm.202300045

Novel urinary glycan profiling by lectin array serves as the biomarkers for predicting renal prognosis in patients with IgA nephropathy

In IgA nephropathy (IgAN), IgA1 molecules are characterized by galactose deficiency in O-glycans. Here, we investigated the association between urinary glycosylation profile measured by 45 lectins at baseline and renal prognosis in 142 patients with IgAN. The primary outcome was estimated glomerular filtration rate (eGFR) decline (>4 mL/min/1.73 m(2)/year), or eGFR >= 30% decline from baseline, or initiation of renal replacement therapies within 3 years. During follow-up (3.4 years, median), 26 patients reached the renal outcome (Group P), while 116 patients were with good renal outcome (Group G). Multivariate logistic regression analyses revealed that lectin binding signals of Erythrina cristagalli lectin (ECA) (odds ratio [OR] 2.84, 95% confidence interval [CI] 1.11-7.28) and Narcissus pseudonarcissus lectin (NPA) (OR 2.32, 95% CI 1.11-4.85) adjusted by age, sex, eGFR, and urinary protein were significantly associated with the outcome, and they recognize Gal(beta 1-4)GlcNAc and high-mannose including Man(alpha 1-6)Man, respectively. The addition of two lectin-binding glycan signals to the interstitial fibrosis/tubular atrophy score further improved the model fitness (Akaike's information criterion) and incremental predictive abilities (c-index, net reclassification improvement, and integrated discrimination improvement). Urinary N-glycan profiling by lectin array is useful in the prediction of IgAN prognosis, since ECA and NPA recognize the intermediate glycans during N-glycosylation of various glycoproteins

Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm 2 , which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts

Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

We explore epitaxial growth of Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si, where the Co2MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si