Basis for equivalent fluence concept in space solar cells

The equivalent fluence concept is defined, and its use and potential problems are noted. Silicon and GaAs solar cells are compared in a radiation environment. The analysis indicates that valid equivalent fluence values may be easier to obtain in GaAs than in silicon

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation

Silicon research and technology

The development of solar cells suitable for space applications are discussed, along with the advantages and disadvantages of silicon and gallium arsenide solar cells. The goal of a silicon solar cell with 18% efficiency has not been reached and does not appear promising in the near future

On the Laser Stimulation of Low-Energy Nuclear Reactions in Deuterated Palladium

Models to account for the observed experimental results for low-energy nuclear reactions in palladium-deuteride systems are presented along with calculated results. The crucial idea is a mechanism of improved probability for the needed penetration of the Coulomb barrier for a D-D reaction. This facilitation occurs, in general, with the formation of D^- ions at special frequency modes (e.g. via phonons) and, specifically for the laser-stimulated case, with utilization of enhanced optical potential at a selected interface. Both mechanisms may work individually, or together, to increase the probability of barrier penetration.Comment: 9 pages, 3 figures, Rev. 1, Significantly enhanced version (resulting from reviewer's comments), Rev. 2, embedded font and smaller file size. Keywords: CMNS, D--D+, LENR, optical-potential, resonance-enhancemen

Limiting process in shallow junction solar cells

In extending the violet and nonreflective cell technology to lower resistivities, several processes limiting output power were encountered. The most important was the dark diffusion current due to recombination at the front grid contacts. After removal of this problem by reduction of the silicon metal contact area (to 0.14 percent of the total area), the electric field enhanced junction recombination current J sub r was the main limitation. Alteration of the diffusion profile to reduce the junction field is shown to be an effective means of influencing J sub r. The remaining problems are the bulk recombination in the n+ layer and the surface recombination at the oxide-silicon interface; both of these problems are aggravated by band-narrowing resulting from heavy doping in the diffused layer. Experimental evidence for the main limitations is shown, where increased diffusion temperature is seen to reduce both the influence of the front grid contacts and the junction electric field by increasing the junction depth. The potential for further significant improvement in efficiency appears to be high

Decay of 4 He*^ from PdD and transmutation

Abstract only.Title on abstract: Decay of 4He*^ from PdD and transmutationPresent Lochon and Extended-Lochon Models for the low-energy nuclear reaction, LENR, fusion process predict the fusion of monatomic deuterium into a sub-fragmentation level excited condition of 4He*^. The ^ and * indicate the presence of deep-Dirac level (DDL) electrons and of an excited nuclear state respectively. The higher angular-momentum deuterium combinations result in the formation of femto-deuterium molecules or molecular ions, D2^ or D2+^. Both the 4He*^ and femto-deuterium molecules are expected to be short lived (<1fs). However, the short life may be determined more by their fusion with other nuclei than with their decay time to 4He

Pictorial description for LENR in linear defects of a lattice

The concept of phonons in solid-state physics is based on oscillations of atoms about equilibrium positions within a lattice. These equilibrium positions are usually a fixed distance apart within the lattice and the oscillations are generally a small fraction of that spacing. Under these conditions, the atoms never get closer to one another than l - 2a, where l is the lattice spacing and 'a' is the maximum amplitude of the atomic oscillation. A model for LENR within crevices of a lattice provides a different scenario. This presentation represents the concepts of, the requirements for, and the implications of, the new picture. The new concept is that the lattice does not tightly bind the sub-lattice within the linear defect. Under certain conditions, the sub-lattice spacing can become independent of the lattice spacing and sections of the sub-lattice will act like an 'accordion' or a 'Slinky'. The group oscillations, represented by different phonon modes, allow l to change

Deep-orbit-electron radiation absorption and emission

Abstract only.Title on abstract: Deep-orbit-electron radiation absorption and emissionThe deep-Dirac level (DDL) electron orbits have been proposed, and rejected, for over 50 years. The rejections have been based on mathematical considerations resulting from the singular Coulomb potential used in the Dirac equations and on lack of observation of such levels. Nevertheless, these orbits explain many things experimentally observed in CF and may be a unique explanation for the low-radiation or nearly radiation-free transmutation measured in both PdD and NiH CF systems, It is important to develop the characteristics of these very deep-orbit, relativistic, electrons and their formation of femto-atoms and molecules in more detail

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study