Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene

More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-developed plateaus of conductance have been revealed to date. In this work we report on a novel implementation of the cryo-etching method, which enabled us to fabricate graphene nanoconstrictions encapsulated between hexagonal boron nitride thin films with unprecedented control of the structure edges. High quality smooth nanometer-rough edges are characterized by atomic force microscopy and a clear correlation between low roughness and the existence of well-developed quantized conductance steps with the concomitant occurrence of ballistic transport is found at low temperature. In par\-ti\-cu\-lar, we come upon exact 2$e^{2}/h$ quantization steps of conductance at zero magnetic field due to size quantization, as it has been theoretically predicted for truly ballistic electron transport through graphene nanoconstrictions

Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

[EN] Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz illumination. The response of the MODFET has been characterized using a two-tones solid-state continuous wave source at 0.15 and 0.30 THz. The DC drain-to-source voltage of 500-nm gate length transistors transducing the sub-THz radiation (photovoltaic mode) exhibited a non-resonant response in agreement with literature results. Two configurations of the illumination were investigated: (i) front side illumination in which the transistor was shined on its top side, and (ii) back illumination side where the device received the sub-THz radiation on its bottom side, i.e., on the Si substrate. Under excitation at 0.15 THz clear evidence of the coupling of terahertz radiation by the bonding wires was found, this coupling leads to a stronger response under front illumination than under back illumination. When the radiation is shifted to 0.3 THz, as a result of a lesser efficient coupling of the EM radiation through the bonding wires, the response under front illumination was considerably weakened while it was strengthened under back illumination. Electromagnetic simulations explained this behavior as the magnitude of the induced electric field in the channel of the MODFET was considerably stronger under back illumination.This research was funded by the Ministerio de Ciencia, Investigacion y Universidades of Spain andFEDER (ERDF: European Regional Development Fund) under the Research Grants numbers RTI2018-097180-B-100 and TEC2016-78028-C3-3-P and FEDER/Junta de Castilla y Leon Research Grant number SA256P18. Also by Conselleria d'Educacio, lnvestigacio, Cultura i Esport, Generalitat Valenciana (Spain) through the grant AIC0/2019/018. The APC received no external funding.Delgado-Notario, JA.; Calvo-Gallego, J.; Velázquez-Pérez, JE.; Ferrando Bataller, M.; Fobelets, K.; Meziani, YM. (2020). Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs. Applied Sciences. 10(17):1-9. https://doi.org/10.3390/app10175959S191017Lewis, R. A. (2019). A review of terahertz detectors. Journal of Physics D: Applied Physics, 52(43), 433001. doi:10.1088/1361-6463/ab31d5Dragoman, D., & Dragoman, M. (2004). Terahertz fields and applications. Progress in Quantum Electronics, 28(1), 1-66. doi:10.1016/s0079-6727(03)00058-2Mittleman, D. M. (2017). Perspective: Terahertz science and technology. Journal of Applied Physics, 122(23), 230901. doi:10.1063/1.5007683Pawar, A. Y., Sonawane, D. D., Erande, K. B., & Derle, D. V. (2013). Terahertz technology and its applications. Drug Invention Today, 5(2), 157-163. doi:10.1016/j.dit.2013.03.009Federici, J., & Moeller, L. (2010). Review of terahertz and subterahertz wireless communications. Journal of Applied Physics, 107(11), 111101. doi:10.1063/1.3386413Federici, J. F., Schulkin, B., Huang, F., Gary, D., Barat, R., Oliveira, F., & Zimdars, D. (2005). THz imaging and sensing for security applications—explosives, weapons and drugs. Semiconductor Science and Technology, 20(7), S266-S280. doi:10.1088/0268-1242/20/7/018Dyakonov, M., & Shur, M. (1993). Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. Physical Review Letters, 71(15), 2465-2468. doi:10.1103/physrevlett.71.2465Dyakonov, M., & Shur, M. (1996). Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid. IEEE Transactions on Electron Devices, 43(3), 380-387. doi:10.1109/16.485650Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., … Shur, M. S. (2006). Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power. Applied Physics Letters, 89(25), 253511. doi:10.1063/1.2410215Rumyantsev, S. L., Fobelets, K., Veksler, D., Hackbarth, T., & Shur, M. S. (2008). Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation. Semiconductor Science and Technology, 23(10), 105001. doi:10.1088/0268-1242/23/10/105001Javadi, E., Delgado-Notario, J. A., Masoumi, N., Shahabadi, M., Velázquez-Pérez, J. E., & Meziani, Y. M. (2018). Continuous Wave Terahertz Sensing Using GaN HEMTs. physica status solidi (a), 215(11), 1700607. doi:10.1002/pssa.201700607Delgado-Notario, J. A., Clericò, V., Diez, E., Velázquez-Pérez, J. E., Taniguchi, T., Watanabe, K., … Meziani, Y. M. (2020). Asymmetric dual-grating gates graphene FET for detection of terahertz radiations. APL Photonics, 5(6), 066102. doi:10.1063/5.0007249Lewis, R. A. (2014). A review of terahertz sources. Journal of Physics D: Applied Physics, 47(37), 374001. doi:10.1088/0022-3727/47/37/374001Delgado-Notario, J., Velazquez-Perez, J., Meziani, Y., & Fobelets, K. (2018). Sub-THz Imaging Using Non-Resonant HEMT Detectors. Sensors, 18(2), 543. doi:10.3390/s18020543Gaspari, V., Fobelets, K., Velazquez-Perez, J. E., Ferguson, R., Michelakis, K., Despotopoulos, S., & Papavassilliou, C. (2004). Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET. Applied Surface Science, 224(1-4), 390-393. doi:10.1016/j.apsusc.2003.08.066Fobelets, K., Jeamsaksiri, W., Papavasilliou, C., Vilches, T., Gaspari, V., Velazquez-Perez, J. E., … König, U. (2004). Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies. Solid-State Electronics, 48(8), 1401-1406. doi:10.1016/j.sse.2004.01.017Delgado Notario, J. A., Javadi, E., Calvo-Gallego, J., Diez, E., Velázquez, J. E., Meziani, Y. M., & Fobelets, K. (2016). Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation. International Journal of High Speed Electronics and Systems, 25(03n04), 1640020. doi:10.1142/s0129156416400206Sakowicz, M., Łusakowski, J., Karpierz, K., Grynberg, M., Gwarek, W., Boubanga, S., … Studart, N. (2010). A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation. doi:10.1063/1.3295528Knap, W., Teppe, F., Meziani, Y., Dyakonova, N., Lusakowski, J., Boeuf, F., … Shur, M. S. (2004). Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors. Applied Physics Letters, 85(4), 675-677. doi:10.1063/1.177503

Excitons, trions and Rydberg states in monolayer MoS2 revealed by low temperature photocurrent spectroscopy

We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutral excitons ($\textrm{X}_{\textrm{1s}}^\textrm{A}$ and $\textrm{X}_{\textrm{1s}}^\textrm{B}$) and charged trions ($\textrm{T}^\textrm{A}$ and $\textrm{T}^\textrm{B}$) as well as up to eight additional spectral lines at energies above the $\textrm{X}_{\textrm{1s}}^\textrm{B}$ transition, which we attribute to the Rydberg series of excited states of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. The relative intensities of the different spectral features can be tuned by the applied gate and drain-source voltages, with trions and Rydberg excited states becoming more prominent at large gate voltages. Using an effective-mass theory for excitons in two-dimensional transition-metal dichalcogenides we are able to accurately fit the measured spectral lines and unambiguously associate them with their corresponding Rydberg states. The fit also allows us to determine the quasiparticle bandgap and spin-orbit splitting of monolayer $\textrm{MoS}_2$, as well as the exciton binding energies of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$

Fast response photogating in monolayer MoS_2 phototransistors

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been the object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: the photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS_2 phototransistors, PGE is generally attributed to charge trapping by polar molecules adsorbed to the semiconductor channel, giving rise to a very slow photoresponse. Thus, the photoresponse of 1L-MoS_2 phototransistors at high-frequency light modulation is assigned to PCE alone. Here we investigate the photoresponse of a fully h-BN encapsulated monolayer (1L) MoS_2 phototransistor. In contrast with previous understanding, we identify a rapidly-responding PGE mechanism that becomes the dominant contribution to photoresponse under high-frequency light modulation. Using a Hornbeck-Haynes model for the photocarrier dynamics, we fit the illumination power dependence of this PGE and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies

Effect of angiotensin-converting enzyme inhibitor and angiotensin receptor blocker initiation on organ support-free days in patients hospitalized with COVID-19

IMPORTANCE Overactivation of the renin-angiotensin system (RAS) may contribute to poor clinical outcomes in patients with COVID-19. Objective To determine whether angiotensin-converting enzyme (ACE) inhibitor or angiotensin receptor blocker (ARB) initiation improves outcomes in patients hospitalized for COVID-19. DESIGN, SETTING, AND PARTICIPANTS In an ongoing, adaptive platform randomized clinical trial, 721 critically ill and 58 non–critically ill hospitalized adults were randomized to receive an RAS inhibitor or control between March 16, 2021, and February 25, 2022, at 69 sites in 7 countries (final follow-up on June 1, 2022). INTERVENTIONS Patients were randomized to receive open-label initiation of an ACE inhibitor (n = 257), ARB (n = 248), ARB in combination with DMX-200 (a chemokine receptor-2 inhibitor; n = 10), or no RAS inhibitor (control; n = 264) for up to 10 days. MAIN OUTCOMES AND MEASURES The primary outcome was organ support–free days, a composite of hospital survival and days alive without cardiovascular or respiratory organ support through 21 days. The primary analysis was a bayesian cumulative logistic model. Odds ratios (ORs) greater than 1 represent improved outcomes. RESULTS On February 25, 2022, enrollment was discontinued due to safety concerns. Among 679 critically ill patients with available primary outcome data, the median age was 56 years and 239 participants (35.2%) were women. Median (IQR) organ support–free days among critically ill patients was 10 (–1 to 16) in the ACE inhibitor group (n = 231), 8 (–1 to 17) in the ARB group (n = 217), and 12 (0 to 17) in the control group (n = 231) (median adjusted odds ratios of 0.77 [95% bayesian credible interval, 0.58-1.06] for improvement for ACE inhibitor and 0.76 [95% credible interval, 0.56-1.05] for ARB compared with control). The posterior probabilities that ACE inhibitors and ARBs worsened organ support–free days compared with control were 94.9% and 95.4%, respectively. Hospital survival occurred in 166 of 231 critically ill participants (71.9%) in the ACE inhibitor group, 152 of 217 (70.0%) in the ARB group, and 182 of 231 (78.8%) in the control group (posterior probabilities that ACE inhibitor and ARB worsened hospital survival compared with control were 95.3% and 98.1%, respectively). CONCLUSIONS AND RELEVANCE In this trial, among critically ill adults with COVID-19, initiation of an ACE inhibitor or ARB did not improve, and likely worsened, clinical outcomes. TRIAL REGISTRATION ClinicalTrials.gov Identifier: NCT0273570

Terahertz Emission of Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Photomixer

64th Device Research Conference, The Pennsylvania State University, University Park, Pennsylvania, June 26-28, 200

Improvement of an InfraRed Pyroelectric Detector Performances in THz Range Using the Terajet Effect

An infrared (IR) pyroelectric detector was investigated for terahertz (THz) detection using the principle of the terajet effect, which focuses the beam beyond the diffraction limit. The terahertz beam was coupled to the detector’s optical window through a two-wavelength-dimension dielectric cubic particle-lens based on the terajet effect. We experimentally demonstrate an enhancement of about 6 dB in the sensitivity under excitation of 0.2 THz without degradation of the noise equivalent power value. The results show that the proposed method could be applied to increase the sensitivity of various commercial IR sensors for THz applications that do not require modification of the internal structure, and it may apply also to acoustics and plasmonic detectors

Sub-THz Imaging Using Non-Resonant HEMT Detectors

Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si Schottky-gated MODFETs (Modulation-doped Field-Effect Transistor) was performed. The response of the strained-Si MODFET has been characterized at two frequencies: 150 and 300 GHz: The DC drain-to-source voltage transducing the THz radiation (photovoltaic mode) of 250-nm gate length transistors exhibited a non-resonant response that agrees with theoretical models and physics-based simulations of the electrical response of the transistor. When imposing a weak source-to-drain current of 5 μA, a substantial increase of the photoresponse was found. This increase is translated into an enhancement of the responsivity by one order of magnitude as compared to the photovoltaic mode, while the NEP (Noise Equivalent Power) is reduced in the subthreshold region. Strained-Si MODFETs demonstrated an excellent performance as detectors in THz imaging

Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs

[EN] This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz. The device response in the photovoltaic mode was non-resonant, in agreement with the Dyakonov and Shur model for plasma waves detectors. The maximum of the photoresponse was clearly higher under THz illumination at 0.15 THz than at 0.3 THz. A numerical study was conducted using three-dimensional (3D) electromagnetic simulations to delve into the coupling of THz radiation to the channel of the transistor. 3D simulations solving the Maxwell equations using a time-domain solver were performed. Simulations considering the full transistor structure, but without taking into account the bonding wires used to contact the transistor pads in experiments, showed an irrelevant role of the gate length in the coupling of the radiation to the device channel. Simulations, in contradiction with measurements, pointed to a better response at 0.3 THz than under 0.15 THz excitation in terms of the normalized electric field inside the channel. When including four 0.25 mm long bonding wires connected to the contact pads on the transistor, the normalized internal electric field induced along the transistor channel by the 0.15 THz beam was increased in 25 dB, revealing, therefore, the important role played by the bonding wires at this frequency. As a result, the more intense response of the transistor at 0.15 THz than at 0.3 THz experimentally found, must be attributed to the bonding wires.This research was funded by the Ministerio de Ciencia, Investigacion y Universidades of Spain (Spanish Ministry of Science, Innovation, and Universities) and FEDER (ERDF: European Regional Development Fund) under the Research Grants numbers RTI2018-097180-B-100, PID2019-107885GB-C3-2 and TEC2016-78028-C3-3-P and FEDER/Junta de Castilla y Leon Research Grant numbers SA256P18 and SA121P20. Also by Conselleria d'Educacio, lnvestigacio, Cultura i Esport, Generalitat Valenciana (Spain) through the grant AIC0/2019/018. The APC was funded by Universidad de Salamanca.Calvo-Gallego, J.; Delgado-Notario, JA.; Velázquez-Pérez, JE.; Ferrando Bataller, M.; Fobelets, K.; El Moussaouy, A.; Meziani, YM. (2021). Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs. Sensors. 21(3):1-11. https://doi.org/10.3390/s21030688S11121